MT53E1G32D2FW-046 vs MT53E512M32D2FW-046 AAT:D Comparación
Comparación detallada lado a lado de MT53E1G32D2FW-046 por Micron Technology y MT53E512M32D2FW-046 AAT:D por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT53E1G32D2FW-046 - 32Gbit LPDDR4X SDRAM 200-TFBGA | Micron
MT53E1G32D2FW-046 ✓ ActivoMicron Technology
MT53E512M32D2FW-046 - 16Gb LPDDR4 SDRAM 2133MHz | Micron
MT53E512M32D2FW-046 AAT:D ✓ ActivoComparación de especificaciones
| Parámetro | MT53E1G32D2FW-046 | MT53E512M32D2FW-046 AAT:D |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $295,93 | $13,75 |
| Tipo de memoria | Mobile LPDDR4X SDRAM | SDRAM - Mobile LPDDR4/LPDDR4X |
| Tamaño de memoria | 32 Gbit (4 GB) | 16 Gbit |
| Organización de memoria | 1G x 32 (dual-die, 2 x 16-bit channels) | 512M x 32 |
| Interfaz | Parallel | Parallel |
| Clock Frequency | 2133 MHz (2.133 GHz) | 2133 MHz (2.133 GHz) |
| Velocidad de datos | 4266 Mb/s per pin | — |
| Access Time | 3.5 ns | — |
| Write Cycle Time | 18 ns | — |
| VDDQ I/O Voltage | 0.6 V | — |
| Encapsulado | 200-TFBGA (10 x 14.5 mm) | 200-TFBGA (10 mm x 14.5 mm) |
| Ball Diameter | 0.40 mm (SMD balls) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Operating Temperature (AUT variant) | -40C to +125C | — |
| Die Revisions | :A (FBGA D9ZQX) and :B (FBGA D8CJB) | — |
| Características | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Rating | [DATA_NEEDED: moisture sensitivity level] | — |
| Cycle Time | — | 3.5 ns |
| Supply Voltage VDD | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4) | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4X) | — | 0.6 V |
| Core Voltage VDD2 | — | 1.8 V |
| Temperatura de funcionamiento | — | -40C to +105C (AAT:D grade) |
| Automotive Qualification | — | AEC-Q100 (AUT:D variant verified; AAT:D automotive grade per Micron catalog) |
| Memory Configuration Speed Grade | — | -046 (2133) |
| Nivel MSL | — | [DATA_NEEDED: moisture sensitivity level] |