MT53E256M16D1FW-046 vs H5CG46AGBDX017 对比
详细并排对比 MT53E256M16D1FW-046 出自 Micron Technology 和 H5CG46AGBDX017 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E256M16D1FW-046 - 4Gb LPDDR4X SDRAM 2133MHz | Micron
MT53E256M16D1FW-046 ✓ 量产中
规格对比
| 参数 | MT53E256M16D1FW-046 | H5CG46AGBDX017 |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.20 | $92.10 |
| 存储器类型 | SDRAM - Mobile LPDDR4X | DDR5 SDRAM |
| Density | 4 Gbit | 16 Gb |
| 存储组织 | 256M x 16 | 1G x 16 |
| 数据速率 | 2133 Mbps/pin (2.133 GHz) | 5600 Mbps/pin |
| Clock Cycle Time | 3.5 ns | — |
| Core Supply Voltage (VDD) | 1.1 V | — |
| I/O Supply Voltage (VDDQ) | 0.6 V (LPDDR4X) | — |
| 接口 | Parallel | DDR5 (Double Data Rate 5) |
| 封装 | 200-TFBGA (10 x 14.5 mm) | FBGA (surface mount) |
| 安装类型 | Surface Mount (BGA soldered) | Surface Mount |
| Technology | LPDDR4X LPDRAM | — |
| Speed Grade | -046 (2133 MHz class) | — |
| Temperature Grade (WT suffix) | [DATA_NEEDED: operating temperature range for WT grade] | — |
| Ball Count | 200 | [DATA_NEEDED: package ball count] |
| Package Dimensions | 10 mm x 14.5 mm | — |
| Low Power Modes | Self-refresh, deep power-down, DPD | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status from datasheet] | Compliant (per JLCPCB listing) |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD nominal, expected 1.1 V per DDR5 JEDEC class] |
| On-Die ECC | — | [DATA_NEEDED: on-die ECC support confirmation] |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| Refresh | — | [DATA_NEEDED: refresh scheme] |
| Generation | — | DDR5 |
| Manufacturer Part Status | — | In stock at multiple distributors |
| Typical Applications | — | Data storage, firmware boot, embedded logging, industrial controllers, computing modules |