MX30UF4G28AB vs MX30UF4G26AB 对比

详细并排对比 MX30UF4G28AB 出自 Macronix 和 MX30UF4G26AB 出自 Macronix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Macronix
MX30UF4G28AB MX30UF4G28AB - 4Gbit SLC Parallel NAND Flash | Macronix

MX30UF4G28AB - 4Gbit SLC Parallel NAND Flash | Macronix

MX30UF4G28AB ✓ 量产中
Macronix
MX30UF4G26AB MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB ✓ 量产中

规格对比

参数 MX30UF4G28AB MX30UF4G26AB
品牌 Macronix Macronix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.30 $4.25
存储器类型 FLASH - NAND (SLC) FLASH - NAND (SLC)
存储容量 4 Gbit —
Memory Organization 512M x 8 256M x 16
接口 Parallel (asynchronous) Parallel (Asynchronous NAND)
Bus Width x8 / x16 selectable —
Access Time (tRC) 25 ns (typical) —
Supply Voltage (VCC) 1.7 V to 1.95 V (1.8 V typ) —
Technology SLC (Single-Level Cell) NAND —
Page Size 2048 bytes + 64 bytes spare (x8) [DATA_NEEDED: page size in bytes]
Block Size [DATA_NEEDED: block size in pages] [DATA_NEEDED: block size in pages]
封装 48-pin TSOP-I (TI) / 63-ball VFBGA (XKI) 63-VFBGA (9 x 11 mm)
工作温度 -40 °C to +85 °C (industrial) -40 C to +85 C
安装类型 Surface Mount Surface Mount
Program/Erase Cycles [DATA_NEEDED: endurance per block] —
Data Retention [DATA_NEEDED: retention years] [DATA_NEEDED: data retention years]
RoHS 状态 Compliant Compliant
MSL 等级 3 (per JEDEC J-STD-020, typical for TSOP) 3
Memory Density — 4 Gbit (512 MB)
Supply Voltage (Vcc) — 1.7 V to 1.95 V
Access Time — 25 ns
Compliance Standard — ONFI 1.0
Cell Technology — Single-Level Cell (SLC)
Endurance (P/E Cycles) — [DATA_NEEDED: typical endurance per block]

数据手册与资源

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