N25Q512A83G12A0F vs N25Q512A13GSFA0F 对比
详细并排对比 N25Q512A83G12A0F 出自 Micron Technology 和 N25Q512A13GSFA0F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | N25Q512A83G12A0F | N25Q512A13GSFA0F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.20 | $5.35 |
| 存储器类型 | Flash - NOR Memory IC | SPI NOR Flash (Multiple I/O) |
| Memory Capacity | 512 Mbit (64 MB) | — |
| 存储组织 | 128M x 4 | 512M/256M/128M x 1Bit/2Bit/4Bit |
| 接口 | SPI - Multiple I/O (Standard/Dual/Quad) | SPI-compatible serial bus |
| Clock Frequency | 108 MHz | — |
| 电源电压 | 2.7 V to 3.6 V (3V class) | 2.7 V to 3.6 V |
| Cell Type | SLC | — |
| Sector Erase Size | 4 KB | 4 KB |
| 封装 | 24-T-PBGA (6x8 mm) | 16-Pin SOIC (SOP-II 16/16) |
| Package Structure | Dual-Die Package (DDP) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Program/Erase Protection | Software and hardware write protection | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | unknown |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 512 Mbit (64 MByte) |
| Max Clock Frequency (STR) | — | 108 MHz |
| Max Clock Frequency (DTR) | — | 54 MHz |
| Access Time | — | 7 ns |
| Construction | — | Stacked device (two 256Mb die) |
| Protocols | — | Standard, Dual Output, Dual I/O, Quad Output, Quad I/O, DTR |
| Packaging | — | Tape & Reel (T/R) |
| Temperature Grade | — | Automotive |