NT5CC256M16CP-DI vs H5TC4G63AFR-PBA 对比
详细并排对比 NT5CC256M16CP-DI 出自 Nanya Technology 和 H5TC4G63AFR-PBA 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5CC256M16CP-DI | H5TC4G63AFR-PBA |
|---|---|---|
| 品牌 | Nanya Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.90 | $3.98 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储组织 | 256M x 16 | 256M x 16 |
| Total Density | 4Gb | — |
| 电源电压 | 1.35V (1.283V to 1.45V) | — |
| Speed Grade | DDR3-1600 (CL11) | — |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 | 11, 12, 13 |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Internal Banks | 8 | — |
| 封装 | VFBGA-96 | 96-ball FBGA |
| 工作温度 | 0C to +95C (Tc) [DATA_NEEDED: exact range] | — |
| 接口 | Differential clock (CK, CK#) | 16-bit I/O |
| Burst Length | 8, 4 | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (programmable) | — |
| RoHS | Compliant | Compliant |
| Process Technology | 70nm | — |
| Density | — | 4Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| 数据速率 | — | 1866 Mbps (PC3L-14900) |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| 工作温度范围 | — | 0°C to +95°C (Tcase) |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |