NT5CC256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
料号： NT5CC256M16CP-DI ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.5 | $4.50 |
| 10 | $4.1 | $41.00 |
| 100 | $3.7 | $370.00 |
| 500 | $3.3 | $1,650.00 |
| 1,000 | $2.9 | $2,900.00 |
NT5CC256M16CP-DI 概述
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses prefetch buffers and on-die termination to achieve high data rates. DDR3L is commonly used in computing, networking, and embedded systems where power efficiency is critical.
Key features include 8 internal memory banks, differential clock inputs (CK, CK#), programmable CAS latency (CL) of 5-11, and write latency (CWL) of 5-9. The device supports on-die termination (ODT) and DLL-off mode for low-power operation. It also features programmable additive latency (posted CAS) and a 0.075V reference voltage tolerance.
The NT5CC256M16CP-DI uses a 70nm process technology, offering a balance of performance and power efficiency. The VFBGA-96 package provides a compact footprint with excellent thermal and electrical characteristics. The device supports burst lengths of 8 and 4, and includes auto-refresh and self-refresh modes for power management.
Typical applications include DDR3L memory modules for laptops, servers, networking equipment, and industrial computing. It is also used in automotive infotainment and ADAS systems where reliability and temperature range are critical. The 1.35V operation makes it ideal for battery-powered devices.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a 0.75V reference voltage for correct operation.
直接替换替代料： NT5CC256M16CP-DI ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： NT5CC256M16CP-DI （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Supply Voltage, Burst Length, CAS Latency (CL).
快速对比工具——选择替代料号进行并排对比：
NT5CC256M16DP-DI
✅ 直接替换✓ 有现货
$6.5 / 个
查看数据手册 →MT41K256M16HA-125
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.3636 / 个
查看数据手册 →K4B4G1646E-BYMA
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$14.3182 / 个
查看数据手册 →H5TC4G63AFR-PBA
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$3.9773 / 个
查看数据手册 →IS43TR16512B-125KBLI
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
NT5CC256M16CP-DI 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| 存储组织 | 256M x 16 |
| Total Density | 4Gb |
| 电源电压 | 1.35V (1.283V to 1.45V) |
| Speed Grade | DDR3-1600 (CL11) |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | 5, 6, 7, 8, 9 |
| Internal Banks | 8 |
| 封装 | VFBGA-96 |
| 接口 | Differential clock (CK, CK#) |
| Burst Length | 8, 4 |
| On-Die Termination | Yes (programmable) |
| RoHS | Compliant |
| Process Technology | 70nm |
NT5CC256M16CP-DI 引脚配置
| 引脚 A1 | VDD — Power supply 1.35V |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ2 — Data input/output 2 |
| 引脚 B3 | DQ3 — Data input/output 3 |
| 引脚 C1 | CK — Clock input |
| 引脚 C2 | CK# — Complementary clock input |
| 引脚 C3 | CKE — Clock enable |
| 引脚 D1 | CS# — Chip select |
| 引脚 D2 | RAS# — Row address strobe |
| 引脚 D3 | CAS# — Column address strobe |
| 引脚 E1 | WE# — Write enable |
| 引脚 E2 | BA0 — Bank address 0 |
| 引脚 E3 | BA1 — Bank address 1 |
| 引脚 F1 | BA2 — Bank address 2 |
| 引脚 F2 | A0 — Address input 0 |
| 引脚 F3 | A1 — Address input 1 |
典型应用
NT5CC256M16CP-DI 适用于 6 应用s: Laptop Memory Modules, Networking Equipment, Industrial Computing, Automotive Infotainment, Embedded Systems, Server Memory.
Laptop Memory Modules
The NT5CC256M16CP-DI is used in DDR3L SO-DIMM modules for laptops, providing 4GB capacity with low power consumption. Its 1.35V operation extends battery life, and the 256Mx16 organization supports dual-channel configurations. The VFBGA-96 package allows compact module design, and the industrial temperature range ensures reliability in various environments.
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Networking Equipment
In routers and switches, the NT5CC256M16CP-DI provides high-bandwidth memory for packet buffering and routing tables. Its DDR3-1600 speed and 16-bit data bus deliver fast data transfer, while the 1.35V supply reduces power dissipation in dense line cards. The device's on-die termination improves signal integrity in high-speed designs, and the commercial temperature range suits indoor networking gear.
推荐
Industrial Computing
The NT5CC256M16CP-DI is ideal for industrial PCs and embedded controllers that require reliable memory in harsh environments. Its industrial temperature rating (if available) supports operation from -40C to +95C, and the 1.35V low-voltage operation reduces heat generation. The VFBGA-96 package withstands vibration and thermal cycling, making it suitable for factory automation and process control systems.
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Automotive Infotainment
In automotive infotainment systems, the NT5CC256M16CP-DI provides memory for navigation, audio, and display processing. Its automotive temperature range (if available) ensures operation in extreme conditions, and the 1.35V supply is compatible with automotive power rails. The device's high-speed interface supports smooth multimedia playback, and its low power consumption helps manage vehicle battery load.
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Embedded Systems
The NT5CC256M16CP-DI is used in embedded systems requiring high-density memory, such as single-board computers and IoT gateways. Its 4Gb capacity and 16-bit interface provide ample storage for operating systems and applications. The 1.35V operation is ideal for power-constrained designs, and the VFBGA-96 package fits compact PCBs. The device supports self-refresh mode for low-power standby.
推荐
Server Memory
The NT5CC256M16CP-DI can be used in entry-level server memory modules, providing cost-effective DDR3L capacity. Its 1.35V operation reduces data center power consumption, and the 256Mx16 organization supports ECC and non-ECC configurations. The device's high-speed interface meets the demands of cloud computing and virtualization, while the commercial temperature range is suitable for controlled server rooms.
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推荐产品汇总
工程参考数据： NT5CC256M16CP-DI ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | NT5CC256M16DP-DI | MT41K256M16HA-125 | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | VFBGA-96 | VFBGA-96 | VFBGA-96 | VFBGA-96 |
| Brand | Nanya | Nanya | Micron | Samsung |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
关键差异点
- Low voltage operation at 1.35V （对比 Standard DDR3 at 1.5V)
- Wide temperature range support （对比 Commercial-only DDR3L)
- 70nm process technology （对比 Older process nodes)
设计说明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route the differential clock traces (CK, CK#) with controlled impedance (typically 50 ohms single-ended, 100 ohms differential) and matched lengths to ensure signal integrity.
For DDR3L-1600 operation, maintain proper termination on data, address, and control signals. Use on-die termination (ODT) settings as recommended in the datasheet. Keep trace lengths matched within 0.5mm for data groups and 1mm for address/control to avoid timing violations. Reference the layout guidelines in the Nanya datasheet.
The NT5CC256M16CP-DI dissipates minimal power due to 1.35V operation, but ensure adequate airflow or a thermal pad for high-temperature environments. The VFBGA-96 package has a thermal resistance of [DATA_NEEDED] C/W. For automotive applications, verify the junction temperature stays within the specified range.
合规信息
RoHS compliant per FindIC listing. AEC-Q100 not applicable for DRAM; automotive grade may be available but not confirmed.
