NT5CC256M16CP-DI vs H5TC4G63AFR-PBA Comparison
Detailed side-by-side comparison of NT5CC256M16CP-DI by Nanya Technology and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5CC256M16CP-DI
NT5CC256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16CP-DI β Active
Specification Comparison
| Parameter | NT5CC256M16CP-DI | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.90 | $3.98 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Organization | 256M x 16 | 256M x 16 |
| Total Density | 4Gb | β |
| Supply Voltage | 1.35V (1.283V to 1.45V) | β |
| Speed Grade | DDR3-1600 (CL11) | β |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 | 11, 12, 13 |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | β |
| Internal Banks | 8 | β |
| Package | VFBGA-96 | 96-ball FBGA |
| Operating Temperature | 0C to +95C (Tc) [DATA_NEEDED: exact range] | β |
| Interface | Differential clock (CK, CK#) | 16-bit I/O |
| Burst Length | 8, 4 | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (programmable) | β |
| RoHS | Compliant | Compliant |
| Process Technology | 70nm | β |
| Density | β | 4Gb |
| Supply Voltage (VDD/VDDQ) | β | 1.35V |
| Data Rate | β | 1866 Mbps (PC3L-14900) |
| Ball Pitch | β | 0.8mm |
| Number of Banks | β | 8 |
| Operating Temperature Range | β | 0Β°C to +95Β°C (Tcase) |
| On-Die Termination (ODT) | β | Yes |
| ZQ Calibration | β | Yes |
| Write Leveling | β | Yes |
| Auto Self-Refresh | β | Yes |
| Partial Array Self-Refresh | β | Yes |