NT5CC256M16CP-DIB1 vs NT5CB256M16CP-DIH 对比
详细并排对比 NT5CC256M16CP-DIB1 出自 Nanya Technology 和 NT5CB256M16CP-DIH 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5CC256M16CP-DIB1 | NT5CB256M16CP-DIH |
|---|---|---|
| 品牌 | Nanya Technology | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.00 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.35V | — |
| 数据速率 | 1600Mbps (DDR3L-1600) | 1600Mbps (DDR3L-1600) |
| 封装 | TFBGA-96, 9x13mm, 0.8mm pitch | 96-ball TFBGA |
| Number of Banks | 8 | — |
| CAS Latency (CL) | 11 | 5, 6, 7, 8, 9 |
| Write Latency (CWL) | 8 | — |
| tRCD/tRP | 11 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | — |
| 工作温度 | 0C to +95C (Tcase) | -40°C to +95°C (industrial) |
| RoHS | Compliant | Compliant |
| 无卤 | Yes | — |
| Lead Free | Yes | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (±0.075V) |
| Internal Banks | — | 8 (BA0-BA2) |
| WRITE Latency (CWL) | — | 5, 6, 7, 8, 9 |
| 接口 | — | SSTL_15 |
| REACH | — | Compliant |
| Lead-Free | — | Yes |
| Process Technology | — | 70nm |