NT5CC256M16DP-FLNA vs NT5CC256M16DP-DI 对比
详细并排对比 NT5CC256M16DP-FLNA 出自 Nanya Technology 和 NT5CC256M16DP-DI 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5CC256M16DP-FLNA | NT5CC256M16DP-DI |
|---|---|---|
| 品牌 | Nanya Technology | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $20.00 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储组织 | 256M x 16 | 256M x 16 |
| Total Density | 4 Gb | — |
| 电源电压 | 1.35 V (1.283 V to 1.45 V) | 1.35V |
| 数据速率 | 1600 Mbps (PC3L-12800) | 1600 Mbps/pin (800MHz) |
| CAS 延迟 | 11, 12, 13 | 11, 12, 13 (programmable) |
| Burst Length | 8, 4 (with burst chop) | 8, 4 (with burst chop) |
| Number of Banks | 8 | 8 |
| 接口 | SSTL-15 | Differential clock (CK, CK#) |
| 封装 | BGA-96 (13x9 mm) | VFBGA-96 |
| 工作温度 | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Refresh | Auto self-refresh, auto precharge | Auto-refresh and self-refresh |
| 特性 | Write leveling, dynamic ODT, ZQ calibration, data mask, asynchronous reset | — |
| Density | — | 4Gb |
| 工作温度范围 | — | -40°C to +95°C (industrial) |
| On-Die Termination | — | Yes (ODT) |