NT5CC256M16DP-FLNA - 4Gb DDR3L SDRAM | Nanya Technology
料号： NT5CC256M16DP-FLNA ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $29.81 | $29.81 |
| 10 | $27.5 | $275.00 |
| 100 | $25 | $2,500.00 |
| 500 | $22 | $11,000.00 |
| 1,000 | $20 | $20,000.00 |
NT5CC256M16DP-FLNA 概述
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal, achieving high data rates. DDR3L is commonly used in mobile devices, embedded systems, and industrial applications where power efficiency is critical.
Key features include a 16-bit data bus, 8 internal banks, programmable CAS latency (CL 11, 12, 13), burst lengths of 8 and 4 (with burst chop), on-die termination (ODT) for signal integrity, and ZQ calibration for improved timing. The device supports auto self-refresh, auto precharge, and write leveling, ensuring robust operation in various system conditions. It also includes a data mask function and asynchronous reset for enhanced control.
The NT5CC256M16DP-FLNA utilizes advanced CMOS technology, achieving low power consumption and high reliability. The 96-ball BGA package provides excellent thermal and electrical performance, with a thermal resistance of and operating temperature range of -40°C to +95°C (industrial) and -40°C to +105°C (automotive). The device is RoHS compliant and lead-free.
Typical applications include networking equipment (routers, switches), industrial automation, automotive infotainment and ADAS, and embedded computing systems. Its low voltage and high density make it ideal for memory-intensive tasks in space-constrained designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ pin requires a 240-ohm resistor to ground for calibration.
直接替换替代料： NT5CC256M16DP-FLNA ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： NT5CC256M16DP-FLNA （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Supply Voltage, CAS Latency, Interface.
快速对比工具——选择替代料号进行并排对比：
NT5CC256M16DP-DI
✅ 直接替换✓ 有现货
$6.5 / 个
查看数据手册 →NT5CC256M16DP-DII
✅ 直接替换📋 参考替代料（不在目录中）
MT41K256M16HA-125
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.3636 / 个
查看数据手册 →IS43TR16512B-125K
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
K4B4G1646E-BYMA
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$14.3182 / 个
查看数据手册 →NT5CC256M16DP-FLNA 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| 存储组织 | 256M x 16 |
| Total Density | 4 Gb |
| 电源电压 | 1.35 V (1.283 V to 1.45 V) |
| 数据速率 | 1600 Mbps (PC3L-12800) |
| CAS 延迟 | 11, 12, 13 |
| Burst Length | 8, 4 (with burst chop) |
| Number of Banks | 8 |
| 接口 | SSTL-15 |
| 封装 | BGA-96 (13x9 mm) |
| 工作温度 | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Refresh | Auto self-refresh, auto precharge |
| 特性 | Write leveling, dynamic ODT, ZQ calibration, data mask, asynchronous reset |
NT5CC256M16DP-FLNA 引脚配置
| 引脚 A1 | VDD — Power supply (1.35V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ2 — Data input/output 2 |
| 引脚 B3 | DQ3 — Data input/output 3 |
| 引脚 C1 | VDDQ — I/O power supply |
| 引脚 C2 | DQ4 — Data input/output 4 |
| 引脚 C3 | DQ5 — Data input/output 5 |
| 引脚 D1 | VSSQ — I/O ground |
| 引脚 D2 | DQ6 — Data input/output 6 |
| 引脚 D3 | DQ7 — Data input/output 7 |
| 引脚 E1 | DQS0 — Data strobe 0 |
| 引脚 E2 | DQS0# — Data strobe 0 complement |
| 引脚 E3 | VSS — Ground |
| 引脚 F1 | A0 — Address input 0 |
| 引脚 F2 | A1 — Address input 1 |
| 引脚 F3 | A2 — Address input 2 |
| 引脚 G1 | A3 — Address input 3 |
| 引脚 G2 | A4 — Address input 4 |
| 引脚 G3 | A5 — Address input 5 |
| 引脚 H1 | A6 — Address input 6 |
| 引脚 H2 | A7 — Address input 7 |
| 引脚 H3 | A8 — Address input 8 |
| 引脚 J1 | A9 — Address input 9 |
| 引脚 J2 | A10/AP — Address input 10 / auto precharge |
| 引脚 J3 | A11 — Address input 11 |
| 引脚 K1 | A12 — Address input 12 |
| 引脚 K2 | A13 — Address input 13 |
| 引脚 K3 | A14 — Address input 14 |
| 引脚 L1 | BA0 — Bank address 0 |
| 引脚 L2 | BA1 — Bank address 1 |
| 引脚 L3 | BA2 — Bank address 2 |
| 引脚 M1 | CK — Clock input |
| 引脚 M2 | CK# — Clock input complement |
| 引脚 M3 | CKE — Clock enable |
| 引脚 N1 | CS# — Chip select |
| 引脚 N2 | RAS# — Row address strobe |
| 引脚 N3 | CAS# — Column address strobe |
| 引脚 P1 | WE# — Write enable |
| 引脚 P2 | ODT — On-die termination |
| 引脚 P3 | RESET# — Asynchronous reset |
| 引脚 R1 | ZQ — Calibration reference (240 ohm to ground) |
| 引脚 R2 | VDD — Power supply |
| 引脚 R3 | VSS — Ground |
典型应用
NT5CC256M16DP-FLNA 适用于 6 应用s: Networking Equipment, Industrial Automation, Automotive Infotainment, Embedded Computing, Data Acquisition Systems, Medical Devices.
Networking Equipment
The NT5CC256M16DP-FLNA provides high-density, low-power memory for routers and switches. Its 4Gb capacity and 1600 Mbps data rate support high-throughput packet processing. The 1.35V operation reduces power consumption in always-on network devices, while the industrial temperature range ensures reliability in uncontrolled environments. Placed on the memory bus with proper termination, it handles burst traffic efficiently, improving overall system performance.
推荐
Industrial Automation
In industrial automation, the NT5CC256M16DP-FLNA offers reliable memory for PLCs and robotics controllers. Its wide temperature range (-40°C to +95°C) and low voltage (1.35V) make it suitable for harsh factory floors. The auto self-refresh and write leveling features ensure data integrity during power fluctuations. It interfaces with industrial microcontrollers via a standard DDR3L bus, providing fast access for real-time control algorithms.
推荐
Automotive Infotainment
The NT5CC256M16DP-FLNA supports automotive infotainment systems with its automotive temperature grade (-40°C to +105°C) and high bandwidth. It enables smooth multimedia playback and navigation. The 1.35V operation reduces heat generation in the cabin, and the BGA package withstands vibration. It connects to automotive SoCs via a DDR3L interface, providing fast data access for graphics and audio processing.
推荐
Embedded Computing
For embedded computing, the NT5CC256M16DP-FLNA offers a balance of density and power efficiency. Its 4Gb capacity is ideal for Linux-based systems and edge computing. The low voltage (1.35V) extends battery life in portable devices. The device supports burst lengths of 8 and 4, optimizing memory throughput. It is compatible with a wide range of application processors, making it a versatile choice for custom embedded designs.
推荐
Data Acquisition Systems
The NT5CC256M16DP-FLNA is used in data acquisition systems to buffer large amounts of sensor data. Its high data rate (1600 Mbps) allows rapid sampling and storage. The industrial temperature range ensures operation in remote monitoring stations. The auto precharge and data mask features simplify control logic. It interfaces with ADCs and DSPs via a DDR3L bus, enabling high-speed data logging.
推荐
Medical Devices
In medical devices, the NT5CC256M16DP-FLNA provides reliable memory for imaging and monitoring equipment. Its low power consumption is critical for battery-operated devices. The industrial temperature range ensures stable operation in clinical environments. The device's error-free performance and long lifecycle make it suitable for medical applications. It connects to medical-grade processors, supporting real-time data processing.
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推荐产品汇总
工程参考数据： NT5CC256M16DP-FLNA ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | NT5CC256M16DP-DI | NT5CC256M16DP-DII | MT41K256M16HA-125 | IS43TR16512B-125K | K4B4G1646E-BYMA |
|---|---|---|---|---|---|---|
| Package | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | ISSI | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 8 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 512M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps | 1866 Mbps |
| Temperature Range | -40°C to +95°C (industrial) | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C |
| CAS Latency | 11, 12, 13 | 11, 12, 13 | 12, 13, 14 | 11, 12, 13 | 11, 12, 13 | 12, 13, 14 |
关键差异点
- Industrial and automotive temperature grades （对比 MT41K256M16HA-125)
- Lower power consumption at 1.35V （对比 K4B4G1646E-BYMA)
- Pin-compatible with multiple Nanya variants （对比 IS43TR16512B-125K)
设计说明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane and minimize trace lengths for DQ and DQS signals. Follow the layout guidelines in the Nanya datasheet to ensure signal integrity at 1600 Mbps.
The BGA-96 package has a thermal resistance of [DATA_NEEDED: theta_JA]. Ensure adequate airflow or a thermal pad for high-temperature operation. In automotive applications, consider the -40°C to +105°C range and design for heat dissipation.
Connect a 240-ohm resistor from the ZQ pin to ground for calibration. Do not leave the RESET# pin floating; tie it high for normal operation. Ensure the supply voltage is within 1.283V to 1.45V to avoid data corruption.
合规信息
RoHS compliant per Nanya datasheet. AEC-Q100 not specified; automotive grade may require additional qualification.
