PC28F640P30BF65B-TR vs PC28F640P30BF65B 对比

详细并排对比 PC28F640P30BF65B-TR 出自 Micron Technology 和 PC28F640P30BF65B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
PC28F640P30BF65B-TR PC28F640P30BF65B-TR - 64Mb Parallel NOR Flash, 52MHz | Micron

PC28F640P30BF65B-TR - 64Mb Parallel NOR Flash, 52MHz | Micron

PC28F640P30BF65B-TR Nrnd

规格对比

参数 PC28F640P30BF65B-TR PC28F640P30BF65B
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 不推荐新设计 不推荐新设计
库存状态 有库存 有库存
单价(USD) $2.55 $5.03
Density 64 Mbit (4M x 16) —
存储器类型 Non-Volatile Flash (NOR) Non-Volatile FLASH - NOR (CFI)
Process Technology P30-65nm Axcell —
Boot Block Location Bottom —
Architecture 128 KB uniform blocks + 4 KB parameter blocks —
VCC (Core) Range 1.7 V to 2.0 V —
VCCQ (I/O) Range 1.7 V to 3.6 V —
接口 Parallel (asynchronous + synchronous burst) —
Synchronous Burst Frequency 52 MHz —
Asynchronous Access Time 65 ns (75 ns in some datasheet revisions) —
封装 64-ball EasyBGA (10x13 mm) —
工作温度 -40 C to +85 C -40C to +85C
Block Erase Time (typ.) 0.4 s —
Word Program Time (typ.) 100 us —
Endurance (per block) 100,000 cycles —
Data Retention 20 years (typical) —
Compliance RoHS —
存储容量 — 64 Mbit
Memory Organization — 4M x 16
数据总线宽度 — 16 bit (x16)
接口类型 — Parallel
Access Time — 65 ns
Burst Read Clock Frequency — 52 MHz
Write Cycle Time - Word, Page — 65 ns
Sector Architecture — Bottom Boot (parameter/small boot blocks at low addresses)
Supply Voltage - VCC — 1.7 V to 2.0 V
Supply Voltage - VCCQ (I/O) — [DATA_NEEDED: VCCQ range per P30 datasheet, typically 1.7V-3.6V]
封装 / 外壳 — 64-EasyBGA (10x13 mm)
安装类型 — Surface Mount
Program/Erase Endurance — [DATA_NEEDED: typical 100K cycles per sector per P30 datasheet]
RoHS 状态 — [DATA_NEEDED: per latest Alliance/Micron PCN]
Lead-Free — [DATA_NEEDED]
MSL 等级 — [DATA_NEEDED: per EasyBGA JEDEC J-STD-020 rating]

数据手册与资源

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