RTAX2000S-1CQ352PROTO vs RTAX2000D-1CQ352B 对比
详细并排对比 RTAX2000S-1CQ352PROTO 出自 Microchip Technology 和 RTAX2000D-1CQ352B 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Microchip Technology
RTAX2000S-1CQ352PROTO - Rad-Tolerant FPGA 2M Gates | Microchip
RTAX2000S-1CQ352PROTO ✓ 量产中Microchip Technology
RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352B ✓ 量产中规格对比
| 参数 | RTAX2000S-1CQ352PROTO | RTAX2000D-1CQ352B |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $3,120.00 |
| Family | RTAX-S Radiation-Tolerant FPGA | RTAX-S/SL and RTAX-DSP (RTAX2000D) |
| Series | RTAX2000S | — |
| Configurable Logic Blocks (CLBs) | 21504 | — |
| Equivalent System Gates | 2000000 | 2,000,000 |
| Process Technology | CMOS | — |
| Programmability Type | Antifuse (one-time programmable) | — |
| Configuration | Live at power-up, single chip | Live at power-up, no external configuration device (antifuse) |
| Speed Grade | -1 | -1 |
| Device Designation | PROTO (prototyping / engineering) | — |
| Temperature Grade | C (commercial) | — |
| 封装 | CQFP352 (ceramic quad flat pack, 352 leads) | 352-pin Ceramic Column Grid Array (CQ352) |
| 安装类型 | Surface Mount | Surface Mount (ceramic column grid array) |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| 电源电压 | [DATA_NEEDED: core supply voltage] | — |
| Maximum I/O Count | [DATA_NEEDED: user I/O count for CQ352 package] | — |
| Embedded SRAM | [DATA_NEEDED: embedded SRAM block capacity] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| Technology | — | Antifuse (nonvolatile), Digital CMOS |
| CLBs (Logic Cells) | — | 19,712 CLBs / 29,568 logic cells (per family organization) |
| DSP Mathblocks | — | Up to 120 (18-bit x 18-bit MAC) |
| DSP Performance | — | 125 MHz 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Total Ionizing Dose | — | 300 krad (Si) functional / 200 krad (Si) with operation |
| Core Supply Voltage | — | 1.5 V nominal (1.425 V to 1.575 V) |
| Temperature Range | — | Commercial (C) |
| Routing Features | — | Segmentable clocks, chip-wide highway routing, carry logic |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Application Domain | — | Space-flight, radiation-tolerant |