W971GG6SB25I vs MT47H64M16HR-25E IT:H 对比

详细并排对比 W971GG6SB25I 出自 Winbond 和 MT47H64M16HR-25E IT:H 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Winbond
W971GG6SB25I W971GG6SB25I - 1Gbit DDR2 SDRAM | Winbond | 84-WBGA

W971GG6SB25I - 1Gbit DDR2 SDRAM | Winbond | 84-WBGA

W971GG6SB25I ✓ 量产中
Micron Technology
MT47H64M16HR-25E IT:H MT47H64M16HR-25E IT:H - 1Gb DDR2 SDRAM 400MHz 84-FBGA | Micron

MT47H64M16HR-25E IT:H - 1Gb DDR2 SDRAM 400MHz 84-FBGA | Micron

MT47H64M16HR-25E IT:H ✓ 量产中

规格对比

参数 W971GG6SB25I MT47H64M16HR-25E IT:H
品牌 Winbond Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.48 $2.21
存储器类型 Volatile, DDR2 SDRAM DDR2 SDRAM (volatile)
Density 1 Gbit (1,073,741,824 bits) —
存储组织 8M words × 8 banks × 16 bits 8 Meg x 16 x 8 banks
Maximum Data Rate 400 MT/s (DDR2-800) —
Clock Frequency 200 MHz 400 MHz
Random Access Time 57.5 ns —
Bus Width 16 bits —
Supply Voltage (VDD / V_DDQ) 1.8 V (JEDEC SSTL-18) —
接口类型 Parallel, SSTL-18 —
工作温度 -40 °C to +85 °C (industrial) -40C to +85C (Industrial, IT:H)
Package Type 84-WBGA / 84-TFBGA, 8.0 × 12.5 mm —
安装类型 Surface Mount —
Number of Pins / Balls 84 —
Bank Count 8 —
On-Die Termination (ODT) Yes (per JEDEC DDR2) —
Refresh Auto-refresh and self-refresh —
Speed Grade Suffix 25I (DDR2-800 6-6-6, industrial) —
Compliance JEDEC DDR2 standard —
RoHS 状态 Compliant (lead-free) Compliant (lead-free)
存储容量 — 1 Gbit (64M x 16)
Access Time — 400 ps
Data Rate (effective) — 800 MT/s
接口 — Parallel (byte-wide)
Prefetch Architecture — 4n-bit
Supply Voltage VDD — 1.8 V ±0.1 V
Supply Voltage VDDQ — 1.8 V ±0.1 V (SSTL_18)
I/O Standard — JEDEC SSTL_18-compatible
Data Strobe — Differential (DQS, DQS#)
封装 — 84-TFBGA (8 mm x 12.5 mm)

数据手册与资源

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