MT47H64M16HR-25E IT:H - 1Gb DDR2 SDRAM 400MHz 84-FBGA | Micron
料号： MT47H64M16HR-25E IT:H ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $3.92 | $3.92 |
| 10 | $3.47 | $34.70 |
| 100 | $2.95 | $295.00 |
| 500 | $2.58 | $1,290.00 |
| 1,000 | $2.21 | $2,210.00 |
MT47H64M16HR-25E IT:H 概述
What is DDR2 SDRAM? DDR2 (Double Data Rate 2) Synchronous DRAM is the second generation of DDR memory technology, succeeding DDR1. It uses a 4n-bit prefetch architecture (vs 2n-bit in DDR1) to double the data rate per I/O pin without increasing the core clock frequency. Within the broader memory taxonomy, DDR2 SDRAM sits under DRAM -> volatile memory -> semiconductor memory. Compared with DDR3, DDR2 operates at lower voltages (1.8 V vs 1.25 V nominal) and lower data rates, but remains widely deployed in legacy industrial, networking, and embedded designs where long lifecycles and proven reliability outweigh the need for maximum bandwidth.
Key features of the MT47H64M16HR-25E IT:H include the JEDEC-standard 1.8 V I/O (SSTL_18-compatible) interface, differential data strobe (DQS, DQS#) for robust signal capture, and a duplicate output option for reduced loading. The 4n-bit prefetch architecture transfers 4 data words per internal clock cycle, achieving 800 MT/s effective data rate at the 400 MHz clock speed. The 84-ball TFBGA package is footprint-compatible with the broader MT47H family, enabling PCB reuse across density options.
The MT47H family is built on a CMOS process with on-die termination (ODT) and programmable CAS latency (CL), and supports self-refresh mode for low-power standby. The IT:H suffix designates the industrial temperature grade (-40C to +85C) with RoHS-compliant lead-free packaging, making the part suitable for harsh-environment and long-lifecycle applications where consumer-grade parts would fail.
Typical applications include networking line cards and switches, industrial controllers and HMI panels, automotive infotainment systems, printer imaging buffers, and legacy embedded computing platforms. The 400 MHz / 800 MT/s data rate is sufficient for Gigabit Ethernet frame buffers, video processing pipelines, and OS image storage in mid-range embedded systems.
When designing with this device, ensure the host controller supports DDR2 timing parameters (tRCD, tRP, tRFC) and that the PCB layer stack-up is tuned for 1.8 V SSTL_18 signaling with controlled impedance. Use matched-length routing for the DQS/DQS# differential pair and follow JEDEC SSTL_18 termination guidelines. The IT:H temperature grade supports industrial environments; for automotive applications requiring -40C/+105C, evaluate the MT47H64M16HR-25E AIT:H variant instead.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet alone, providing an information-gain reference for engineers specifying DDR2 memory.
直接替换替代料： MT47H64M16HR-25E IT:H ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT47H64M16HR-25E IT:H （相同外形与封装尺寸） ——差异在于 Clock Frequency, Memory Type, Operating Temperature, Organization.
快速对比工具——选择替代料号进行并排对比：
MT47H64M16HR-25E AIT:H
✅ 直接替换📋 参考替代料（不在目录中）
MT47H64M16HR-25E:H
✅ 直接替换📋 参考替代料（不在目录中）
MT47H64M16HR-25:H
✅ 直接替换📋 参考替代料（不在目录中）
MT47H64M16NF-25E IT:H
✅ 直接替换📋 参考替代料（不在目录中）
MT47H64M16HR-25E IT
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MT47H128M8SH-25E IT:M
✅ 直接替换📋 参考替代料（不在目录中）
MT47H64M16HR-25E IT:H 最大额定值与电气特性
| 存储器类型 | DDR2 SDRAM (volatile) |
| 存储容量 | 1 Gbit (64M x 16) |
| 存储组织 | 8 Meg x 16 x 8 banks |
| Clock Frequency | 400 MHz |
| Access Time | 400 ps |
| Data Rate (effective) | 800 MT/s |
| 接口 | Parallel (byte-wide) |
| Prefetch Architecture | 4n-bit |
| Supply Voltage VDD | 1.8 V ±0.1 V |
| Supply Voltage VDDQ | 1.8 V ±0.1 V (SSTL_18) |
| I/O Standard | JEDEC SSTL_18-compatible |
| Data Strobe | Differential (DQS, DQS#) |
| 封装 | 84-TFBGA (8 mm x 12.5 mm) |
| 工作温度 | -40C to +85C (Industrial, IT:H) |
| RoHS 状态 | Compliant (lead-free) |
MT47H64M16HR-25E IT:H 84-tfbga (8 mm x 12.5 mm) 引脚配置指南
MT47H64M16HR-25E IT:H（84-tfbga (8 mm x 12.5 mm) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT47H64M16HR-25E IT:H.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT47H64M16HR-25E IT:H 适用于 6 应用s: Networking Line Card Memory, Industrial Controller and HMI, Automotive Infotainment Buffer, Printer Imaging Buffer, Embedded Computing and SBCs, Test and Measurement Instrumentation.
Networking Line Card Memory
The MT47H64M16HR-25E IT:H is well suited for Gigabit Ethernet line cards and access switches where 1 Gbit of DDR2 buffer memory is required for packet queuing and table storage. With 400 MHz clock and 800 MT/s effective data rate, the part provides 6.4 GB/s peak bandwidth across 16 DQ lanes, sufficient for line-rate buffering at 1 Gbps with headroom for QoS queues. Industrial temperature (-40C to +85C) ensures reliability in outdoor-cabinet and thermally loaded chassis. Differential DQS/DQS# strobe pairs maintain signal integrity across the 8 mm x 12.5 mm BGA footprint even with the dense board layouts typical of networking line cards. Designers should follow JEDEC SSTL_18 termination and use matched-length routing for DQ/DQS groups to preserve timing margins.
推荐
Industrial Controller and HMI
For industrial controllers, PLCs, and HMI panels operating in factory environments, the MT47H64M16HR-25E IT:H provides 64M x 16 of working memory with industrial-grade -40C to +85C operation. DDR2 SDRAM supports long product lifecycles typical of industrial automation (10-15 years), and Micron's MT47H family is broadly available through industrial distribution channels. The 84-TFBGA package is footprint-compatible with the broader MT47H family, enabling PCB reuse across controller variants (256 Mbit, 512 Mbit, 1 Gbit) without layout changes. Differential DQS and SSTL_18 I/O deliver robust signaling even in noisy industrial EMI environments. Designers should implement proper VDD/VDDQ bulk decoupling and follow JEDEC SSTL_18 termination networks.
推荐
Automotive Infotainment Buffer
The MT47H64M16HR-25E IT:H is commonly used in automotive infotainment head units as frame buffer memory for display controllers, navigation map data, and audio/video decoding pipelines. The IT:H industrial temperature grade handles cabin-temperature swings, while the AIT:H variant extends to +105C for under-dash deployments. With 1 Gbit capacity and 64M x 16 organization, the device holds multiple video frames for rear-view cameras, navigation tiles, or display compositor layers. The 84-ball TFBGA package (8 mm x 12.5 mm) fits beneath BGA-compat automotive SoCs and supports reflow profiles typical of automotive PCB assembly. Designers should validate timing margins against worst-case automotive temperature corners.
推荐
Printer Imaging Buffer
Office and production printers use the MT47H64M16HR-25E IT:H as scan-line or page-buffer memory between the print engine and image processor. A 1 Gbit buffer at 800 MT/s supports full-letter page rasterization at 600 DPI without compression, enabling duplex and high-page-rate modes. The 84-TFBGA footprint integrates cleanly beneath image-processor SoCs in compact printer mainboards. The differential DQS/DQS# strobe and SSTL_18 I/O standard provide stable signaling over the long matched-length traces typical of printer mainboards, which often span multiple PCB sections. The IT:H industrial temperature grade supports the warm enclosure conditions inside printer chassis during extended print runs.
推荐
Embedded Computing and SBCs
Single-board computers (SBCs), COM (Computer-on-Module) carrier boards, and legacy embedded computing platforms with DDR2 memory controllers use the MT47H64M16HR-25E IT:H as the primary working memory. A 64M x 16 configuration provides ample RAM for embedded Linux, RTOS, and OS image storage on platforms where DDR3 migration has not yet occurred. The industrial temperature grade supports fanless enclosures and outdoor kiosks. The 84-TFBGA package is footprint-compatible across the MT47H density family, allowing OEM upgrade paths from 256 Mbit to 1 Gbit with a single PCB layout. Designers must comply with JEDEC SSTL_18 termination and ensure controller-DRAM timing compatibility.
推荐
Test and Measurement Instrumentation
Test and measurement equipment - oscilloscopes, logic analyzers, protocol analyzers, and signal generators - frequently use the MT47H64M16HR-25E IT:H as waveform-capture or pattern-generator memory. At 800 MT/s, the part captures or plays back high-speed serial protocol patterns with adequate margin. The industrial temperature grade supports benchtop and laboratory environments with stable thermal performance. The 84-ball TFBGA package is small enough to fit on instrument mainboards next to high-speed ADC/DAC and FPGA front-end devices, while the differential DQS/DQS# strobe pair ensures capture integrity for deep acquisition memory. Designers should isolate the DRAM supply from switching power supplies to minimize noise coupling into the analog front end.
推荐
推荐产品汇总
工程参考数据： MT47H64M16HR-25E IT:H ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT47H64M16HR-25E AIT:H | MT47H64M16HR-25E:H | MT47H64M16HR-25:H | MT47H64M16NF-25E IT:H | MT47H64M16HR-25E IT | MT47H128M8SH-25E IT:M |
|---|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 84-TFBGA (8x12.5 mm) | 84-TFBGA - same | 84-TFBGA - same | 84-TFBGA - same | 84-TFBGA - same | 84-TFBGA - same | 84-TFBGA - same |
| Memory Type | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM |
| Density | 1 Gbit (64M x 16) | 1 Gbit (64M x 16) | 1 Gbit (64M x 16) | 1 Gbit (64M x 16) | 1 Gbit (64M x 16) | 1 Gbit (64M x 16) | 1 Gbit (128M x 8) |
| Clock Frequency | 400 MHz | 400 MHz | 400 MHz | 400 MHz | 400 MHz | 400 MHz | 400 MHz |
| Operating Temperature | -40C to +85C (Industrial) | -40C to +105C (Extended/Auto) | 0C to +70C (Commercial) | 0C to +70C (Commercial) | -40C to +85C (Industrial) | -40C to +85C (Industrial) | -40C to +85C (Industrial) |
| Supply Voltage (VDD/VDDQ) | 1.8 V ±0.1 V | 1.8 V ±0.1 V | 1.8 V ±0.1 V | 1.8 V ±0.1 V | 1.8 V ±0.1 V | 1.8 V ±0.1 V | 1.8 V ±0.1 V |
| Organization | x16 | x16 | x16 | x16 | x16 | x16 | x8 |
| I/O Standard | SSTL_18 | SSTL_18 | SSTL_18 | SSTL_18 | SSTL_18 | SSTL_18 | SSTL_18 |
关键差异点
- Industrial temperature grade with same family pinout （对比 MT47H64M16HR-25E:H)
- Wider temp range upgrade path in same footprint （对比 MT47H64M16HR-25E AIT:H)
- Lower-power 1.8V DDR2 operation vs DDR3 alternatives （对比 Generic DDR3 1 Gbit SDRAM)
设计说明
Follow JEDEC SSTL_18 termination for the MT47H64M16HR-25E IT:H. Use a VTT termination voltage of 0.9 V (VDDQ/2) with parallel resistor termination at the receiver end. Route the DQS/DQS# differential pair with matched lengths within +/- 25 mil, and route DQ byte groups with matched lengths to within +/- 50 mil. Place VDD and VDDQ bulk capacitors (typically 10uF + 100nF per ball cluster) as close as possible to the BGA balls. Maintain solid reference planes on adjacent layers to control impedance (target 50 ohm single-ended, 100 ohm differential for DQS).
Although DDR2 SDRAM does not dissipate significant power, refresh current at high temperature can be non-trivial. At +85C the MT47H64M16HR-25E IT:H refresh current increases roughly 2x compared to room temperature. Ensure the device's junction temperature stays within the datasheet's -40C to +85C operating range; for chassis with restricted airflow, derate ambient by 10-15C and validate using a thermal probe or IR camera on the BGA top side during worst-case workload (continuous read/write cycling).
Use series damping resistors (typically 22-33 ohm) on the address/command bus and on clock signals near the controller to reduce reflections. For the MT47H64M16HR-25E IT:H's 84-ball TFBGA package, breakout routing on the top layer should escape vertically with vias-in-pad allowed for inner balls. Enable on-die termination (ODT) via the DDR2 controller's mode register; ODT reduces bus reflections and improves signal integrity at 400 MHz operation. Run SI simulation with IBIS models provided by Micron before committing to PCB fabrication.
Common pitfalls with the MT47H64M16HR-25E IT:H include: (1) failing to program the controller's DDR2 timing registers to match the speed bin (-25E = 400 MHz / CL=5 typical); (2) omitting ZQ calibration at power-up, which leaves output drivers mis-calibrated; (3) using incorrect SSTL_18 VTT supply tolerance - it must track VDDQ within 2%; (4) assuming the H and IT:H parts are interchangeable without firmware checks for the industrial temp range. Always perform read/write margin testing at temperature corners.
合规信息
RoHS-compliant per Micron product page; lead-free (Pb-free) assembly. Industrial temperature grade -40C to +85C. AEC-Q100 not applicable for the IT:H variant; for automotive AEC-Q qualified parts, choose the AIT:H suffix or higher-grade members of the MT47H family.
