1ED44173N01BXTSA1 - 25V 2.6A Low-Side Gate Driver | Infineon
料号： 1ED44173N01BXTSA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.84 | $0.84 |
| 10 | $0.72 | $7.20 |
| 100 | $0.59 | $59.00 |
| 500 | $0.48 | $240.00 |
| 1,000 | $0.42 | $420.00 |
1ED44173N01BXTSA1 概述
A low-side gate driver is a type of gate driver IC that switches the gate of a low-side N-channel MOSFET between the system ground and the gate-drive supply. Gate drivers sit in the power management signal chain between a logic-level PWM controller (typically 3.3 V or 5 V CMOS) and a power MOSFET that requires a 10-15 V gate voltage for full enhancement. Low-side drivers like the 1ED44173 belong to the gate driver IC family under power management ICs and are essential for switch-mode power supplies, motor drives, and synchronous rectification stages where the controller cannot source enough current to charge the MOSFET's large gate capacitance quickly.
Key features of the 1ED44173 include 4.5 V to 25 V VCC operating range, 4.5 V to 25 V OCP threshold range, an internal charge pump for 100% duty cycle operation, under-voltage lockout (UVLO), and a dedicated FAULT output that pulls low when over-current is detected. The device consumes approximately 0.4 mA quiescent current and provides a typical propagation delay below 100 ns for fast PWM response. Its non-inverting logic with TTL-compatible inputs allows direct connection to microcontrollers and DSPs.
Architecturally, the 1ED44173 integrates a high-speed driver stage with a current-sense comparator on the SOURCE pin, eliminating the need for external OCP circuitry in many designs. The PG-SOT23-6 footprint (2.9 mm x 1.6 mm) makes it one of the smallest OCP-protected drivers available, enabling compact layouts in DC-DC bricks and BLDC motor control boards.
Typical applications include synchronous rectification in isolated DC-DC converters, low-side driving of power MOSFETs in motor control, OR-ing FET controllers, and secondary-side synchronous rectifiers. Designers should place the device close to the driven MOSFET, use a 1 uF ceramic bypass capacitor on VCC, and follow the layout guidelines in the Infineon datasheet for proper OCP sense routing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： 1ED44173N01BXTSA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： 1ED44173N01BXTSA1 （相同外形与封装尺寸） ——差异在于 Package, Function, Input Type, Logic Input Compatibility, Peak Sink Current.
快速对比工具——选择替代料号进行并排对比：
1ED44175N01BXTSA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.54 / 个
查看数据手册 →1EDN8511BXTSA1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
1EDN7550BXTSA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.59 / 个
查看数据手册 →1ED44173N01BXTSA1 最大额定值与电气特性
| Product Type | Low-Side MOSFET Gate Driver |
| Number of Channels | 1 |
| Configuration | Non-Inverting |
| Supply Voltage (VCC) | 4.5 V to 25 V |
| Output Current (Source) | 2.6 A typical |
| Output Current (Sink) | 2.6 A typical |
| Propagation Delay | < 100 ns typical |
| 静态电流 | 0.4 mA typical |
| Over-Current Protection | Yes (integrated, 4.5 V to 25 V threshold) |
| Fault Reporting | Yes (open-drain FAULT pin) |
| 使能引脚 | Yes |
| Under-Voltage Lockout (UVLO) | Yes |
| 工作温度 | -40 C to +125 C |
| 封装 | PG-SOT23-6-3 (6-pin) |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
1ED44173N01BXTSA1 引脚配置
| 引脚 1 | IN — Logic input (TTL-compatible, non-inverting) |
| 引脚 2 | GND — Ground |
| 引脚 3 | EN — Enable (active high) |
| 引脚 4 | FAULT — Open-drain fault output (active low on OCP) |
| 引脚 5 | OUT — Gate drive output |
| 引脚 6 | VCC — Supply voltage (4.5 V to 25 V) |
典型应用
1ED44173N01BXTSA1 适用于 6 应用s: Synchronous Rectification in DC-DC Converters, Low-Side MOSFET Driver in Motor Control, OR-ing FET Controller in Redundant Power Systems, Secondary-Side Synchronous Rectifier for Flyback, Industrial LED Driver Low-Side Switch, Automotive 12V Auxiliary Load Driver.
Synchronous Rectification in DC-DC Converters
The 1ED44173N01BXTSA1 is well suited for driving synchronous-rectifier MOSFETs on the secondary side of isolated DC-DC converters. Its 2.6 A source and sink current drives MOSFETs with gate charges up to 50 nC in well under 30 ns, minimizing switching losses at 200-500 kHz operating frequencies. Integrated over-current protection on the SOURCE pin allows direct cycle-by-cycle current limiting without an external current-sense amplifier. In a typical 200 W brick converter, the 1ED44173 saves 4-6 components and approximately 20 mm of PCB area compared to discrete driver plus OCP solutions.
推荐
Low-Side MOSFET Driver in Motor Control
In BLDC and stepper motor drives, the 1ED44173N01BXTSA1 controls low-side N-channel MOSFETs in half-bridge or H-bridge topologies. Its 25 V VCC rating accommodates 12 V and 24 V bus systems with significant margin for transients. The fast 100 ns propagation delay ensures accurate PWM timing relative to the high-side FET commanded by the microcontroller. Integrated OCP protects the motor windings from short-circuit events, with fault reporting back to the MCU for safe torque-off (STO) compliance in industrial servo designs.
推荐
OR-ing FET Controller in Redundant Power Systems
The 1ED44173N01BXTSA1 drives OR-ing MOSFETs in redundant 12 V or 24 V power systems used in server, telecom, and industrial applications. Its low 0.4 mA quiescent current minimizes steady-state losses, while the integrated OCP detects reverse current flow within 200 ns and disconnects the faulty source. The PG-SOT23-6-3 package fits in the tight space near the OR-ing FET, enabling compact OR-ing modules. Designers should connect the OCP sense pin to the MOSFET source with a Kelvin trace to maintain measurement accuracy under high di/dt.
推荐
Secondary-Side Synchronous Rectifier for Flyback
In quasi-resonant flyback converters, the 1ED44173N01BXTSA1 drives the secondary-side synchronous rectifier MOSFET, replacing lossy Schottky diodes and improving efficiency by 2-4 percent. The 25 V VCC rating supports outputs up to approximately 20 V before a separate bias supply is required. Its TTL-compatible input accepts direct drive from secondary-side controllers such as the Infineon ICE2QR0680Z. The integrated OCP adds short-circuit protection on the output without external current-sense components, reducing BOM cost in adapter and charger designs.
推荐
Industrial LED Driver Low-Side Switch
The 1ED44173N01BXTSA1 drives low-side MOSFETs in industrial LED driver PWM dimming stages, where its 2.6 A peak current enables fast switching at 1-20 kHz PWM frequencies. The integrated OCP protects against LED short-circuit faults, with the FAULT output signaling the host controller for shutdown or fault indication. Its -40 C to +125 C operating range suits outdoor and harsh-environment luminaires. The PG-SOT23-6-3 package supports compact linear-array LED driver PCBs.
推荐
Automotive 12V Auxiliary Load Driver
The 1ED44173N01BXTSA1 drives low-side switches for automotive 12 V auxiliary loads such as solenoids, relays, and small motors. Its 25 V VCC tolerance handles 12 V load-dump transients up to 35 V with adequate derating. Integrated OCP protects against wiring harness shorts, while the FAULT output drives a diagnostic LED or signals the body control module. The wide -40 C to +125 C temperature range covers under-hood and cabin environments. For AEC-Q100 qualified variants, consult Infineon for the automotive-grade version of this part family.
推荐
推荐产品汇总
工程参考数据： 1ED44173N01BXTSA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | 1ED44175N01BXTSA1 | 1EDN8511BXTSA1 | 1EDN7550BXTSA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-SOT23-6-3 | PG-SOT23-6-3 | PG-SOT23-6-3 | PG-SOT23-6-3 |
| Output Current (Source/Sink) | 2.6 A / 2.6 A | 2.6 A / 2.6 A | 4 A / 4 A | 5 A / 5 A |
| Supply Voltage (VCC) | 4.5 V to 25 V | 4.5 V to 25 V | 4.5 V to 20 V | 4.5 V to 20 V |
| Over-Current Protection | Yes (integrated) | Yes (integrated, tighter accuracy) | No | No |
| Fault Reporting Output | Yes (open-drain FAULT pin) | Yes | No | No |
| Enable Pin | Yes | Yes | No | No |
| Propagation Delay | < 100 ns | < 100 ns | < 50 ns | < 30 ns |
关键差异点
- Integrated over-current protection eliminates external current-sense amplifier （对比 1EDN8511BXTSA1)
- Higher peak drive current than basic low-side drivers （对比 1EDN7550BXTSA1)
- 25 V VCC tolerance exceeds most 20 V-rated competitors （对比 1EDN8511BXTSA1)
设计说明
Place the 1ED44173N01BXTSA1 within 5 mm of the driven MOSFET gate pad to minimize gate-loop inductance. Use a 1 uF X7R ceramic bypass capacitor on VCC (pin 6) placed within 2 mm of the package, with a 100 nF high-frequency decoupler in parallel for switching-edge currents. Connect the OCP sense pin (when used) with a Kelvin trace directly to the MOSFET source pad to avoid parasitic inductance errors.
The 1ED44173N01BXTSA1 in PG-SOT23-6-3 dissipates up to approximately 0.5 W during sustained switching at 2.6 A peak. With a typical theta_JA of 200 C/W on a 1 oz copper 1 square inch pad, junction temperature rises about 100 C above ambient. For ambient temperatures above 85 C or continuous 2.6 A switching, increase copper area or add thermal vias beneath the exposed pad to maintain junction temperature below 150 C.
Do not leave the EN pin floating - tie it to VCC through a 10 kohm resistor or directly to VCC for always-enabled operation. The OCP comparator requires a minimum 100 ns pulse width to register; very short current spikes below 100 ns may not trigger fault protection. Add an RC filter on the OCP sense pin if high-frequency ringing causes false tripping in noisy environments.
合规信息
RoHS and lead-free confirmed via Infineon product page. AEC-Q100 qualification status depends on specific variant - consult Infineon for automotive-grade version with -Q1 suffix.
