2N7002L vs MMBF170LT1 对比
详细并排对比 2N7002L 出自 onsemi 和 MMBF170LT1 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2N7002L | MMBF170LT1 |
|---|---|---|
| 品牌 | onsemi | onsemi |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.03 | $0.09 |
| 晶体管类型 | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 115 mA (Ta) | 500 mA (Ta) |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | — |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max | — |
| Technology | High cell density trench MOSFET | DMOS |
| 安装类型 | Surface Mount | Surface Mount |
| 封装 | SOT-23 (SOT-23-3) | — |
| Configuration | Single FET | — |
| Switching Performance | Fast switching, rugged and reliable | — |
| Gate Drive | 5V logic-level enhancement mode | — |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting | — |
| Manufacturer | onsemi | onsemi (ON Semiconductor) |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant (per onsemi product page) |
| Part Number | — | MMBF170LT1 |
| Drain-Source Voltage (VDSS) | — | 60 V |
| Drain-Gate Voltage (VDGS) | — | 60 Vdc |
| Gate-Source Voltage - Continuous (VGS) | — | ±20 Vdc (per datasheet) |
| Gate-Source Voltage - Non-repetitive (VGSM) | — | ±40 Vpk (tp <= 50 ms) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Total Device Dissipation (PD) | — | 225 mW (Ta, FR-5 board) |
| 工作温度范围 | — | -55 °C to +150 °C (TJ max per datasheet) |
| 封装 / 外壳 | — | SOT-23-3 (TO-236) |
| 引脚数量 | — | 3 |
| AEC-Q101 Qualified | — | Yes (per datasheet) |
| Polarity | — | N-Channel |