CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices
料号： CGD65C055SP2 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.47 | $34.70 |
| 100 | $3.08 | $308.00 |
| 500 | $2.78 | $1,390.00 |
| 1,000 | $2.49 | $2,490.00 |
CGD65C055SP2 概述
A GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor) is a wide-bandgap semiconductor switch in the discrete-semiconductor hierarchy: GaN HEMT -> power transistor -> discrete semiconductor. Compared with silicon MOSFETs, GaN HEMTs offer much lower gate charge, zero reverse-recovery charge, and an order-of-magnitude lower switching loss, enabling higher switching frequencies (hundreds of kHz to MHz) without the efficiency penalty seen in Si. Cambridge GaN Devices (CGD) specialises in normally-off, enhancement-mode GaN with a robust gate interface that does not require a negative rail to keep the device off.
Key differentiating features include an integrated Miller clamp that suppresses false turn-on during fast transients, a wettable-flank BHDFN package for optical-inspection-friendly solder joints, and a thermal pad on the bottom side for direct PCB cooling. The 55 mΩ R_ds(on) at room temperature keeps conduction loss competitive with 600-650 V Si MOSFETs of similar die area, while the lower Qrr and Q_oss translate directly into reduced reverse-conduction loss in hard-switched half-bridges and totem-pole PFC stages.
Typical applications include telecom and server SMPS, on-board chargers for EVs, solar inverters, totem-pole PFC front stages, motor drives, and Class-D audio amplifiers. The 650 V rating provides ample margin over 400 V PFC rails (European rectified mains) and 380 V nominal solar-bus voltages.
When designing with this part, place a tight gate-drive loop (gate driver to gate-return) within 5 mm to minimise parasitic inductance that could otherwise cause Miller-induced dv/dt failures. Use a 0 V off-state gate bias for ICeGaN parts to leverage the genuine zero-volt turn-off specified in the datasheet, and consult the CGD application note on dead-time optimisation for half-bridges.
This page synthesises distributor pricing, drop-in alternative recommendations, and practical design notes not found in the manufacturer datasheet alone, providing a one-stop engineering reference for the CGD65C055SP2.
直接替换替代料： CGD65C055SP2 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： CGD65C055SP2 （相同外形与封装尺寸） ——差异在于 Manufacturer, Package, RoHS Status, Technology.
快速对比工具——选择替代料号进行并排对比：
CGD65A055S2
✅ 直接替换✓ 有现货
$2.85 / 个
查看数据手册 →CGD65C055SP
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
CGD65C055P2
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
CGD65C055SP2 最大额定值与电气特性
| Manufacturer | Cambridge GaN Devices (CGD) |
| Part Number | CGD65C055SP2 |
| 晶体管类型 | N-Channel GaN HEMT (Enhancement Mode, Normally-Off) |
| Drain-Source Voltage (V_DS max) | 650 V |
| Continuous Drain Current (I_D) | 27 A |
| On-Resistance (R_DS(on)) | 55 mΩ |
| Gate Threshold Voltage (V_TH) | 3 V |
| Gate Drive Voltage Range | 9 V to 20 V |
| Gate Turn-Off Voltage | 0 V (genuine 0 V turn-off per ICeGaN) |
| Technology | ICeGaN® GaN-on-Si, enhancement-mode |
| 封装 | BHDFN-9-1 (Bottom-side cooled, wettable flank) |
| 安装类型 | Surface Mount |
| Channel Type | N-Channel |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
CGD65C055SP2 引脚配置
| 引脚 1 | Gate — Gate input, drive 9-20 V on, 0 V off (ICeGaN) |
| 引脚 2 | Kelvin Source — Kelvin source connection for gate-driver return |
| 引脚 3 | Source — Source (power) |
| 引脚 4 | Source — Source (power) |
| 引脚 5 | Source — Source (power) |
| 引脚 6 | Source — Source (power) |
| 引脚 7 | Source — Source (power) |
| 引脚 8 | Source — Source (power) |
| 引脚 9 | Drain — Drain (power, thermal pad electrically connected to drain) |
安全工作区 (estimated from datasheet)
典型应用
CGD65C055SP2 适用于 6 应用s: Server & Telecom SMPS, Totem-Pole PFC Front Stage, Solar / PV Inverter DCDC Stage, EV On-Board Charger PFC Stage, Class-D Audio Amplifier Output Stage, Industrial Motor Drive Inverter.
Server & Telecom SMPS
The CGD65C055SP2's 650 V rating and 55 mΩ R_DS(on) suit 400 V bus server and telecom SMPS designs. Compared with 600 V silicon MOSFETs of similar die area, the GaN HEMT cuts switching loss by 60-70% and eliminates reverse-recovery loss in the high-side device, allowing 100-200 kHz switching frequencies that shrink magnetics by 2-3x. The integrated Miller clamp suppresses dv/dt-induced false turn-on even with the higher dV/dt of GaN. Use the part in the primary-side hard-switched half-bridge, with 9-12 V gate drive and 0 V off-state bias to leverage ICeGaN's genuine zero-volt turn-off and meet 80 Plus Titanium efficiency targets.
推荐
Totem-Pole PFC Front Stage
The CGD65C055SP2 is an excellent choice for hard-switching totem-pole PFC at 65 kHz to 1 MHz. The zero Qrr of the GaN HEMT eliminates the reverse-recovery loss that otherwise forces silicon MOSFETs into slow-switched, bridgeless-PFC topologies. The 27 A continuous current rating supports 3-5 kW PFC stages for server and EV charger applications. Place the gate-driver within 5 mm of the gate pin to minimise parasitic inductance, and consult the Cambridge GaN Devices dead-time optimisation application note to minimise body-diode conduction intervals. Expected efficiency exceeds 99% at 50% load in a 3 kW totem-pole PFC.
推荐
Solar / PV Inverter DCDC Stage
In PV inverter DCDC boost stages the CGD65C055SP2 switches a 380 V nominal solar bus. The 650 V rating provides 70 V margin above the maximum power-point bus voltage. GaN's lower Qoss reduces switching loss in the hard-switched boost, and the BHDFN-9-1 bottom-cooled package simplifies heatsink attachment compared to top-cooled DFN parts. The integrated Miller clamp avoids shoot-through when paired with a high-performance SiC or GaN gate driver. Use 100 kHz to 500 kHz switching to shrink the boost inductor by 4x versus a 20 kHz silicon implementation.
推荐
EV On-Board Charger PFC Stage
The CGD65C055SP2 suits EV on-board charger (OBC) PFC and DCDC stages in the 6.6-22 kW range. Its 650 V rating directly supports 400 V rectified bus rails, and the 27 A current rating parallel-friendly for 11 kW OBCs. Cambridge GaN Devices operates automotive IATF 16949 processes; AEC-Q101 qualification status should be confirmed on the specific automotive-grade part variant. The 55 mΩ R_DS(on) keeps conduction loss manageable across a wide load range, and the 9-20 V gate-drive window simplifies interface with automotive 12 V gate drivers.
推荐
Class-D Audio Amplifier Output Stage
The CGD65C055SP2's low output charge and zero reverse-recovery charge translate directly into lower dead-time distortion in half-bridge Class-D audio amplifiers. The 27 A current rating supports 200-500 W per channel amplifier modules, and the high switching frequency (250 kHz to 1 MHz) shrinks the output LC filter to a small ferrite-and-film combination. Use the ICeGaN gate with a 12 V drive and 0 V off-state; the genuine zero-volt turn-off minimises idle-pop on power-up. Total Harmonic Distortion + Noise (THD+N) below 0.01% is achievable in a 250 W / 4 ohm amplifier at 1 kHz.
推荐
Industrial Motor Drive Inverter
In industrial motor-drive inverters the CGD65C055SP2 enables 100 kHz PWM switching for lower audible noise and higher control bandwidth. The 650 V rating supports 480 V rectified bus rails, and the 27 A current rating fits 5-10 HP inverter modules. The BHDFN-9-1 bottom-side-cooled package couples directly to a heatsink or cold-plate for sustained 27 A operation. Expect 50-70% switching-loss reduction compared with a 600 V silicon IGBT at the same switching frequency, or 2-3x switching frequency at the same loss budget for finer PWM resolution.
推荐
推荐产品汇总
工程参考数据： CGD65C055SP2 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | CGD65A055S2 | CGD65C055SP | CGD65C055P2 |
|---|---|---|---|---|
| Package | BHDFN-9-1 (bottom-cooled, wettable flank) | BHDFN-9-1 - same | BHDFN-9-1 - same | BHDFN-9-1 - same |
| Brand | Cambridge GaN Devices | Cambridge GaN Devices - same | Cambridge GaN Devices - same | Cambridge GaN Devices - same |
| Drain-Source Voltage (V_DS) | 650 V | 650 V | 650 V | 650 V |
| Continuous Drain Current (I_D) | 27 A | 27 A | 27 A | 27 A |
| On-Resistance (R_DS(on)) | 55 mΩ | 55 mΩ | 55 mΩ | 55 mΩ |
| Gate Threshold Voltage | 3 V | 3 V | 3 V | 3 V |
| Integrated Miller Clamp | Yes | Yes | Yes | Yes |
| Integrated Current Sense | Yes (current-sense pin) | No | No | Yes |
关键差异点
- Genuine 0 V turn-off (ICeGaN technology) （对比 Generic depletion-mode GaN cascodes)
- Bottom-side cooled BHDFN-9-1 package with wettable flanks （对比 Standard top-cooled DFN GaN packages)
- Integrated Miller clamp suppresses false turn-on （对比 Discrete 650 V silicon MOSFETs)
设计说明
Minimise the gate-drive loop (gate-driver output to gate pin to source/Kelvin return) to less than 5 mm total length to keep parasitic inductance below 2 nH. A high-dV/dt transition in a GaN HEMT can otherwise cause Miller-induced gate glitches and shoot-through. Use a Kelvin-source connection (pin 2) for the gate-driver return rather than the power source pins to avoid ground bounce. Keep the gate-driver PCB trace on an inner layer or a tight top-layer return path directly above/below it.
Estimated: at 27 A continuous current and 55 mΩ R_DS(on), conduction loss is approximately 40 W. The BHDFN-9-1 bottom-side cooled package couples the drain/thermal pad directly to the PCB bottom copper pour or to a cold-plate. Use at least 2 oz copper on both sides of the PCB in the drain-pad region, and consider thermal vias (12-16 vias in a 0.3 mm pitch) for board-level cooling. For sustained operation above 30 W dissipation, attach a heatsink or cold-plate directly to the bottom pad.
Do not apply a negative gate-bias supply with ICeGaN parts - the genuine 0 V turn-off is sufficient and a negative rail can damage the gate structure. Also ensure the dead-time in half-bridge stages is sufficient to prevent shoot-through but not so long that body-diode conduction causes excessive loss (typical optimum is 30-100 ns depending on load current). Verify the gate-drive slew rate (dV/dt) stays within the datasheet rating of [DATA_NEEDED: max dV/dt], and add a small RC gate resistor (5-15 Ω) for EMI tuning.
合规信息
RoHS compliant per Cambridge GaN Devices product page. AEC-Q101 automotive grade should be confirmed for the specific automotive-grade part variant if needed for automotive designs. Cambridge GaN Devices operates IATF 16949 processes.
