CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices
부품 번호: CGD65C055SP2 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.47 | $34.70 |
| 100 | $3.08 | $308.00 |
| 500 | $2.78 | $1,390.00 |
| 1,000 | $2.49 | $2,490.00 |
CGD65C055SP2 개요
A GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor) is a wide-bandgap semiconductor switch in the discrete-semiconductor hierarchy: GaN HEMT -> power transistor -> discrete semiconductor. Compared with silicon MOSFETs, GaN HEMTs offer much lower gate charge, zero reverse-recovery charge, and an order-of-magnitude lower switching loss, enabling higher switching frequencies (hundreds of kHz to MHz) without the efficiency penalty seen in Si. Cambridge GaN Devices (CGD) specialises in normally-off, enhancement-mode GaN with a robust gate interface that does not require a negative rail to keep the device off.
Key differentiating features include an integrated Miller clamp that suppresses false turn-on during fast transients, a wettable-flank BHDFN package for optical-inspection-friendly solder joints, and a thermal pad on the bottom side for direct PCB cooling. The 55 mΩ R_ds(on) at room temperature keeps conduction loss competitive with 600-650 V Si MOSFETs of similar die area, while the lower Qrr and Q_oss translate directly into reduced reverse-conduction loss in hard-switched half-bridges and totem-pole PFC stages.
Typical applications include telecom and server SMPS, on-board chargers for EVs, solar inverters, totem-pole PFC front stages, motor drives, and Class-D audio amplifiers. The 650 V rating provides ample margin over 400 V PFC rails (European rectified mains) and 380 V nominal solar-bus voltages.
When designing with this part, place a tight gate-drive loop (gate driver to gate-return) within 5 mm to minimise parasitic inductance that could otherwise cause Miller-induced dv/dt failures. Use a 0 V off-state gate bias for ICeGaN parts to leverage the genuine zero-volt turn-off specified in the datasheet, and consult the CGD application note on dead-time optimisation for half-bridges.
This page synthesises distributor pricing, drop-in alternative recommendations, and practical design notes not found in the manufacturer datasheet alone, providing a one-stop engineering reference for the CGD65C055SP2.
드롭인 대체품: CGD65C055SP2 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: CGD65C055SP2 (동일 폼 팩터 및 풋프린트) — 차이점: Manufacturer, Package, RoHS Status, Technology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
CGD65A055S2
✅ 드롭인✓ 재고 있음
$2.85 / 개
데이터시트 보기 →CGD65C055SP
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
CGD65C055P2
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
CGD65C055SP2 최대 정격 & 전기적 특성
| Manufacturer | Cambridge GaN Devices (CGD) |
| Part Number | CGD65C055SP2 |
| 트랜지스터 유형 | N-Channel GaN HEMT (Enhancement Mode, Normally-Off) |
| Drain-Source Voltage (V_DS max) | 650 V |
| Continuous Drain Current (I_D) | 27 A |
| On-Resistance (R_DS(on)) | 55 mΩ |
| Gate Threshold Voltage (V_TH) | 3 V |
| Gate Drive Voltage Range | 9 V to 20 V |
| Gate Turn-Off Voltage | 0 V (genuine 0 V turn-off per ICeGaN) |
| Technology | ICeGaN® GaN-on-Si, enhancement-mode |
| 패키지 | BHDFN-9-1 (Bottom-side cooled, wettable flank) |
| 실장 유형 | Surface Mount |
| Channel Type | N-Channel |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
CGD65C055SP2 핀 구성
| 핀 1 | Gate — Gate input, drive 9-20 V on, 0 V off (ICeGaN) |
| 핀 2 | Kelvin Source — Kelvin source connection for gate-driver return |
| 핀 3 | Source — Source (power) |
| 핀 4 | Source — Source (power) |
| 핀 5 | Source — Source (power) |
| 핀 6 | Source — Source (power) |
| 핀 7 | Source — Source (power) |
| 핀 8 | Source — Source (power) |
| 핀 9 | Drain — Drain (power, thermal pad electrically connected to drain) |
안전 동작 영역 (estimated from datasheet)
일반적인 애플리케이션
CGD65C055SP2 적합 용도: 6 애플리케이션s: Server & Telecom SMPS, Totem-Pole PFC Front Stage, Solar / PV Inverter DCDC Stage, EV On-Board Charger PFC Stage, Class-D Audio Amplifier Output Stage, Industrial Motor Drive Inverter.
Server & Telecom SMPS
The CGD65C055SP2's 650 V rating and 55 mΩ R_DS(on) suit 400 V bus server and telecom SMPS designs. Compared with 600 V silicon MOSFETs of similar die area, the GaN HEMT cuts switching loss by 60-70% and eliminates reverse-recovery loss in the high-side device, allowing 100-200 kHz switching frequencies that shrink magnetics by 2-3x. The integrated Miller clamp suppresses dv/dt-induced false turn-on even with the higher dV/dt of GaN. Use the part in the primary-side hard-switched half-bridge, with 9-12 V gate drive and 0 V off-state bias to leverage ICeGaN's genuine zero-volt turn-off and meet 80 Plus Titanium efficiency targets.
추천
Totem-Pole PFC Front Stage
The CGD65C055SP2 is an excellent choice for hard-switching totem-pole PFC at 65 kHz to 1 MHz. The zero Qrr of the GaN HEMT eliminates the reverse-recovery loss that otherwise forces silicon MOSFETs into slow-switched, bridgeless-PFC topologies. The 27 A continuous current rating supports 3-5 kW PFC stages for server and EV charger applications. Place the gate-driver within 5 mm of the gate pin to minimise parasitic inductance, and consult the Cambridge GaN Devices dead-time optimisation application note to minimise body-diode conduction intervals. Expected efficiency exceeds 99% at 50% load in a 3 kW totem-pole PFC.
추천
Solar / PV Inverter DCDC Stage
In PV inverter DCDC boost stages the CGD65C055SP2 switches a 380 V nominal solar bus. The 650 V rating provides 70 V margin above the maximum power-point bus voltage. GaN's lower Qoss reduces switching loss in the hard-switched boost, and the BHDFN-9-1 bottom-cooled package simplifies heatsink attachment compared to top-cooled DFN parts. The integrated Miller clamp avoids shoot-through when paired with a high-performance SiC or GaN gate driver. Use 100 kHz to 500 kHz switching to shrink the boost inductor by 4x versus a 20 kHz silicon implementation.
추천
EV On-Board Charger PFC Stage
The CGD65C055SP2 suits EV on-board charger (OBC) PFC and DCDC stages in the 6.6-22 kW range. Its 650 V rating directly supports 400 V rectified bus rails, and the 27 A current rating parallel-friendly for 11 kW OBCs. Cambridge GaN Devices operates automotive IATF 16949 processes; AEC-Q101 qualification status should be confirmed on the specific automotive-grade part variant. The 55 mΩ R_DS(on) keeps conduction loss manageable across a wide load range, and the 9-20 V gate-drive window simplifies interface with automotive 12 V gate drivers.
추천
Class-D Audio Amplifier Output Stage
The CGD65C055SP2's low output charge and zero reverse-recovery charge translate directly into lower dead-time distortion in half-bridge Class-D audio amplifiers. The 27 A current rating supports 200-500 W per channel amplifier modules, and the high switching frequency (250 kHz to 1 MHz) shrinks the output LC filter to a small ferrite-and-film combination. Use the ICeGaN gate with a 12 V drive and 0 V off-state; the genuine zero-volt turn-off minimises idle-pop on power-up. Total Harmonic Distortion + Noise (THD+N) below 0.01% is achievable in a 250 W / 4 ohm amplifier at 1 kHz.
추천
Industrial Motor Drive Inverter
In industrial motor-drive inverters the CGD65C055SP2 enables 100 kHz PWM switching for lower audible noise and higher control bandwidth. The 650 V rating supports 480 V rectified bus rails, and the 27 A current rating fits 5-10 HP inverter modules. The BHDFN-9-1 bottom-side-cooled package couples directly to a heatsink or cold-plate for sustained 27 A operation. Expect 50-70% switching-loss reduction compared with a 600 V silicon IGBT at the same switching frequency, or 2-3x switching frequency at the same loss budget for finer PWM resolution.
추천
추천 제품 요약
엔지니어링 참조 데이터: CGD65C055SP2 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | CGD65A055S2 | CGD65C055SP | CGD65C055P2 |
|---|---|---|---|---|
| Package | BHDFN-9-1 (bottom-cooled, wettable flank) | BHDFN-9-1 - same | BHDFN-9-1 - same | BHDFN-9-1 - same |
| Brand | Cambridge GaN Devices | Cambridge GaN Devices - same | Cambridge GaN Devices - same | Cambridge GaN Devices - same |
| Drain-Source Voltage (V_DS) | 650 V | 650 V | 650 V | 650 V |
| Continuous Drain Current (I_D) | 27 A | 27 A | 27 A | 27 A |
| On-Resistance (R_DS(on)) | 55 mΩ | 55 mΩ | 55 mΩ | 55 mΩ |
| Gate Threshold Voltage | 3 V | 3 V | 3 V | 3 V |
| Integrated Miller Clamp | Yes | Yes | Yes | Yes |
| Integrated Current Sense | Yes (current-sense pin) | No | No | Yes |
주요 차별점
- Genuine 0 V turn-off (ICeGaN technology) (vs Generic depletion-mode GaN cascodes)
- Bottom-side cooled BHDFN-9-1 package with wettable flanks (vs Standard top-cooled DFN GaN packages)
- Integrated Miller clamp suppresses false turn-on (vs Discrete 650 V silicon MOSFETs)
설계 노트
Minimise the gate-drive loop (gate-driver output to gate pin to source/Kelvin return) to less than 5 mm total length to keep parasitic inductance below 2 nH. A high-dV/dt transition in a GaN HEMT can otherwise cause Miller-induced gate glitches and shoot-through. Use a Kelvin-source connection (pin 2) for the gate-driver return rather than the power source pins to avoid ground bounce. Keep the gate-driver PCB trace on an inner layer or a tight top-layer return path directly above/below it.
Estimated: at 27 A continuous current and 55 mΩ R_DS(on), conduction loss is approximately 40 W. The BHDFN-9-1 bottom-side cooled package couples the drain/thermal pad directly to the PCB bottom copper pour or to a cold-plate. Use at least 2 oz copper on both sides of the PCB in the drain-pad region, and consider thermal vias (12-16 vias in a 0.3 mm pitch) for board-level cooling. For sustained operation above 30 W dissipation, attach a heatsink or cold-plate directly to the bottom pad.
Do not apply a negative gate-bias supply with ICeGaN parts - the genuine 0 V turn-off is sufficient and a negative rail can damage the gate structure. Also ensure the dead-time in half-bridge stages is sufficient to prevent shoot-through but not so long that body-diode conduction causes excessive loss (typical optimum is 30-100 ns depending on load current). Verify the gate-drive slew rate (dV/dt) stays within the datasheet rating of [DATA_NEEDED: max dV/dt], and add a small RC gate resistor (5-15 Ω) for EMI tuning.
규정 준수 정보
RoHS compliant per Cambridge GaN Devices product page. AEC-Q101 automotive grade should be confirmed for the specific automotive-grade part variant if needed for automotive designs. Cambridge GaN Devices operates IATF 16949 processes.
