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Infineon

CY14B101KA-SP45XI - 1Mb nvSRAM 45ns with RTC | Infineon

料号: CY14B101KA-SP45XI ✓ 量产中
有现货 1-3 个工作日内发货
3 V Vdss 48-SSOP (SOIC 0.300 inch, MO-119 family) Package Yes (full-featured RTC with alarm) Speed nvSRAM (Nonvolatile SRAM) Memory
低至 $18.2 USD / 件
最小起订量: 1 |
价格更新于: 2026-09-14
批量定价
数量 单价 小计
1 $23.99 $23.99
10 $22.5 $225.00
100 $20.8 $2,080.00
500 $19.5 $9,750.00
1,000 $18.2 $18,200.00
ℹ️ 所有价格均以 USD 计价

CY14B101KA-SP45XI 概述

The Infineon CY14B101KA-SP45XI (originally Cypress Semiconductor) is a 1-Mbit (128K x 8) nonvolatile static RAM (nvSRAM) with a full-featured real-time clock (RTC), operating at 3V with a 45 ns access time, housed in a 48-pin SSOP package.

An nvSRAM is a memory IC that combines two functional elements in the same physical cell: a standard SRAM cell for fast read and write operations and a nonvolatile QuantumTrap element that automatically stores SRAM data on power loss. Unlike EEPROM or Flash, nvSRAM supports unlimited SRAM read/write cycles while independent nonvolatile data resides in the QuantumTrap cells, eliminating the write-cycle and wear-out limitations of conventional nonvolatile memories.

Key features include 1-Mbit nonvolatile static RAM organized as 128K x 8, an embedded real-time clock with alarm and backup power capability, automatic STORE and RECALL operations on power failure, and a parallel SRAM interface with 45 ns access time that requires no software protocol overhead. The QuantumTrap technology produces highly reliable nonvolatile storage with immediate, non-blocking store operations. Industrial temperature operation (-40C to +85C, indicated by the I in the ordering code) supports harsh environments.

Technically, the device pairs a fast asynchronous SRAM array with hidden nonvolatile capture cells. On power failure, data is automatically transferred from SRAM to the nonvolatile cells using charge harvested from the decaying supply, requiring no external intervention. On power-up, a RECALL operation restores data to the SRAM array before the device is made available, guaranteeing data integrity through uncontrolled brownouts.

Typical applications include industrial programmable logic controllers (PLCs) storing process state, point-of-sale and transaction terminals buffering data during outages, metering systems logging usage with timestamped RTC entries, and networking equipment retaining configuration tables across power cycles.

A key design consideration: the RTC backup requires a properly sized backup source per the manufacturer datasheet, and designers must respect the STORE cycle endurance and tSTORE timing in power-fail detection circuits.

This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

直接替换替代料: CY14B101KA-SP45XI ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

快速对比工具——选择替代料号进行并排对比:

CY14B101KA-SP25XI

✅ 直接替换
📦 48-SSOP
25 ns access time vs 45 ns (-45% access delay), otherwise identical die, pinout, organization and RTC

📋 参考替代料(不在目录中)

CY14B101KA-SP45XIT

✅ 直接替换
📦 48-SSOP
tape-and-reel packaging variant of the same die; electrically identical (45 ns, 128K x 8, RTC)

📋 参考替代料(不在目录中)

CY14B101MA-SP45XI

✅ 直接替换
📦 48-SSOP
organization 64K x 16 vs 128K x 8 (different bus width), same 1 Mbit density, 45 ns, RTC and package

📋 参考替代料(不在目录中)

CY14B101MA-SP25XI

✅ 直接替换
📦 48-SSOP
64K x 16 organization with faster 25 ns access vs 128K x 8 at 45 ns

📋 参考替代料(不在目录中)

CY14B101KA-SP45XI 最大额定值与电气特性

存储器类型 nvSRAM (Nonvolatile SRAM)
存储容量 1 Mbit
存储组织 128K x 8
Access Time 45 ns
电源电压 3 V
接口 Parallel
Real-Time Clock Yes (full-featured RTC with alarm)
Nonvolatile Technology QuantumTrap
Read/Write Endurance Unlimited SRAM read/write cycles
Automatic Store/Recall Yes, on power failure and power-up
工作温度 -40C to +85C (Industrial)
封装 48-SSOP (SOIC 0.300 inch, MO-119 family)
安装类型 Surface Mount
Pins 48
RoHS 状态 Compliant
Manufacturer Part Number Suffix Decoding SP = 48-SSOP, 45 = 45 ns, X = RoHS, I = Industrial

CY14B101KA-SP45XI 48-ssop (soic 0.300 inch, mo-119 family) 引脚配置指南

CY14B101KA-SP45XI(48-ssop (soic 0.300 inch, mo-119 family) 封装)的引脚配置。 该数字 IC 包含 GPIO、通信接口(UART、SPI、I2C)和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。

CY14B101KA-SP45XI 的 48-ssop (soic 0.300 inch, mo-119 family) 封装引脚图

暂无详细引脚数据: CY14B101KA-SP45XI.

请参阅 数据手册 以查看完整引脚配置。

典型应用

CY14B101KA-SP45XI 适用于 6 应用s: Industrial PLC State Retention, Smart Metering Data Logging, Point-of-Sale and Transaction Terminals, Networking Equipment Configuration Storage, Medical Device Calibration Storage, Security and Access Control Systems.

🏭

Industrial PLC State Retention

Programmable logic controllers must restore counters, latches, and process state instantly after a power interruption. The CY14B101KA-SP45XI fits this role because its QuantumTrap nvSRAM automatically stores the full 128K x 8 array on power failure and recalls it on power-up, with no software protocol and unlimited SRAM write endurance for constantly updating state variables. Placed directly on the microcontroller parallel bus, its 45 ns access time keeps zero-wait-state reads and writes, unlike Flash where logging writes stall the CPU. The industrial -40C to +85C rating matches cabinet environments, and the integrated RTC timestamps fault events without a separate clock chip.

⚡

Smart Metering Data Logging

Electricity, water, and gas meters log usage profiles that must survive outages and tampering. The CY14B101KA-SP45XI provides 1 Mbit of nonvolatile storage with automatic power-fail STORE, so a logged profile is preserved even during brownouts without battery-dependent retention. Its integrated RTC with alarm enables timestamped tariff periods and event records in a single monolithic IC, reducing BOM cost versus a separate RTC plus Flash. Because metering writes small records continuously, the unlimited SRAM write endurance is decisive: Flash-based loggers wear out, while the nvSRAM SRAM plane endures unlimited writes. The 3V supply suits battery-assist meter front ends, and 45 ns access keeps logging overhead negligible.

🖥️

Point-of-Sale and Transaction Terminals

POS terminals must never lose an in-progress transaction when power is cut. The CY14B101KA-SP45XI buffers transaction records in SRAM at full bus speed and commits them to nonvolatile QuantumTrap cells automatically during the power-fail window, guaranteeing recovery without software checkpointing. The 128K x 8 capacity holds thousands of buffered records, and 45 ns parallel access adds no latency to receipt printing or display updates. The RTC timestamps each transaction for audit trails. Compared with battery-backed SRAM, the monolithic solution removes battery replacement service visits, and compared with Flash journals, it eliminates erase-latency stalls during peak checkout loads at retail counters.

🌐

Networking Equipment Configuration Storage

Routers, switches, and industrial gateways store configuration tables, MAC address tables, and firewall rules that must reappear instantly after reboot. The CY14B101KA-SP45XI retains this data through power cycles with automatic RECALL completing before the device is released to the bus, so the CPU reads valid configuration on the first access. The 45 ns asynchronous parallel interface connects directly to network processor buses without controllers or drivers required by SPI Flash. Unlimited write endurance supports frequent dynamic table updates. The integrated RTC provides time-stamping for logs and certificates. Industrial temperature rating suits unventilated telecom cabinets operating from -40C to +85C ambient extremes.

💊

Medical Device Calibration Storage

Infusion pumps, diagnostic instruments, and patient monitors store calibration coefficients, usage counters, and service records that regulatory frameworks require to persist reliably. The CY14B101KA-SP45XI keeps these constants in nonvolatile QuantumTrap cells that survive uncontrolled shutdowns, while day-to-day updates occur in wear-free SRAM. The integrated RTC validates calibration expiry dates and maintenance intervals autonomously. Because calibration data is rewritten at every service event yet read constantly, the unlimited endurance and 45 ns read speed match the access pattern perfectly. The 3V operation integrates into battery-powered medical electronics, and the monolithic single-chip approach simplifies design-history documentation versus multi-chip RTC-plus-EEPROM stacks.

🎥

Security and Access Control Systems

Access controllers and alarm panels must retain credential databases, event logs, and armed states across power failures and tamper events. The CY14B101KA-SP45XI stores this data with automatic nonvolatile STORE on power loss, ensuring no audit gap even during intrusion-caused outages. Its RTC timestamps every badge read and alarm event for forensic review, replacing a discrete RTC IC. The 128K x 8 array holds thousands of credentials, updated at SRAM speed with unlimited endurance as databases change. The 45 ns parallel interface serves fast lookup during peak badge-traffic periods. Industrial temperature tolerance supports outdoor gate controllers from -40C to +85C without derating.

推荐产品汇总

CY14B101KA-SP25XI Faster 25 ns drop-in variant of the same nvSRAM 用于: Industrial PLC State Retention, Point-of-Sale and Transaction Terminals, Medical Device Calibration Storage TLE9461ESXUMA1 Infineon 用于: Industrial PLC State Retention CY14B101KA-SP45XIT Tape-and-reel variant for volume meter production 用于: Smart Metering Data Logging, Security and Access Control Systems TLE42744DV50ATMA1 Infineon 用于: Smart Metering Data Logging NX3225GA-32.4576MHZ NIHON DEMPA KOGYO 用于: Point-of-Sale and Transaction Terminals CY14B101MA-SP45XI 16-bit-wide variant for 16-bit processor buses 用于: Networking Equipment Configuration Storage TLE42662GHTMA2 Infineon 用于: Networking Equipment Configuration Storage NX3225GA-20MHZ-STD-CRG-2 NDK 用于: Medical Device Calibration Storage NX3225GA-12.000MHZ NDK 用于: Security and Access Control Systems
What is the CY14B101KA-SP45XI?
The CY14B101KA-SP45XI is a 1-Mbit (128K x 8) nvSRAM with an integrated real-time clock from Infineon (originally Cypress Semiconductor). It operates at 3V with a 45 ns access time in a 48-SSOP package. According to the manufacturer datasheet, it pairs an SRAM cell with a nonvolatile QuantumTrap cell, supporting unlimited SRAM read/write cycles with automatic STORE and RECALL on power transitions.
How does nvSRAM differ from EEPROM or Flash?
nvSRAM behaves like standard SRAM for reads and writes with unlimited endurance, while nonvolatile storage happens automatically via QuantumTrap capture cells on power failure. EEPROM and Flash require explicit write/erase protocols, block times, and have limited write-cycle endurance (typically 100K-1M cycles). For frequent small data updates, the CY14B101KA eliminates wear-out concerns and write-latency stalls entirely.
What is the difference between CY14B101KA and CY14B101MA?
The CY14B101KA is organized as 128K x 8 (1-Mbit), while the CY14B101MA is organized as 64K x 16 (also 1-Mbit). Both include the same RTC feature and QuantumTrap nvSRAM technology and are documented in the same Infineon datasheet. They are complementary variants in one monolithic IC family, not drop-in replacements for each other due to the different data-bus width.
Can CY14B101KA-SP25XI replace CY14B101KA-SP45XI?
Yes. The CY14B101KA-SP25XI is the faster 25 ns version in the same 48-SSOP package with identical pinout and organization. A faster access-time part is always a valid drop-in replacement for a slower one, since timing constraints are only relaxed. The 25 ns variant typically costs more, so choose it only if the 45 ns version is unavailable or the design margin requires it.
What is the best drop-in replacement for CY14B101KA-SP45XI?
The best drop-in replacement is CY14B101KA-SP25XI from Infineon: same 48-SSOP package, same 128K x 8 organization, same 3V supply and RTC, with a faster 25 ns access time. The CY14B101MA-SP45XI shares the package and RTC but is organized 64K x 16, so it requires bus-width redesign and is not pin-compatible in function.
Is there a cross-brand equivalent for the CY14B101KA-SP45XI?
No verified cross-brand pin-compatible equivalent was found in distributor cross-reference data as of 2026-09-14. Infineon (via the Cypress acquisition) is effectively the sole source for QuantumTrap nvSRAM with RTC in this 48-SSOP footprint. Designers requiring second sourcing should qualify the CY14B101MA variant or redesign around generic battery-backed SRAM solutions.
Where can I buy CY14B101KA-SP45XI and what does it cost?
The CY14B101KA-SP45XI is available from major distributors including Mouser, DigiKey, and LCSC. According to LCSC as of 2026-09-14, the single-unit price is approximately $23.99 USD. Quantity pricing at XAIPART starts at $23.99 (qty 1) and steps down to $18.20 at 1,000 units. Stock varies by distributor; Mouser and DigiKey list the part as actively supplied.
Is CY14B101KA-SP45XI in stock and what is the lead time?
As of 2026-09-14, LCSC lists the CY14B101KA-SP45XI as in stock, and DigiKey marketplace listings show ships-today availability for family variants. Lead time through XAIPART for quantities above distributor stock is typically quoted on request, as this is a specialty nonvolatile memory. Always confirm real-time stock before committing to a build schedule.
What are the key specifications of CY14B101KA-SP45XI engineers should know?
Key specifications: 1 Mbit density organized 128K x 8; 45 ns asynchronous parallel access; 3V supply; integrated RTC with alarm and backup; QuantumTrap nonvolatile technology with automatic STORE/RECALL; unlimited SRAM read/write endurance; -40C to +85C industrial range; 48-SSOP surface-mount package. Per the Infineon datasheet, the device combines nvSRAM and RTC monolithically, eliminating external RTC chips and NVRAM modules.
What does the SP45XI suffix mean on CY14B101KA?
The ordering-code suffix encodes package, speed, compliance, and temperature: SP = 48-pin SSOP package, 45 = 45 ns access time, X = RoHS-compliant lead-free finish, and I = industrial temperature grade (-40C to +85C). Thus CY14B101KA-SP25XI is the same die and package with 25 ns access time, and CY14B101KA-ZS25XI is a 44-pin TSOP II package variant.
Does the CY14B101KA need a battery?
No external battery is required for the nvSRAM data retention; the QuantumTrap nonvolatile cells store data without power. The RTC function, however, requires a backup power source to keep time during main-power outages, as described in the manufacturer datasheet. Design the backup circuit per the datasheet RTC section and verify backup current consumption for your desired timekeeping duration.
Is CY14B101KA-SP45XI suitable for PLC and metering applications?
Yes. The industrial -40C to +85C rating, unlimited SRAM write endurance, automatic power-fail STORE, and integrated RTC make it ideal for PLCs storing process state and smart meters logging timestamped usage. The 45 ns parallel access adds negligible latency to a microcontroller bus, and the automatic RECALL guarantees data restoration after brownouts without software intervention.
Where can I download the CY14B101KA datasheet PDF?
The official datasheet is available from Infineon at infineon.com, titled 'CY14B101KA, CY14B101MA 1-Mbit (128K x 8/64K x 16) nvSRAM with Real Time Clock'. XAIPART also links the PDF from this product page. The datasheet covers the full family including the 48-SSOP (SP) and 44-TSOP II (ZS) packages, both speed grades, and the RTC operating details.
Is CY14B101KA-SP45XI the same as CY14B101KA-SP45XIT?
Electrically and functionally, yes - the T suffix denotes tape-and-reel packaging for high-volume assembly rather than a different die. Both are 1-Mbit 128K x 8 nvSRAMs with RTC, 45 ns access, industrial temperature, in the 48-SSOP package. Choose SP45XIT for automated pick-and-place reels; SP45XI is supplied in tubes or trays for prototyping and low-volume production.
When should I choose the CY14B101KA over a battery-backed SRAM module?
Choose the CY14B101KA when you want a monolithic, solder-down solution with no battery replacement maintenance. Battery-backed SRAM modules risk battery leakage and end-of-life replacement in the field, while QuantumTrap nvSRAM needs no battery for data retention. Only the RTC timekeeping needs backup power. Choose battery-backed SRAM only if you need battery-level backup energy for other subsystems.
How many write cycles can the CY14B101KA endure?
The SRAM portion supports an effectively unlimited number of read and write cycles, since SRAM cells do not wear out. The nonvolatile STORE operation is the only cycling-limited event; per the manufacturer datasheet, the store endurance specification governs how often the automatic or software-initiated STORE can occur over product life. In typical applications, STORE happens only on power failures, so endurance is rarely a constraint.
Is the CY14B101KA RoHS compliant?
Yes. The X in the ordering code CY14B101KA-SP45XI denotes RoHS-compliant, lead-free construction, and the Mouser product listing confirms the NVRAM is RoHS compliant in a SOIC/SSOP 0.300 inch body. This makes the part suitable for EU-market and general lead-free reflow manufacturing. Verify REACH and conflict-minerals statements directly on the Infineon product page for formal compliance documentation.

工程参考数据: CY14B101KA-SP45XI ——对比、设计指导和合规信息。

选型指南

Choose the CY14B101KA-SP45XI when you need 1 Mbit of fast (45 ns), battery-free nonvolatile storage with an integrated RTC on an 8-bit parallel bus in an industrial environment - the typical case for PLCs, meters, POS, and access control. Choose the CY14B101KA-SP25XI (pin-compatible, same package) if your bus timing demands 25 ns access or if the 45 ns grade is out of stock; expect a price premium. Choose the CY14B101MA-SP45XI or -SP25XI only if you have a 16-bit data bus, since the MA organization is 64K x 16. No cross-brand pin-compatible equivalent was found in distributor cross-reference data as of 2026-09-14, so plan single-sourcing risk accordingly. Trade-offs versus Flash: the nvSRAM wins on write endurance and latency but offers lower density and higher unit cost; versus battery-backed SRAM, it wins on maintenance-free retention but needs a backup source for RTC timekeeping only.

与替代料对比

参数 本产品 CY14B101KA-SP25XI CY14B101KA-SP45XIT CY14B101MA-SP45XI CY14B101MA-SP25XI
Package 48-SSOP 48-SSOP - same 48-SSOP - same 48-SSOP - same 48-SSOP - same
Brand Infineon Infineon Infineon Infineon Infineon
Memory Organization 128K x 8 128K x 8 128K x 8 64K x 16 64K x 16
Access Time 45 ns 25 ns 45 ns 45 ns 25 ns
Density 1 Mbit 1 Mbit 1 Mbit 1 Mbit 1 Mbit
Real-Time Clock Yes Yes Yes Yes Yes
Supply Voltage 3 V 3 V 3 V 3 V 3 V
Nonvolatile Technology QuantumTrap nvSRAM QuantumTrap nvSRAM QuantumTrap nvSRAM QuantumTrap nvSRAM QuantumTrap nvSRAM
Temperature Grade Industrial (-40C to +85C) Industrial Industrial Industrial Industrial

关键差异点

  • Integrated RTC in the same monolithic die (对比 CY14B101KA-SP25XI)
  • Unlimited SRAM write endurance with automatic nonvolatile capture (对比 CY14B101MA-SP45XI)
  • No battery needed for data retention (对比 conventional battery-backed SRAM modules)

设计说明

The automatic STORE operation depends on harvesting energy from the decaying VCC rail during power failure. Ensure your power supply decay characteristic allows the board-level bulk capacitance to sustain VCC long enough for the tSTORE duration specified in the manufacturer datasheet. Avoid heavy simultaneous loads on the same rail during shutdown, and place a suitably sized bulk capacitor near the nvSRAM supply pin. Verify the power-fail detection threshold (VSWITCH per datasheet) is above your minimum valid SRAM access voltage so STORE never triggers from a legitimate brownout dip.

The RTC backup input requires a dedicated low-leakage backup source routed away from switching regulator nodes; follow the RTC section of the Infineon datasheet for the backup source sizing and current budget. Keep the address and data bus traces length-matched when the device sits on a fast processor bus; although 45 ns asynchronous access is forgiving, ringing on high-impedance SRAM inputs can cause marginal sampling. Use 10 kHz to 100 kHz range pull-ups on control pins as needed and add 0.1 uF decoupling directly at the VCC pin plus one 10 uF bulk capacitor per power island.

Three frequent mistakes with this family: (1) treating the RTC as battery-backed without providing the required backup source - timekeeping stops without it, though nvSRAM data still survives; (2) violating store-cycle timing by removing power faster than tSTORE, which loses the most recent SRAM writes even though older nonvolatile data is safe; (3) confusing the KA (128K x 8) and MA (64K x 16) order codes when sourcing - they share the 48-SSOP package but are not functionally interchangeable on an 8-bit bus. Always verify the full ordering-code suffix, including speed grade and temperature letter.

Estimated: for a 48-SSOP in a 3V logic system, total power is dominated by bus switching rather than the IC core, so no heatsink or thermal copper is required. Focus layout effort on signal integrity instead: route the parallel address bus as a controlled group with solid ground return, place the nvSRAM within 50 mm of the bus master, and series-terminate (estimated 22 to 33 ohm) long address lines if reflections appear. Keep the RTC crystal traces short and guarded per the datasheet layout guidance for timing accuracy.

合规信息

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
无铅
Yes
无卤
Unknown
冲突矿物
Unknown

RoHS compliance indicated by the X in the ordering code and confirmed in Mouser listing (SOIC 0.300 inch, RoHS compliant, MO-119 family). REACH and conflict-minerals status not stated in provided data.

数据核验日期: 2026-09-14 ——数据由 XAIPART 元器件工程团队核验和整理

相关搜索

CY14B101KA-SP45XI CY14B101KA datasheet Infineon CY14B101KA nvSRAM 1 Mbit nvSRAM with real time clock 45ns 48-SSOP nonvolatile SRAM CY14B101KA PLC state retention memory CY14B101KA vs CY14B101MA difference CY14B101KA-SP25XI drop-in replacement buy CY14B101KA-SP45XI price what is QuantumTrap nvSRAM technology nvSRAM vs battery backed SRAM CY14B101KA-SP45XI pinout 48-SSOP

相关元器件 & 术语

Infineon Cypress Semiconductor CY14B101KA CY14B101KA-SP45XI CY14B101KA-SP25XI CY14B101MA nvSRAM nonvolatile static RAM QuantumTrap technology NVRAM real-time clock RTC 48-SSOP SSOP MO-119 RoHS 1 Mbit 128K x 8 45 ns access time automatic STORE RECALL parallel interface industrial temperature grade memory IC
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