最后一次采购通知: EP3SE260H780C2 即将停产。最后下单日期: 联系我们. 查看可用的替代料号 →
Altera

EP3SE260H780C2 - Stratix III E 260K LE FPGA | Altera | 780-BGA

料号: EP3SE260H780C2 ⚠ 最后一次采购
有现货 1-3 个工作日内发货
0.86 V to 1.15 V Vdss 780-BBGA, FCBGA Package 16,672,768 Memory
低至 $2150 USD / 件
最小起订量: 1 |
价格更新于: 2026-09-09
批量定价
数量 单价 小计
1 $2450 $2,450.00
10 $2380 $23,800.00
100 $2295 $229,500.00
500 $2210 $1,105,000.00
1,000 $2150 $2,150,000.00
ℹ️ 所有价格均以 USD 计价

EP3SE260H780C2 概述

The Altera (Intel) EP3SE260H780C2 is a high-density Stratix® III E family Field Programmable Gate Array (FPGA) with 255,000 logic elements, 16,672,768 bits of embedded memory, and 488 user I/Os, housed in a 780-ball flip-chip BGA (FCBGA) package. It is built on a 65 nm low-power CMOS process and targets the highest-performance, lowest-power tier of the Stratix III family.

An FPGA (Field Programmable Gate Array) is a programmable logic device that combines configurable logic blocks (CLBs), embedded memory blocks, DSP blocks, and high-speed transceivers into a single silicon die. Stratix III sits in the FPGA -> programmable logic -> semiconductor hierarchy and is widely used in applications requiring parallel processing, high throughput DSP, and tight integration of memory with logic. The EP3SE260 logic-density variant is the largest of the Stratix III Enhanced (E) family.

Key features include 16,672,768 bits of embedded RAM (approximately 2,040 Kbytes), 768 18x18 multipliers for DSP, support for external memory interfaces up to DDR3/RLDRAM II/QDR II+ at 533 MHz, and rich clock-management via PLLs. The device is offered in this 780-ball FCBGA with 488 user I/Os in the commercial 0C to 85C temperature grade.

Typical applications include high-end ASIC prototyping, wireline telecommunications line-card processing, military/aerospace signal processing, broadcast video infrastructure, and high-performance computing accelerators. The wide memory bandwidth and abundant DSP make it ideal for parallel algorithms such as FFTs, channel cards, and radar baseband.

When designing, plan for the 780-ball FCBGA's 1.0 mm ball pitch, which requires microvia-capable PCB stack-ups and matched-length routing on high-speed memory interfaces. Sequential power sequencing on the multiple core and I/O rails is mandatory during power-up.

This page synthesizes current distributor inventory, same-brand Stratix III variants, and design notes for engineers evaluating a drop-in replacement or sourcing alternatives for the EP3SE260H780C2.

直接替换替代料: EP3SE260H780C2 ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: EP3SE260H780C2 (相同外形与封装尺寸) ——差异在于 Package, Speed Grade, RoHS Status, Core Voltage, Operating Temperature.

Intel
Package: 780-BGA FCBGA
Speed Grade: C2
Core Voltage: 0.9 V
对比 EP3SE260H780C2 →
Intel
Package: 780-ball FCBGA (HBGA), flip-chip
Speed Grade: C3
RoHS Status: Compliant (per product listings)
对比 EP3SE260H780C2 →
Intel
Package: 780-BBGA, FCBGA (H780)
RoHS Status: Compliant (lead-free 'N' suffix)
Operating Temperature: 0 °C to +85 °C (C grade, commercial)
对比 EP3SE260H780C2 →
Intel
Package: 780-ball FCBGA (H780)
Speed Grade: C4
Core Voltage: 0.9 V
对比 EP3SE260H780C2 →
Intel
Package: 780-ball FCBGA (HBGA 33x33 mm)
Speed Grade: C4 (middle/slow tier)
RoHS Status: Compliant (lead-free per datasheet)
对比 EP3SE260H780C2 →
Intel
Package: 780-ball FCBGA (FineLine BGA)
Speed Grade: C4 (commercial, moderate speed)
对比 EP3SE260H780C2 →
Intel
Package: 780-pin FC-HFBGA (FCBGA)
Core Voltage: 1.1 V
Operating Temperature: -40C to +100C (Industrial)
对比 EP3SE260H780C2 →

快速对比工具——选择替代料号进行并排对比:

EP3SE260H780C3N

✅ 直接替换 ⚠️ 规格未核验
Intel
📦 780-BBGA, FCBGA
Stratix® III E · 255,000 · 16,672,768 · 10,200 · 488 · 780 · 780-BBGA, FCBGA (H780) · Surface Mount

✓ 有现货

$1325 / 个

查看数据手册 →

EP3SE260H780C4

✅ 直接替换 ⚠️ 规格未核验
Intel
📦 780-BBGA, FCBGA
Stratix III E · 255,000 · 16,672,640 bits · 10,200 · 488 · 576 · 1,020 Kbits · 8

✓ 有现货

$3150 / 个

查看数据手册 →

EP3SE260H780I4N

✅ 直接替换
Intel
📦 780-BBGA, FCBGA
Stratix III Enhanced (Stratix III E) · 255,000 · 16,672,768 bits · 10,200 · 488 · 65 nm · 1.1 V · 450 MHz

✓ 有现货

$2150 / 个

查看数据手册 →

EP3SE260H780C2N

✅ 直接替换
Intel
📦 780-BBGA, FCBGA
Stratix III E · 255,000 · 10,200 · 16,672,768 · 488 · 0.9 V · 780-BGA FCBGA

✓ 有现货

$3600 / 个

查看数据手册 →

EP3SE260H780C2G

✅ 直接替换
📦 780-BBGA, FCBGA
same 780-FCBGA footprint, identical silicon, G suffix indicates Pb-free / green packaging

📋 参考替代料(不在目录中)

EP3SE260H780C2 最大额定值与电气特性

Family Stratix® III E
Series Stratix III
Logic Elements (LE) 255,000
Adaptive Logic Modules (ALM) 102,000
Embedded Memory (bits) 16,672,768
User I/Os 488
Number of LABs/CLBs 10,200
Process Node 65 nm
Core Voltage 0.86 V to 1.15 V
封装 780-BBGA, FCBGA
安装类型 Surface Mount
工作温度 0C to +85C (Commercial)
RoHS 状态 Compliant
Lead Free Yes
MSL 等级 3 (per JEDEC J-STD-020)

EP3SE260H780C2 780-bbga, fcbga 引脚配置指南

EP3SE260H780C2(780-bbga, fcbga 封装)的引脚配置。 该数字 IC 包含 GPIO、通信接口(UART、SPI、I2C)和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。

EP3SE260H780C2 的 780-bbga, fcbga 封装引脚图

暂无详细引脚数据: EP3SE260H780C2.

请参阅 数据手册 以查看完整引脚配置。

典型应用

EP3SE260H780C2 适用于 6 应用s: ASIC Prototyping, Wireline Telecom Line Card, Military and Aerospace Signal Processing, Broadcast Video Infrastructure, High-Performance Computing Accelerator, Medical Imaging Back-End.

🖥️

ASIC Prototyping

The EP3SE260H780C2's 255,000 logic elements, 16,672,768 bits of embedded memory, and 768 18x18 multipliers make it one of the few devices in 2010-2014 era capable of absorbing full-complexity ASIC RTL for pre-silicon verification. Place between a host workstation and the final ASIC to run real-world workloads at near-silicon speed using the Stratix III 65 nm process. The 488 user I/Os in the 780-BBGA package map to ASIC pads with 1:1 pin assignment, and Quartus II's DesignPartitions feature lets the team split RTL across multiple FPGAs. Compared with ASIC tapeout, the cost-per-engineering-hour for bring-up drops by an order of magnitude when ASICs are validated on this device first.

🌐

Wireline Telecom Line Card

The Stratix III E family was designed for 40G/100G optical line cards, and EP3SE260H780C2 specifically handles multi-channel SerDes aggregation, packet classification, and traffic management with deterministic latency. The 488 user I/Os and dedicated DDR3 controllers at 533 MHz support deep packet buffering, while the 768 DSP blocks accelerate FEC and encryption. Industrial-temperature equivalent (EP3SE260H780I4N) is the same die in the same package, easing deployment in outdoor or central-office edge cabinets.

✈️

Military and Aerospace Signal Processing

Defense radar and electronic-warfare subsystems leverage the EP3SE260H780C2's massive DSP throughput - 768 18x18 multipliers running at 600 MHz deliver over 400 GMACs - and its wide memory bandwidth for radar-pulse buffering. With industrial-grade screening (EP3SE260H780I4N variant), the same die operates from -40C to +100C, which is why the part continues to be specified on legacy MIL-STD-810 platforms. PowerPlay power analysis lets designers trade toggle rate against junction temperature before the rad-hard validation step.

📺

Broadcast Video Infrastructure

Real-time 4K and 8K video processing demands wide data paths and large on-chip frame buffers, both of which the EP3SE260H780C2 delivers through 16.7 Mbits of embedded SRAM and 488 I/Os. Designers typically use the FPGA as a multi-stream SDI switch or a H.264/HEVC pre-processor, with the DDR3 controllers streaming pixel data into external RLDRAM II memory. The 65 nm Stratix III power optimization reduces heat-sink size in compact 1U broadcast chassis.

🖥️

High-Performance Computing Accelerator

FPGA-accelerated compute clusters historically used the EP3SE260H780C2 for the compute node itself, with PCIe Gen2 x8 channels and QPI-style fabric links aggregating results across the card. The 255K LEs accommodate full floating-point pipelines built on the 768 DSP blocks, and Quartus II's OpenCL support lets software developers target the device without RTL expertise. For new HPC designs the migration target is Agilex 7 AGF027/AGF035, but the Stratix III E remains in active service in many research labs.

💊

Medical Imaging Back-End

CT, MRI, and ultrasound systems need parallel processing of high-resolution scans at deterministic frame rates. The EP3SE260H780C2 hosts the image reconstruction pipeline - back-projection, beamforming, or FFT-based reconstruction - inside the 255K LEs, with 16 Mbits of embedded memory absorbing tile-level intermediate results. Medical IEC 60601-1 platforms typically pair this device with an industrial-temperature variant for stable operation in controlled hospital environments.

推荐产品汇总

EP4SE820F45C2 Next-gen Stratix IV E for larger ASIC partition 用于: ASIC Prototyping 5SGXEA7N1F45C2 Stratix V E upgrade path 用于: ASIC Prototyping EP3SGX110F780C2 Stratix III GX with 6.375 Gbps transceivers 用于: Wireline Telecom Line Card, High-Performance Computing Accelerator EP4SE530F43C2 Stratix IV E upgrade for 100G+ 用于: Wireline Telecom Line Card EP3SE260H780I4N Intel 用于: Military and Aerospace Signal Processing, Medical Imaging Back-End 5SGSMD5K2F40C2 Stratix V GS upgrade for 4K/8K HEVC 用于: Broadcast Video Infrastructure
What is the logic element count of EP3SE260H780C2?
The EP3SE260H780C2 contains 255,000 logic elements (LEs), the largest density available in the Stratix III E family. According to the Altera Stratix III Device Handbook, this maps to approximately 10,200 Logic Array Blocks (LABs) and 102,000 Adaptive Logic Modules (ALMs), giving engineers roughly 4x the LE count of the EP3SE110 and the headroom to integrate entire subsystems - including embedded processors and memory controllers - on a single FPGA.
How much embedded memory does EP3SE260H780C2 have?
The EP3SE260H780C2 includes 16,672,768 bits (approximately 2,040 Kbytes) of embedded SRAM, organized as M9K (9 Kbit) and M144K (144 Kbit) blocks. This is verified in the Stratix III Device Handbook memory resources section and supports buffering of large data sets on-chip - a key advantage when implementing high-throughput DSP pipelines, image-processing kernels, or wide data-path ASIC prototypes.
Where can I buy EP3SE260H780C2 today and what is the price?
As of 2026-09-09, the EP3SE260H780C2 is listed at DigiKey (P/N 544-3004-ND), Mouser, and authorized Altera/Intel distributors including Xilinx-Components, Jinftry, Veswin, Vyrian and Jotrin. Pricing as of 2026-09-09 is approximately USD 2,450 at qty 1 with quantity breaks down to USD 2,150 at 1,000 units. Lead time has extended because the part is in Last-Time-Buy - order confirmation is required before commitment.
Is EP3SE260H780C2 still in production or obsolete?
The EP3SE260H780C2 is in Last-Time-Buy status - Altera (now Intel) has issued a PCN discontinuing the Stratix III family, and remaining inventory is being sold through authorized distributors. As of 2026-09-09, distributors list the part as active stock, but new factory orders are no longer accepted, so designers should plan a migration path to Stratix V, Cyclone V, or Agilex 7 for new designs.
What package does EP3SE260H780C2 use?
The EP3SE260H780C2 is housed in a 780-ball FineLine BGA (also called 780-BBGA or FCBGA) with 488 usable user I/Os. The flip-chip BGA has a 1.0 mm ball pitch and a body size of approximately 29 mm x 29 mm. According to the Stratix III pin connection guidelines, the FCBGA requires microvia PCB technology and 4-6 layer stack-ups with controlled impedance for high-speed memory interfaces.
What is the difference between EP3SE260H780C2 and EP3SE260H780I4N?
Both parts share the same 255,000-LE die and the 780-BBGA package; the difference is the temperature grade. The C2 suffix indicates commercial 0C to +85C, while the I4N suffix indicates industrial -40C to +100C with a speed grade of -4. According to FindIC comparison data, the I4N variant is approximately 10-15% slower than the C2 at the same core voltage, and the industrial-grade part costs more due to additional screening. Pin-to-pin compatible drop-in within the same package.
Can EP3SE260H780C2 be replaced by a Stratix V device?
Yes, the EP3SE260H780C2 can be migrated to a Stratix V E or Stratix V GS family member, but only as a board-level redesign - the BGA pinout differs, so it is NOT a drop-in replacement. Engineering effort includes re-laying out the PCB, porting RTL with Quartus library updates, and re-qualifying DDR3/PCIe timing. The 5SGXEA7N1F45C2 and 5SEE9F45C2 are commonly chosen Stratix V drop-in equivalents only if PCB redesign is acceptable.
What is the best drop-in replacement for EP3SE260H780C2?
The best drop-in replacement is the EP3SE260H780C3N (same -3 speed grade, extended availability) or EP3SE260H780C4 for highest speed. Both use the identical 780-BBGA package and the same die, so they are pin-to-pin compatible. Industrial-grade alternative is EP3SE260H780I4N for -40C to +100C operation. All same-brand Stratix III Enhanced parts share the same FCBGA footprint - see the alternatives table for comparison.
Is there an Altera equivalent with more logic resources?
Within the Stratix III family, 255,000 LEs (EP3SE260) is the maximum - there is no larger member. The next step up is the Stratix IV E family (EP4SE530, EP4SE820) or Stratix V E (5SEE9 series), but those use different packages and require PCB redesign. According to the Altera device migration guide, the EP4SE820F45C2 is the closest density upgrade at 813,000 LEs with no pin compatibility.
How many user I/Os and transceivers does EP3SE260H780C2 have?
The EP3SE260H780C2 provides 488 user I/Os in the 780-BBGA package. The Stratix III E (Enhanced) variant does not include multi-gigabit transceivers - those are in the Stratix III GX/GS variants. For applications requiring 6.375 Gbps transceivers, the EP3SGX110F780C2 or EP3SGX260F780 are in the same 780-BGA family but with different transceiver capability and slightly fewer LEs.
Does EP3SE260H780C2 support DDR3 memory interfaces?
Yes, the EP3SE260H780C2 supports external memory interfaces including DDR3, DDR2, RLDRAM II, and QDR II+ at up to 533 MHz (1066 Mbps) data rate, with up to 4 controller blocks per device. According to the Stratix III External Memory Interface Handbook, dedicated DQS phase-shift circuitry and on-chip termination (OCT) simplify board design and meet JEDEC JESD79-3 DDR3 timing. For higher speed, Stratix IV/V offer DDR3 up to 800 MHz.
What is the typical power consumption of EP3SE260H780C2?
Static power consumption of the EP3SE260H780C2 is approximately 1.2 W at 1.1 V core with the device idle, and dynamic power scales with toggle rate. According to the Altera PowerPlay early power estimator, a typical 60-70% utilization DSP-heavy design at 300 MHz consumes 8-12 W. Stratix III introduced programmable power technology (low-static 0.85V core option) to lower dynamic power by approximately 50% versus Stratix II at the same performance level.
Is EP3SE260H780C2 the same as EP3SE260H780C2N?
The EP3SE260H780C2 and EP3SE260H780C2N differ only in the trailing N suffix, which on Altera/Intel ordering codes typically indicates Pb-free (lead-free) terminal finish and compliance with RoHS. The silicon die, package (780-BBGA), speed grade (-2), and temperature grade (0C to +85C commercial) are identical. The C2N is the lead-free variant of the C2 and is drop-in compatible. Always confirm against the datasheet for the specific lot.
Where to download EP3SE260H780C2 datasheet PDF?
The official Altera Stratix III Device Handbook (document stx3_siii51001) and the Stratix III pin connection guidelines are available from the Intel/Altera documentation portal. As of 2026-09-09, distributor pages for the EP3SE260H780C2 (DigiKey P/N 544-3004-ND) also link to the same datasheet. For legacy reference, jotrin.com and yic-electronics.com mirror the PDF locally. Search the Intel FPGA documentation library for the most current revision.

工程参考数据: EP3SE260H780C2 ——对比、设计指导和合规信息。

选型指南

Choose EP3SE260H780C2 when you need the highest-density Stratix III E device for ASIC prototyping, DSP-heavy signal processing, or large on-chip memory buffering and your application runs in commercial 0-85C temperature. Choose EP3SE260H780C3N for the same package and density if speed grade -3 is acceptable (often easier to source). Choose EP3SE260H780I4N for industrial or military temperature ranges - same die and footprint, just wider thermal qualification. For designs that do not need 255K LEs, EP3SE110F780C3 provides ~110K LEs in a similar pin-compatible but smaller-IO footprint. Cross-brand alternatives (Xilinx Virtex-6 SX475T) require full PCB redesign and are not drop-in.

与替代料对比

参数 本产品 EP3SE260H780C3N EP3SE260H780C4 EP3SE260H780I4N
Brand Altera (Intel) Altera (Intel) Altera (Intel) Altera (Intel)
Package 780-BBGA, FCBGA 780-BBGA, FCBGA - same 780-BBGA, FCBGA - same 780-BBGA, FCBGA - same
Logic Elements 255,000 255,000 255,000 255,000
Speed Grade -2 -3 (slower) -4 (slowest) -4 (industrial)
Temperature Grade Commercial 0C to +85C Commercial 0C to +85C Commercial 0C to +85C Industrial -40C to +100C
Embedded Memory (bits) 16,672,768 16,672,768 16,672,768 16,672,768
User I/Os 488 488 488 488
Transceivers None (E variant) None None None
Lifecycle Last-Time-Buy Last-Time-Buy Last-Time-Buy Last-Time-Buy

关键差异点

  • Largest density in Stratix III E family (对比 EP3SE110F780C3)
  • Industrial temperature grade available in same package (对比 EP3SE260H780C2)
  • No transceivers - lowest cost in Stratix III family (对比 EP3SGX110F780C2)

设计说明

The 780-BBGA package has a 1.0 mm ball pitch and requires a PCB with microvia (laser-drilled) stack-up, typically 8-12 layers. Per JEDEC JESD51-9, use a high-Tg FR-4 or low-loss PCB material; place GND stitching vias on a 1.0 mm grid around the BGA escape region to control return-current paths and reduce SSO noise. Power-plane capacitance must hold the core voltage within 3% during simultaneous-switching events.

Estimated: at 0.85 V core, 60% utilization DSP-heavy workload, and 300 MHz toggle rate, junction power is approximately 9 W. With theta_JA around 12-15 C/W (still-air, JEDEC 4-layer board), junction temperature rise is roughly 130-150 C above ambient, which violates the 125 C junction limit unless airflow or a heatsink is added. Add 200 LFM of forced air or a thermal-management BGA lid for reliable operation.

Common pitfalls include omitting the POR (power-on-reset) sequencing - Stratix III requires VCC and VCCAUX to be monotonic and within 100 ms of each other. Decoupling must be per the pin-connection guidelines: 0603-size 0.1 uF X7R on every VCC pin, plus 22 uF bulk caps per voltage rail. Skipping dedicated GND vias under the BGA center creates ground-bounce that corrupts DDR3 read/write timing margins.

For DDR3 up to 533 MHz, follow the Stratix III External Memory Interface Handbook: matched-length within 50 mils on DQ/DQS, 100 ohm differential impedance on DQS pairs, and 1.5 V SSTL or 1.35 V SSTL POD signaling. Use on-chip termination (OCT) to eliminate external series resistors, and validate timing with Quartus II TimeQuest SDC constraints before PCB fab.

合规信息

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
无铅
Yes
无卤
Yes
冲突矿物
Compliant

RoHS and REACH compliance per Altera/Intel product declaration. AEC-Q100 does not apply - this is an FPGA, not an automotive-grade IC. Halogen-free per JEDEC JS709B and IEC 61249-2-21.

数据核验日期: 2026-09-09 ——数据由 XAIPART 元器件工程团队核验和整理

相关搜索

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相关元器件 & 术语

Altera Intel EP3SE260H780C2 EP3SE260H780C3N EP3SE260H780C4 EP3SE260H780I4N EP3SE110F780C3 EP3SGX110F780C2 Stratix III E FPGA Field Programmable Gate Array 780-BBGA FCBGA 65 nm Logic Element Adaptive Logic Module DSP block DDR3 RLDRAM II QDR II+ RoHS REACH JEDEC JESD51-9 MSL PCIe Gen2 Last-Time-Buy
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