IPD200N15N3GATMA1 - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon
料号： IPD200N15N3GATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.7 | $2.70 |
| 10 | $2.4 | $24.00 |
| 100 | $2.05 | $205.00 |
| 500 | $1.75 | $875.00 |
| 1,000 | $1.5 | $1,500.00 |
IPD200N15N3GATMA1 概述
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or convert energy in power electronics. N-channel MOSFETs are the dominant choice for low-side and high-side switching in DC-DC converters, motor drives, and load switches because their majority-carrier conduction yields lower conduction losses than equivalent bipolar transistors. The IPD200N15N3GATMA1 sits within the broader Infineon OptiMOS 3 family, which targets 100 V-300 V applications where low gate charge, low RDS(on), and robust avalanche capability are essential.
Key features include a logic-level compatible gate threshold, integrated ESD protection on the gate, low Qg and Qgd for fast switching, and an optimized body diode for hard-commutated topologies. The 20 mOhm max RDS(on) at VGS=10 V and 150 V VDS rating provide substantial design margin for 48 V telecom, 80 V industrial bus, and battery protection applications. The device is rated for operation from -55 C to +175 C junction temperature, enabling deployment in harsh environments.
The OptiMOS 3 process uses a trench gate structure that maximizes channel density per unit silicon area, balancing conduction and switching losses. Compared with planar MOSFETs of similar rating, the IPD200N15N3GATMA1 exhibits lower gate charge (Qg) and reduced output capacitance (Coss), making it suitable for high-frequency synchronous rectification in switched-mode power supplies where every switching cycle contributes to total loss.
Typical applications include synchronous rectification in 48 V telecom DC-DC converters, hot-swap and OR-ing controllers in server power distribution, motor drive half-bridges in industrial automation, battery management protection FETs in 96 V e-mobility packs, and high-efficiency load switches in solar power optimizers. The DPAK package is also reflow-solder compatible with standard lead-free SMT processes.
When designing with this part, pay attention to gate-drive voltage (10 V VGS recommended for full RDS(on) spec), keep the source lead parasitic inductance below 5 nH for clean switching waveforms, and verify that peak drain current at the operating temperature does not exceed the safe operating area. Use a gate-source resistor of 10-100 kOhm to prevent unwanted turn-on from dv/dt-induced Miller coupling.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes drawn from the Infineon datasheet, helping engineers move from component selection to validated BOM faster than scanning distributor catalogs alone.
直接替换替代料： IPD200N15N3GATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IPD200N15N3GATMA1 （相同外形与封装尺寸） ——差异在于 Package, Drain-Source Voltage (VDS), FET Type, Technology.
快速对比工具——选择替代料号进行并排对比：
IPD200N15N3G
✅ 直接替换📋 参考替代料（不在目录中）
IPD200N15N3GBTMA1
✅ 直接替换📋 参考替代料（不在目录中）
IPD320N20N3GATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$1.34 / 个
查看数据手册 →NVD5867NLT4G
✅ 直接替换📋 参考替代料（不在目录中）
SUD50N15-4P-E3
✅ 直接替换📋 参考替代料（不在目录中）
IPD200N15N3GATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Part Number | IPD200N15N3GATMA1 |
| Technology | OptiMOS 3 (trench) |
| 晶体管类型 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID, TC=25C) | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | 20 mOhm |
| Power Dissipation (PD, TC=25C) | 150 W |
| 工作结温 | -55 C to +175 C |
| 封装 | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount |
| 引脚数量 | 3 (Gate, Drain, Source) |
| MSL 等级 | 1 |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
IPD200N15N3GATMA1 引脚配置
| 引脚 1 | Gate — Gate control input; drive with 10 V for full RDS(on) specification |
| 引脚 2 | Drain — Drain terminal; electrically connected to the metal tab/backside |
| 引脚 3 | Source — Source terminal; reference for gate drive |
安全工作区 (DC)
典型应用
IPD200N15N3GATMA1 适用于 7 应用s: 48V Telecom DC-DC Synchronous Rectifier, Server Hot-Swap / OR-ing Controller Switch, Industrial Motor Drive Half-Bridge, E-Mobility Battery Pack Protection FET, Solar Power Optimizer Bypass Switch, High-Current DC Load Switch, Telecom Power OR-ing Diode Replacement.
48V Telecom DC-DC Synchronous Rectifier
The IPD200N15N3GATMA1 is well suited as the low-side synchronous rectifier in 48 V input telecom DC-DC converters where it must drop 30-60 V at 20-40 A with minimal conduction loss. Its 20 mOhm RDS(on) at VGS=10 V keeps conduction loss around 16-32 W at full load (I^2 x RDS(on) estimate), and the low Qg of OptiMOS 3 minimizes switching loss at 100-200 kHz operation. Compared with older planar 150 V MOSFETs, the IPD200N15N3GATMA1 reduces rectifier loss by approximately 30-40% per Infineon's published FOM data. Place it on the secondary side of an isolated full-bridge or push-pull topology with a 10 V gate drive from the controller's synchronous output.
推荐
Server Hot-Swap / OR-ing Controller Switch
The IPD200N15N3GATMA1 functions as the main pass-FET or OR-ing FET in 48 V server power distribution where it must carry 30-50 A continuously with low voltage drop. At 40 A continuous, the device dissipates about 32 W (I^2 x RDS(on) estimate), manageable on a DPAK footprint with 1-2 square inches of copper pour. Its 150 V VDS rating provides substantial transient margin for load-step events and inductive kickback. Use a hot-swap controller IC to slowly ramp VGS via gate-source resistor network during insertion, preventing inrush current and connector arcing.
推荐
Industrial Motor Drive Half-Bridge
In industrial motor drive half-bridges at 48-80 V bus, the IPD200N15N3GATMA1 serves as either the high-side or low-side switch in PWM-driven H-bridge configurations for 1-3 kW BLDC or stepper motors. Its 50 A continuous current and 150 V rating give design margin for the L x di/dt voltage spikes during PWM transitions. The OptiMOS 3 trench process provides robust avalanche energy for unclamped inductive switching events, critical when motor windings generate kickback. Drive the gate from a dedicated half-bridge driver such as IRS2005STRPBF with bootstrap supply for the high side.
推荐
E-Mobility Battery Pack Protection FET
The IPD200N15N3GATMA1 is suitable as the discharge or charge protection FET in 60-96 V e-mobility battery packs for e-bikes, e-scooters, and light electric vehicles. Its 150 V VDS rating covers 96 V nominal packs (with cells going up to 4.2 V x 24S = 100.8 V fully charged). The 50 A continuous current supports pack discharge currents of 30-40 A continuous with peak capability during acceleration. The body diode can handle regenerative braking current spikes, and the rugged OptiMOS 3 process tolerates short-circuit events during fault conditions.
推荐
Solar Power Optimizer Bypass Switch
In solar power optimizers operating at panel string voltages up to 100-120 V, the IPD200N15N3GATMA1 acts as the bypass switch that reroutes current around shaded or faulty panel sections. Its 150 V VDS rating provides 25-50% margin over typical 100 V optimizer bus voltages. The 20 mOhm RDS(on) keeps bypass conduction loss under 10 W at 20 A continuous. The low thermal resistance of the DPAK package allows direct PCB mounting without external heatsinking in sealed optimizer enclosures.
推荐
High-Current DC Load Switch
The IPD200N15N3GATMA1 functions as a high-current DC load switch in industrial automation, test equipment, and battery-powered systems where it must interrupt 20-40 A loads at up to 100 V. The 150 V rating handles typical 48-96 V industrial bus voltages with safety margin. Use a dedicated gate driver with controlled turn-off to limit dv/dt and reduce inductive kickback. Add a TVS diode across drain-source for inductive loads to clamp turn-off transients below the 150 V VDS maximum.
推荐
Telecom Power OR-ing Diode Replacement
The IPD200N15N3GATMA1 replaces traditional Schottky OR-ing diodes in redundant -48 V telecom power systems, where two or more rectifiers feed a common bus. As a MOSFET OR-ing switch, it drops only 50-200 mV at 30 A (vs 400-600 mV for a Schottky), reducing dissipation from 12-18 W (Schottky estimate) to 1.5-6 W (MOSFET estimate). The 150 V VDS rating comfortably exceeds the -48 V bus plus transient surges. Use a controller IC with VDS sensing to detect reverse current and fast gate turn-off within 1-2 microseconds.
推荐
推荐产品汇总
工程参考数据： IPD200N15N3GATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IPD200N15N3G | IPD200N15N3GBTMA1 | IPD320N20N3GATMA1 | NVD5867NLT4G | SUD50N15-4P-E3 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | DPAK (TO-252) - same footprint | TO-252 (DPAK) - same footprint |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 150 V | 200 V | 150 V | 150 V |
| Continuous Drain Current (ID) | 50 A | 50 A | 50 A | 34 A | 33 A | 50 A |
| On-Resistance RDS(on) max | 20 mOhm | 20 mOhm | 20 mOhm | 32 mOhm | 30 mOhm | 40 mOhm |
| Technology | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 3 (trench) | Trench | Trench |
| Power Dissipation (TC=25C) | 150 W | 150 W | 150 W | 150 W | 100 W | 125 W |
| Junction Temperature Range | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
关键差异点
- 40% lower RDS(on) and 45% improved FOM vs prior generation （对比 Infineon IPD200N15N3G (same part number base))
- Higher continuous current rating in DPAK （对比 onsemi NVD5867NLT4G)
- Lower RDS(on) than comparable Vishay part （对比 Vishay SUD50N15-4P-E3)
设计说明
Estimated: At ID=30 A continuous and RDS(on)=20 mOhm, the IPD200N15N3GATMA1 dissipates approximately 18 W of conduction loss (I^2 x RDS(on)). The DPAK package has a typical junction-to-ambient thermal resistance of 50-62 C/W on a 1-square-inch copper pour (per Infineon DPAK thermal data). Without additional heatsinking, this results in a 90-110 C junction temperature rise, so the operating ambient should be limited to 60-65 C for reliable long-term operation. Add thermal vias under the drain tab to inner copper planes for improved heat spreading.
Keep the gate-drive loop area minimal by placing the gate resistor (10-100 Ohm) and gate-driver IC within 5-10 mm of the gate pin. The high-current drain-source loop should be the largest loop on the PCB; route input/output bulk capacitors to minimize this loop inductance. For switching frequencies above 100 kHz, use a 4-layer PCB with dedicated ground and power planes to contain switching noise and prevent ground bounce.
Do not operate the IPD200N15N3GATMA1 above 80% of its 150 V VDS rating (i.e., 120 V) for continuous operation to provide transient margin. Use a TVS diode rated for 100-120 V working voltage across drain-source when switching inductive loads. The gate-source threshold (VGS(th)) is typically 2-4 V; do not use logic-level (3.3 V) drive directly without a charge pump or bootstrap, as this may not fully enhance the device and can cause excessive conduction loss.
合规信息
RoHS and lead-free compliant per Infineon product page. Not AEC-Q100 qualified - check IPD200N15N3GATMA1 automotive variant if needed.
