IPD200N15N3GATMA1 - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon
MPN: IPD200N15N3GATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.7 | $2.70 |
| 10 | $2.4 | $24.00 |
| 100 | $2.05 | $205.00 |
| 500 | $1.75 | $875.00 |
| 1,000 | $1.5 | $1,500.00 |
Drop-in alternatives for IPD200N15N3GATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPD200N15N3G
β Drop-Inπ Reference alternative (not in catalog)
IPD200N15N3GBTMA1
β Drop-Inπ Reference alternative (not in catalog)
IPD320N20N3GATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$1.34 / Unit
View Datasheet βNVD5867NLT4G
β Drop-Inπ Reference alternative (not in catalog)
SUD50N15-4P-E3
β Drop-Inπ Reference alternative (not in catalog)
IPD200N15N3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPD200N15N3GATMA1 |
| Technology | OptiMOS 3 (trench) |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID, TC=25C) | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | 20 mOhm |
| Power Dissipation (PD, TC=25C) | 150 W |
| Operating Junction Temperature | -55 C to +175 C |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IPD200N15N3GATMA1 Pin Configuration
| Pin 1 | Gate β Gate control input; drive with 10 V for full RDS(on) specification |
| Pin 2 | Drain β Drain terminal; electrically connected to the metal tab/backside |
| Pin 3 | Source β Source terminal; reference for gate drive |
Safe Operating Area (DC)
Typical Applications
IPD200N15N3GATMA1 is suitable for 7 applications: 48V Telecom DC-DC Synchronous Rectifier, Server Hot-Swap / OR-ing Controller Switch, Industrial Motor Drive Half-Bridge, E-Mobility Battery Pack Protection FET, Solar Power Optimizer Bypass Switch, High-Current DC Load Switch, Telecom Power OR-ing Diode Replacement.
48V Telecom DC-DC Synchronous Rectifier
The IPD200N15N3GATMA1 is well suited as the low-side synchronous rectifier in 48 V input telecom DC-DC converters where it must drop 30-60 V at 20-40 A with minimal conduction loss. Its 20 mOhm RDS(on) at VGS=10 V keeps conduction loss around 16-32 W at full load (I^2 x RDS(on) estimate), and the low Qg of OptiMOS 3 minimizes switching loss at 100-200 kHz operation. Compared with older planar 150 V MOSFETs, the IPD200N15N3GATMA1 reduces rectifier loss by approximately 30-40% per Infineon's published FOM data. Place it on the secondary side of an isolated full-bridge or push-pull topology with a 10 V gate drive from the controller's synchronous output.
Recommended
Server Hot-Swap / OR-ing Controller Switch
The IPD200N15N3GATMA1 functions as the main pass-FET or OR-ing FET in 48 V server power distribution where it must carry 30-50 A continuously with low voltage drop. At 40 A continuous, the device dissipates about 32 W (I^2 x RDS(on) estimate), manageable on a DPAK footprint with 1-2 square inches of copper pour. Its 150 V VDS rating provides substantial transient margin for load-step events and inductive kickback. Use a hot-swap controller IC to slowly ramp VGS via gate-source resistor network during insertion, preventing inrush current and connector arcing.
Recommended
Industrial Motor Drive Half-Bridge
In industrial motor drive half-bridges at 48-80 V bus, the IPD200N15N3GATMA1 serves as either the high-side or low-side switch in PWM-driven H-bridge configurations for 1-3 kW BLDC or stepper motors. Its 50 A continuous current and 150 V rating give design margin for the L x di/dt voltage spikes during PWM transitions. The OptiMOS 3 trench process provides robust avalanche energy for unclamped inductive switching events, critical when motor windings generate kickback. Drive the gate from a dedicated half-bridge driver such as IRS2005STRPBF with bootstrap supply for the high side.
Recommended
E-Mobility Battery Pack Protection FET
The IPD200N15N3GATMA1 is suitable as the discharge or charge protection FET in 60-96 V e-mobility battery packs for e-bikes, e-scooters, and light electric vehicles. Its 150 V VDS rating covers 96 V nominal packs (with cells going up to 4.2 V x 24S = 100.8 V fully charged). The 50 A continuous current supports pack discharge currents of 30-40 A continuous with peak capability during acceleration. The body diode can handle regenerative braking current spikes, and the rugged OptiMOS 3 process tolerates short-circuit events during fault conditions.
Recommended
Solar Power Optimizer Bypass Switch
In solar power optimizers operating at panel string voltages up to 100-120 V, the IPD200N15N3GATMA1 acts as the bypass switch that reroutes current around shaded or faulty panel sections. Its 150 V VDS rating provides 25-50% margin over typical 100 V optimizer bus voltages. The 20 mOhm RDS(on) keeps bypass conduction loss under 10 W at 20 A continuous. The low thermal resistance of the DPAK package allows direct PCB mounting without external heatsinking in sealed optimizer enclosures.
Recommended
High-Current DC Load Switch
The IPD200N15N3GATMA1 functions as a high-current DC load switch in industrial automation, test equipment, and battery-powered systems where it must interrupt 20-40 A loads at up to 100 V. The 150 V rating handles typical 48-96 V industrial bus voltages with safety margin. Use a dedicated gate driver with controlled turn-off to limit dv/dt and reduce inductive kickback. Add a TVS diode across drain-source for inductive loads to clamp turn-off transients below the 150 V VDS maximum.
Recommended
Telecom Power OR-ing Diode Replacement
The IPD200N15N3GATMA1 replaces traditional Schottky OR-ing diodes in redundant -48 V telecom power systems, where two or more rectifiers feed a common bus. As a MOSFET OR-ing switch, it drops only 50-200 mV at 30 A (vs 400-600 mV for a Schottky), reducing dissipation from 12-18 W (Schottky estimate) to 1.5-6 W (MOSFET estimate). The 150 V VDS rating comfortably exceeds the -48 V bus plus transient surges. Use a controller IC with VDS sensing to detect reverse current and fast gate turn-off within 1-2 microseconds.
Recommended
Recommended Products Summary
Engineering reference data for IPD200N15N3GATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD200N15N3G | IPD200N15N3GBTMA1 | IPD320N20N3GATMA1 | NVD5867NLT4G | SUD50N15-4P-E3 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | DPAK (TO-252) - same footprint | TO-252 (DPAK) - same footprint |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 150 V | 200 V | 150 V | 150 V |
| Continuous Drain Current (ID) | 50 A | 50 A | 50 A | 34 A | 33 A | 50 A |
| On-Resistance RDS(on) max | 20 mOhm | 20 mOhm | 20 mOhm | 32 mOhm | 30 mOhm | 40 mOhm |
| Technology | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 3 (trench) | Trench | Trench |
| Power Dissipation (TC=25C) | 150 W | 150 W | 150 W | 150 W | 100 W | 125 W |
| Junction Temperature Range | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
Key Differentiators
- 40% lower RDS(on) and 45% improved FOM vs prior generation (vs Infineon IPD200N15N3G (same part number base))
- Higher continuous current rating in DPAK (vs onsemi NVD5867NLT4G)
- Lower RDS(on) than comparable Vishay part (vs Vishay SUD50N15-4P-E3)
Design Notes
Estimated: At ID=30 A continuous and RDS(on)=20 mOhm, the IPD200N15N3GATMA1 dissipates approximately 18 W of conduction loss (I^2 x RDS(on)). The DPAK package has a typical junction-to-ambient thermal resistance of 50-62 C/W on a 1-square-inch copper pour (per Infineon DPAK thermal data). Without additional heatsinking, this results in a 90-110 C junction temperature rise, so the operating ambient should be limited to 60-65 C for reliable long-term operation. Add thermal vias under the drain tab to inner copper planes for improved heat spreading.
Keep the gate-drive loop area minimal by placing the gate resistor (10-100 Ohm) and gate-driver IC within 5-10 mm of the gate pin. The high-current drain-source loop should be the largest loop on the PCB; route input/output bulk capacitors to minimize this loop inductance. For switching frequencies above 100 kHz, use a 4-layer PCB with dedicated ground and power planes to contain switching noise and prevent ground bounce.
Do not operate the IPD200N15N3GATMA1 above 80% of its 150 V VDS rating (i.e., 120 V) for continuous operation to provide transient margin. Use a TVS diode rated for 100-120 V working voltage across drain-source when switching inductive loads. The gate-source threshold (VGS(th)) is typically 2-4 V; do not use logic-level (3.3 V) drive directly without a charge pump or bootstrap, as this may not fully enhance the device and can cause excessive conduction loss.
Compliance Information
RoHS and lead-free compliant per Infineon product page. Not AEC-Q100 qualified - check IPD200N15N3GATMA1 automotive variant if needed.
