IPD22N08S2L50ATMA1 - 75V 27A OptiMOS N-Channel MOSFET | Infineon
料号： IPD22N08S2L50ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.76 | $0.76 |
| 10 | $0.65 | $6.50 |
| 100 | $0.55 | $55.00 |
| 500 | $0.46 | $230.00 |
| 1,000 | $0.39 | $390.00 |
IPD22N08S2L50ATMA1 概述
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to control current flow between drain and source terminals. Logic-level MOSFETs such as the IPD22N08S2L50ATMA1 are designed to fully turn on with VGS as low as 4.5 V, enabling direct drive from 3.3 V or 5 V microcontrollers without gate-driver ICs. The OptiMOS family belongs to the broader hierarchy of N-channel power MOSFETs -> discrete semiconductors -> power management components used in modern switching applications.
Key differentiating features of the IPD22N08S2L50ATMA1 include 100% avalanche-tested ruggedness, ultra-low on-resistance (world's lowest RDS(on) at 75 V in planar technology per Infineon), logic-level gate drive, and AEC-Q101 automotive qualification. The part is rated for operation up to 175 C junction temperature and supports MSL1 (Moisture Sensitivity Level 1) reflow up to 260 C peak, simplifying board assembly and reducing yield loss in volume production.
Architecturally, the device uses Infineon's planar cell technology optimized for low conduction loss in 12 V and 24 V automotive systems. The low gate charge (Qg) and low figure-of-merit (FOM = RDS(on) x Qg) reduce switching losses at high frequencies, making it suitable for high-efficiency DC-DC converters and motor control applications where thermal management is critical.
Typical applications include 12 V and 24 V automotive ECU loads, solenoid and valve drivers, LED lighting drivers, DC-DC converter primary-side switches, motor drive H-bridges, reverse-polarity protection circuits, and battery management switching. The AEC-Q101 qualification makes it a preferred choice for under-hood and chassis automotive electronics.
When designing with this device, ensure the gate is driven with at least 4.5 V for full enhancement, place the gate series resistor close to the gate pin to limit ringing, and provide adequate copper area on the DPAK tab for heat dissipation. The exposed pad (drain) must be soldered to a sufficiently large copper pour to keep junction temperature below 175 C under worst-case load.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing an independent engineering perspective for component selection and BOM risk mitigation.
直接替换替代料： IPD22N08S2L50ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IPD22N08S2L50ATMA1 （相同外形与封装尺寸） ——差异在于 Automotive Qualification, Drain-Source Voltage (VDS), Operating Junction Temperature.
快速对比工具——选择替代料号进行并排对比：
IPD25N08S2L-50
✅ 直接替换📋 参考替代料（不在目录中）
IPD22N08S2L-50
✅ 直接替换📋 参考替代料（不在目录中）
IPD50N06S409ATMA2
✅ 直接替换✓ 有现货
$0.49 / 个
查看数据手册 →IPI50N10S3L-15
✅ 直接替换📋 参考替代料（不在目录中）
IRFR3711ZPBF
✅ 直接替换📋 参考替代料（不在目录中）
NTD25N075
✅ 直接替换📋 参考替代料（不在目录中）
RFP22N08LE
✅ 直接替换📋 参考替代料（不在目录中）
IPD22N08S2L50ATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS |
| 晶体管类型 | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | 75 V |
| Continuous Drain Current (ID, Tc) | 27 A |
| Maximum Power Dissipation (Ptot) | 75 W |
| On-Resistance RDS(on) max @ VGS=10V | 23 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | Logic-Level (typ. 1.7-2.5 V) |
| Avalanche Energy Rating | 100% Avalanche Tested |
| 工作结温 | -55 C to +175 C |
| 封装 | PG-TO252-3-11 (DPAK) |
| 安装类型 | Surface Mount |
| MSL 等级 | MSL1 (per JEDEC J-STD-020, up to 260 C peak reflow) |
| Automotive Qualification | AEC-Q101 Qualified |
| Lead-Free / RoHS | Yes (Green Package) |
IPD22N08S2L50ATMA1 引脚配置
| 引脚 1 | Gate — Gate control input (logic-level, 4.5V typical for full enhancement) |
| 引脚 2 | Drain — Drain terminal (internally connected to tab/exposed pad) |
| 引脚 3 | Source — Source terminal (signal ground reference for gate drive) |
| 引脚 Tab | Drain — Exposed thermal pad - electrically connected to pin 2 (Drain); must be soldered to PCB copper pour for thermal dissipation |
安全工作区 (SOA) - IPD22N08S2L50ATMA1 in DPAK
典型应用
IPD22N08S2L50ATMA1 适用于 7 应用s: Automotive 12V/24V ECU Load Switching, Solenoid and Valve Drivers, DC-DC Converter Primary-Side Switch, Motor Drive H-Bridge Switch, Reverse-Polarity Protection Circuit, LED Lighting Driver Switch, Battery Management Switching.
Automotive 12V/24V ECU Load Switching
The IPD22N08S2L50ATMA1's 75V VDS rating and AEC-Q101 qualification make it ideal for 12V and 24V automotive ECU load switching. With 27A continuous drain current at Tc and 23 mOhm typical RDS(on), it handles peak inrush currents from solenoids and motors while keeping conduction losses under 2W at typical 5A loads. Its logic-level gate drive allows direct connection to 5V microcontroller GPIO without gate drivers, simplifying PCB design in body control modules and engine management units. The 175 C junction temperature rating supports under-hood deployment where ambient temperatures exceed 125 C.
推荐
Solenoid and Valve Drivers
In automotive solenoid and valve driver circuits, the IPD22N08S2L50ATMA1's 100% avalanche-tested ruggedness absorbs the inductive kickback when de-energizing coils. The 75W power dissipation rating supports high-duty-cycle PWM operation at 1 kHz to 20 kHz, while 23 mOhm RDS(on) minimizes thermal rise in continuous-on mode. Its logic-level gate enables direct MCU drive via 5V GPIO, eliminating the need for an external gate driver IC. The DPAK package provides sufficient thermal mass for typical solenoid currents of 1-3A with a moderate PCB copper pour.
推荐
DC-DC Converter Primary-Side Switch
The IPD22N08S2L50ATMA1 serves as the primary-side switch in 12V-to-low-voltage buck converters for automotive infotainment and ADAS systems. Its low gate charge and 23 mOhm RDS(on) deliver a figure-of-merit that enables switching frequencies up to 500 kHz with high efficiency. The 75V VDS rating provides 3x headroom over 24V automotive buses, easily absorbing load-dump transients. Logic-level gate drive allows direct control from automotive-grade MCUs with 5V GPIO, reducing BOM cost by eliminating isolated gate drivers in non-isolated topologies.
推荐
Motor Drive H-Bridge Switch
In 12V/24V brushed DC motor H-bridges, the IPD22N08S2L50ATMA1 functions as both high-side and low-side switch. Its 27A continuous drain current handles typical automotive motor loads (window lift, seat adjust, fan), while 75V VDS protects against regenerative voltage spikes. The 23 mOhm RDS(on) at 10V VGS minimizes conduction losses during PWM at 50% duty cycle. Logic-level gate drive simplifies bootstrap capacitor design in high-side positions, as the gate can be driven directly from 5V gate driver outputs. AEC-Q101 qualification is essential for OEM warranty compliance.
推荐
Reverse-Polarity Protection Circuit
In reverse-polarity protection circuits for automotive ECUs, the IPD22N08S2L50ATMA1 replaces traditional Schottky diodes, reducing power dissipation from Vf x I to I^2 x RDS(on). At 10A load, the diode-based solution dissipates ~5W while this MOSFET dissipates ~2.3W (10A x 23 mOhm), a 50% reduction. The 75V VDS rating handles automotive load-dump transients (typically clamped to 35-40V), and AEC-Q101 qualification matches OEM automotive requirements. Logic-level gate drive allows simple P-MOSFET-style high-side connection with N-channel MOSFET via charge pump.
推荐
LED Lighting Driver Switch
The IPD22N08S2L50ATMA1 functions as the switching element in automotive LED headlight and daytime-running-light drivers. Its 23 mOhm RDS(on) handles 5-10A continuous LED current with minimal thermal rise, while 75V VDS accommodates 24V commercial vehicle buses. AEC-Q101 qualification ensures reliability under thermal cycling and vibration. Logic-level gate drive simplifies PWM dimming circuits driven by automotive MCUs, enabling 100 Hz to 1 kHz dimming frequencies without external gate driver complexity. The DPAK package fits within the small PCB area constraints of headlamp modules.
推荐
Battery Management Switching
In 12V/48V mild-hybrid battery management systems, the IPD22N08S2L50ATMA1 serves as a low-side disconnect switch or pre-charge MOSFET. Its 27A continuous rating handles typical pre-charge currents of 5-15A during DC-link capacitor charging, and 75V VDS provides headroom for 48V bus transients. The 23 mOhm RDS(on) keeps steady-state losses under 1W at 5A continuous, reducing thermal management complexity in sealed BMS enclosures. AEC-Q101 qualification and 175 C junction rating support under-hood deployment next to battery packs.
推荐
推荐产品汇总
工程参考数据： IPD22N08S2L50ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IPD25N08S2L-50 | IPD22N08S2L-50 | IPD50N06S409ATMA2 | IPI50N10S3L-15 | NTD25N075 | RFP22N08LE |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | onsemi |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Drain-Source Voltage (VDS) | 75 V | 75 V | 75 V | 60 V | 100 V | 75 V | 80 V |
| Continuous Drain Current (ID at Tc) | 27 A | 25 A | 22 A | 50 A | 50 A | 25 A | 22 A |
| Gate Drive Level | Logic-Level (4.5V) | Logic-Level (4.5V) | Logic-Level (4.5V) | Standard (10V) | Logic-Level (4.5V) | Logic-Level (4.5V) | Logic-Level (4.5V) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | Industrial |
| Max Junction Temperature | 175 C | 175 C | 175 C | 175 C | 175 C | 175 C | 150 C |
关键差异点
- AEC-Q101 automotive qualification with 175 C junction rating （对比 RFP22N08LE)
- Ultra-low RDS(on) of 23 mOhm typical in planar technology （对比 NTD25N075)
- Logic-level gate drive with full enhancement at 4.5V （对比 IPD50N06S409ATMA2)
设计说明
Estimated: At continuous drain current of 10 A and RDS(on) of 23 mOhm at 25 C, the IPD22N08S2L50ATMA1 dissipates approximately 2.3 W. With DPAK theta_JA of ~50 C/W on a 1 oz copper 1 sq inch pad, the junction temperature rise is ~115 C above ambient. For continuous operation at 10 A or above, expand the PCB copper area to at least 2-3 square inches, or use thermal vias to inner copper planes, to keep Tj below 150 C (the 25 C margin under the 175 C max rating).
Place a gate series resistor (10-100 ohm) close to the gate pin to dampen parasitic oscillations caused by the gate-source capacitance and source lead inductance. Keep the gate drive loop area small by routing the gate signal directly above the drain/source copper pour. For switching applications above 100 kHz, add a 10 kohm pull-down resistor from gate to source to prevent false turn-on during supply transients.
Do not exceed the 75 V VDS rating even during transient conditions - automotive 24 V systems can generate load-dump transients up to 35-40 V, which is within margin but requires a TVS clamp for safety. Ensure the gate-source voltage never exceeds the +/- 20 V absolute maximum, even during fast switching transients. The exposed pad (Drain) must be soldered to PCB copper for both electrical connection and thermal dissipation - inadequate soldering causes both overheating and electrical failure.
合规信息
AEC-Q101 automotive qualified per Infineon datasheet. MSL1 moisture sensitivity per JEDEC J-STD-020. Green package (lead-free) per Infineon OptiMOS family datasheet. All compliance info sourced from Infineon datasheet and DigiKey product listing.
