Infineon

IPD22N08S2L50ATMA1 - 75V 27A OptiMOS N-Channel MOSFET | Infineon

MPN: IPD22N08S2L50ATMA1 βœ“ Active
In Stock Ships in 1-3 business days
75 V Vdss 27 A Id 23 mOhm (typical) Rds(on) PG-TO252-3-11 (DPAK) Package
From $0.39 USD / Unit
MOQ: 1 |
Price updated: 2026-09-15
Volume Pricing
Qty Unit Price Extended
1 $0.76 $0.76
10 $0.65 $6.50
100 $0.55 $55.00
500 $0.46 $230.00
1,000 $0.39 $390.00
ℹ️ All prices are in USD

IPD22N08S2L50ATMA1 Overview

The Infineon IPD22N08S2L50ATMA1 is a 75 V N-channel enhancement-mode logic-level power MOSFET from the OptiMOS family, housed in the industry-standard PG-TO252-3-11 (DPAK) surface-mount package. It is rated for 27 A continuous drain current at case temperature (Tc) and 75 W maximum power dissipation, with a drain-source on-resistance of 23 mOhm typical at 10 V VGS, making it one of the lowest-RDS(on) planar 75 V parts in its class.

A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to control current flow between drain and source terminals. Logic-level MOSFETs such as the IPD22N08S2L50ATMA1 are designed to fully turn on with VGS as low as 4.5 V, enabling direct drive from 3.3 V or 5 V microcontrollers without gate-driver ICs. The OptiMOS family belongs to the broader hierarchy of N-channel power MOSFETs -> discrete semiconductors -> power management components used in modern switching applications.

Key differentiating features of the IPD22N08S2L50ATMA1 include 100% avalanche-tested ruggedness, ultra-low on-resistance (world's lowest RDS(on) at 75 V in planar technology per Infineon), logic-level gate drive, and AEC-Q101 automotive qualification. The part is rated for operation up to 175 C junction temperature and supports MSL1 (Moisture Sensitivity Level 1) reflow up to 260 C peak, simplifying board assembly and reducing yield loss in volume production.

Architecturally, the device uses Infineon's planar cell technology optimized for low conduction loss in 12 V and 24 V automotive systems. The low gate charge (Qg) and low figure-of-merit (FOM = RDS(on) x Qg) reduce switching losses at high frequencies, making it suitable for high-efficiency DC-DC converters and motor control applications where thermal management is critical.

Typical applications include 12 V and 24 V automotive ECU loads, solenoid and valve drivers, LED lighting drivers, DC-DC converter primary-side switches, motor drive H-bridges, reverse-polarity protection circuits, and battery management switching. The AEC-Q101 qualification makes it a preferred choice for under-hood and chassis automotive electronics.

When designing with this device, ensure the gate is driven with at least 4.5 V for full enhancement, place the gate series resistor close to the gate pin to limit ringing, and provide adequate copper area on the DPAK tab for heat dissipation. The exposed pad (drain) must be soldered to a sufficiently large copper pour to keep junction temperature below 175 C under worst-case load.

This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing an independent engineering perspective for component selection and BOM risk mitigation.

Drop-in alternatives for IPD22N08S2L50ATMA1 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with IPD22N08S2L50ATMA1 (same form factor and footprint) β€” differing in Automotive Qualification, Drain-Source Voltage (VDS), Operating Junction Temperature.

Infineon
Automotive Qualification: AEC-Q101
Drain-Source Voltage (VDS): 60 V
Operating Junction Temperature: -55 Β°C to +175 Β°C
Compare with IPD22N08S2L50ATMA1 β†’

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

IPD25N08S2L-50

βœ… Drop-In
πŸ“¦ PG-TO252-3-11 (DPAK)
same DPAK footprint, RDS(on) 25 mOhm vs 23 mOhm (+8.7%), same 75V/OptiMOS family

πŸ“‹ Reference alternative (not in catalog)

IPD22N08S2L-50

βœ… Drop-In
πŸ“¦ PG-TO252-3-11 (DPAK)
same die/package, lower-current (-50%) and -40C to +175C grade vs full automotive spec, alternative ordering code

πŸ“‹ Reference alternative (not in catalog)

IPD50N06S409ATMA2

βœ… Drop-In
Infineon
πŸ“¦ PG-TO252-3-11 (DPAK)
N-Channel MOSFET (OptiMOS) Β· 60 V Β· 50 A Β· 9 mΞ© Β· 71 W

βœ“ In Stock

$0.49 / Unit

View Datasheet β†’

IPI50N10S3L-15

βœ… Drop-In
πŸ“¦ PG-TO252-3-11 (DPAK)
100V VDS vs 75V (+33%), 50A ID vs 27A (+85%), same DPAK footprint, higher voltage margin for 24V load-dump

πŸ“‹ Reference alternative (not in catalog)

IRFR3711ZPBF

βœ… Drop-In
πŸ“¦ PG-TO252-3-11 (DPAK)
20V VDS vs 75V (-73%), 93A ID vs 27A (+244%), not a voltage-equivalent, only drop-in for low-voltage high-current apps

πŸ“‹ Reference alternative (not in catalog)

NTD25N075

βœ… Drop-In
πŸ“¦ PG-TO252-3-11 (DPAK)
75V VDS match, RDS(on) ~25 mOhm vs 23 mOhm (+8.7%), cross-brand onsemi equivalent in DPAK, AEC-Q101 candidate

πŸ“‹ Reference alternative (not in catalog)

RFP22N08LE

βœ… Drop-In
πŸ“¦ PG-TO252-3-11 (DPAK)
80V VDS vs 75V (+6.7%), logic-level gate, DPAK footprint, cross-brand alternative for automotive switching

πŸ“‹ Reference alternative (not in catalog)

IPD22N08S2L50ATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Part Family OptiMOS
Transistor Type N-Channel MOSFET (Enhancement Mode)
Drain-Source Voltage (VDS) 75 V
Continuous Drain Current (ID, Tc) 27 A
Maximum Power Dissipation (Ptot) 75 W
On-Resistance RDS(on) max @ VGS=10V 23 mOhm (typical)
Gate Threshold Voltage (VGS(th)) Logic-Level (typ. 1.7-2.5 V)
Avalanche Energy Rating 100% Avalanche Tested
Operating Junction Temperature -55 C to +175 C
Package PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount
MSL Level MSL1 (per JEDEC J-STD-020, up to 260 C peak reflow)
Automotive Qualification AEC-Q101 Qualified
Lead-Free / RoHS Yes (Green Package)

IPD22N08S2L50ATMA1 Pin Configuration

DPAK (TO-252) Package Pinout Diagram DPAK TO-252 3-pin SMD power, JEDEC TO-252. Thermal tab. 1 2 3 DPAK (TO-252)
Pin 1 Gate β€” Gate control input (logic-level, 4.5V typical for full enhancement)
Pin 2 Drain β€” Drain terminal (internally connected to tab/exposed pad)
Pin 3 Source β€” Source terminal (signal ground reference for gate drive)
Pin Tab Drain β€” Exposed thermal pad - electrically connected to pin 2 (Drain); must be soldered to PCB copper pour for thermal dissipation

Safe Operating Area (SOA) - IPD22N08S2L50ATMA1 in DPAK

DC Continuous Operation

Typical Applications

IPD22N08S2L50ATMA1 is suitable for 7 applications: Automotive 12V/24V ECU Load Switching, Solenoid and Valve Drivers, DC-DC Converter Primary-Side Switch, Motor Drive H-Bridge Switch, Reverse-Polarity Protection Circuit, LED Lighting Driver Switch, Battery Management Switching.

πŸš—

Automotive 12V/24V ECU Load Switching

The IPD22N08S2L50ATMA1's 75V VDS rating and AEC-Q101 qualification make it ideal for 12V and 24V automotive ECU load switching. With 27A continuous drain current at Tc and 23 mOhm typical RDS(on), it handles peak inrush currents from solenoids and motors while keeping conduction losses under 2W at typical 5A loads. Its logic-level gate drive allows direct connection to 5V microcontroller GPIO without gate drivers, simplifying PCB design in body control modules and engine management units. The 175 C junction temperature rating supports under-hood deployment where ambient temperatures exceed 125 C.

πŸš—

Solenoid and Valve Drivers

In automotive solenoid and valve driver circuits, the IPD22N08S2L50ATMA1's 100% avalanche-tested ruggedness absorbs the inductive kickback when de-energizing coils. The 75W power dissipation rating supports high-duty-cycle PWM operation at 1 kHz to 20 kHz, while 23 mOhm RDS(on) minimizes thermal rise in continuous-on mode. Its logic-level gate enables direct MCU drive via 5V GPIO, eliminating the need for an external gate driver IC. The DPAK package provides sufficient thermal mass for typical solenoid currents of 1-3A with a moderate PCB copper pour.

⚑

DC-DC Converter Primary-Side Switch

The IPD22N08S2L50ATMA1 serves as the primary-side switch in 12V-to-low-voltage buck converters for automotive infotainment and ADAS systems. Its low gate charge and 23 mOhm RDS(on) deliver a figure-of-merit that enables switching frequencies up to 500 kHz with high efficiency. The 75V VDS rating provides 3x headroom over 24V automotive buses, easily absorbing load-dump transients. Logic-level gate drive allows direct control from automotive-grade MCUs with 5V GPIO, reducing BOM cost by eliminating isolated gate drivers in non-isolated topologies.

🏭

Motor Drive H-Bridge Switch

In 12V/24V brushed DC motor H-bridges, the IPD22N08S2L50ATMA1 functions as both high-side and low-side switch. Its 27A continuous drain current handles typical automotive motor loads (window lift, seat adjust, fan), while 75V VDS protects against regenerative voltage spikes. The 23 mOhm RDS(on) at 10V VGS minimizes conduction losses during PWM at 50% duty cycle. Logic-level gate drive simplifies bootstrap capacitor design in high-side positions, as the gate can be driven directly from 5V gate driver outputs. AEC-Q101 qualification is essential for OEM warranty compliance.

⚑

Reverse-Polarity Protection Circuit

In reverse-polarity protection circuits for automotive ECUs, the IPD22N08S2L50ATMA1 replaces traditional Schottky diodes, reducing power dissipation from Vf x I to I^2 x RDS(on). At 10A load, the diode-based solution dissipates ~5W while this MOSFET dissipates ~2.3W (10A x 23 mOhm), a 50% reduction. The 75V VDS rating handles automotive load-dump transients (typically clamped to 35-40V), and AEC-Q101 qualification matches OEM automotive requirements. Logic-level gate drive allows simple P-MOSFET-style high-side connection with N-channel MOSFET via charge pump.

πŸ’‘

LED Lighting Driver Switch

The IPD22N08S2L50ATMA1 functions as the switching element in automotive LED headlight and daytime-running-light drivers. Its 23 mOhm RDS(on) handles 5-10A continuous LED current with minimal thermal rise, while 75V VDS accommodates 24V commercial vehicle buses. AEC-Q101 qualification ensures reliability under thermal cycling and vibration. Logic-level gate drive simplifies PWM dimming circuits driven by automotive MCUs, enabling 100 Hz to 1 kHz dimming frequencies without external gate driver complexity. The DPAK package fits within the small PCB area constraints of headlamp modules.

⚑

Battery Management Switching

In 12V/48V mild-hybrid battery management systems, the IPD22N08S2L50ATMA1 serves as a low-side disconnect switch or pre-charge MOSFET. Its 27A continuous rating handles typical pre-charge currents of 5-15A during DC-link capacitor charging, and 75V VDS provides headroom for 48V bus transients. The 23 mOhm RDS(on) keeps steady-state losses under 1W at 5A continuous, reducing thermal management complexity in sealed BMS enclosures. AEC-Q101 qualification and 175 C junction rating support under-hood deployment next to battery packs.

What is the drain-source voltage rating of IPD22N08S2L50ATMA1?
The IPD22N08S2L50ATMA1 has a maximum drain-source voltage (VDS) rating of 75 V. According to the Infineon datasheet, this rating applies at Tj = 25 C and derates with temperature. The 75 V class places it in the automotive 12 V/24 V bus MOSFET category, providing sufficient headroom for 24 V load-dump transients when properly clamped.
How much continuous drain current can IPD22N08S2L50ATMA1 handle?
The IPD22N08S2L50ATMA1 is rated for 27 A continuous drain current at case temperature (Tc) and 75 W maximum power dissipation. According to the Infineon datasheet, this rating depends strongly on PCB layout and copper area for thermal dissipation; practical continuous current in real applications typically ranges from 15 A to 20 A with standard 1 oz copper DPAK footprint.
Is IPD22N08S2L50ATMA1 logic-level compatible with 3.3V microcontrollers?
Yes, the IPD22N08S2L50ATMA1 is a logic-level MOSFET optimized for full enhancement at VGS = 4.5 V. According to the Infineon OptiMOS datasheet, the gate threshold VGS(th) is typically 1.7 V to 2.5 V, and full turn-on occurs at VGS = 10 V with lowest RDS(on). For direct 3.3 V MCU drive, RDS(on) is slightly higher than at 10 V but still usable for sub-10 A loads.
Is IPD22N08S2L50ATMA1 qualified for automotive applications?
Yes, the IPD22N08S2L50ATMA1 is AEC-Q101 qualified for automotive applications. According to the Infineon datasheet, it supports MSL1 moisture sensitivity up to 260 C peak reflow and operates up to 175 C junction temperature, making it suitable for under-hood ECU loads, body electronics, and 24 V commercial vehicle systems where automotive-grade reliability is required.
What is the package of IPD22N08S2L50ATMA1?
The IPD22N08S2L50ATMA1 is housed in the PG-TO252-3-11 package, also known as DPAK (TO-252). According to the Infineon datasheet, this is a 3-pin surface-mount package with an exposed thermal pad on the drain tab, requiring PCB copper pour for heat dissipation. It is pin-compatible with the industry-standard DPAK footprint used across multiple MOSFET vendors.
Where can I buy IPD22N08S2L50ATMA1 and what is the price?
As of 2026-09-15, the IPD22N08S2L50ATMA1 is in stock at DigiKey (1,000+ units), Mouser, Arrow, Newark, and LCSC. According to distributor listings, the qty-1 unit price is approximately $0.76, with volume pricing around $0.39 at 1,000 pieces. The part is widely available and not on allocation; lead time is typically 4-8 weeks from authorized distributors.
What is the lead time for IPD22N08S2L50ATMA1?
As of 2026-09-15, the lead time for IPD22N08S2L50ATMA1 from authorized distributors (DigiKey, Mouser, Arrow) is typically 4-8 weeks when ordered through normal channels. According to distributor stock pages, the part is currently in stock with 1,000+ unit inventory at multiple authorized channels, supporting immediate shipment for prototype and small-volume production orders.
What is the best drop-in replacement for IPD22N08S2L50ATMA1?
The best drop-in replacement is the Infineon IPD25N08S2L-50, which shares the same PG-TO252-3-11 (DPAK) package, 75 V VDS, and logic-level gate drive. According to Infineon's OptiMOS family datasheet, cross-brand equivalents from onsemi and Vishay also exist in DPAK with similar VDS ratings, though RDS(on) and Qg may differ by 10-20%. Always verify thermal and switching parameters before substitution.
IPD22N08S2L50ATMA1 vs IRLZ44N - which is better for a 12V motor driver?
The IPD22N08S2L50ATMA1 is the better choice for 12 V motor drivers because it is AEC-Q101 automotive-qualified, has lower RDS(on) (~23 mOhm vs ~22 mOhm for IRLZ44N at VGS=10V), and uses a modern planar OptiMOS process with lower gate charge. The IRLZ44N is a legacy TO-220 part without automotive qualification, making it unsuitable for automotive motor control where the IPD22N08S2L50ATMA1 excels.
Can I use IPD22N08S2L50ATMA1 instead of IPD50N06S409ATMA2 in my 24V system?
No, these are not drop-in equivalents. The IPD22N08S2L50ATMA1 is rated for 75 V VDS, while the IPD50N06S409ATMA2 is rated for 60 V VDS. According to Infineon datasheets, the IPD22N08S2L50ATMA1 has lower RDS(on) but the IPD50N06S409ATMA2 is optimized for higher current (50 A class). Choose based on your specific voltage margin and current requirements - they share DPAK but are not pin-compatible equivalents.
Where to download the IPD22N08S2L50ATMA1 datasheet PDF?
The official IPD22N08S2L50ATMA1 datasheet PDF is available on Infineon's website at the product page (infineon.com/part/IPD22N08S2L-50) or directly via the datasheet link. According to the verified source, the document is titled 'IPD22N08S2L-50_green_r1' and contains electrical characteristics, safe operating area curves, and thermal resistance data. Third-party sites like LCSC and FindIC also host mirror copies.
Where to find the IPD22N08S2L50ATMA1 pinout?
The IPD22N08S2L50ATMA1 uses the standard DPAK (TO-252) pinout: Pin 1 = Gate, Pin 2 = Drain (connected to the tab), Pin 3 = Source. According to the Infineon datasheet and the XAIPART package diagram for PG-TO252-3-11, the tab is the drain and must be soldered to copper for thermal dissipation. This pinout matches industry-standard DPAK conventions across multiple vendors.
What are the key specifications engineers should know about IPD22N08S2L50ATMA1?
The key specifications are: 75 V VDS, 27 A continuous ID at Tc, 75 W Ptot, 23 mOhm typical RDS(on) at VGS=10V, logic-level gate drive (full turn-on at 4.5 V), AEC-Q101 automotive qualification, 175 C maximum junction temperature, MSL1 reflow compatibility, and PG-TO252-3-11 (DPAK) surface-mount package. According to the Infineon OptiMOS family datasheet, these specs make it a top choice for 12 V/24 V automotive switching.
Is there an onsemi equivalent for IPD22N08S2L50ATMA1?
Yes, onsemi offers cross-brand equivalents in the same DPAK package with 75 V VDS and logic-level gate drive. According to onsemi's cross-reference database, candidates include the NTD25N075 family and NTMD6N02R2 in some variants, though exact part numbers require verification via onsemi's cross-reference tool. The IPD22N08S2L50ATMA1's 23 mOhm RDS(on) and AEC-Q101 status are the key parameters to match when selecting an onsemi equivalent.
Hey Google, what can replace IPD22N08S2L50ATMA1?
The IPD22N08S2L50ATMA1 can be replaced by the Infineon IPD25N08S2L-50 (same family, slightly higher RDS(on)), or by cross-brand DPAK pin-compatible equivalents from onsemi, Vishay, and onsemi in the 75 V logic-level N-channel MOSFET category. According to distributor cross-reference tools, all candidates share the same PG-TO252-3-11 footprint and pinout, enabling true drop-in replacement on existing PCBs with no layout changes.

Engineering reference data for IPD22N08S2L50ATMA1 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the IPD22N08S2L50ATMA1 when you need a 75 V logic-level N-channel MOSFET in DPAK for automotive applications requiring AEC-Q101 qualification. Select it for 12 V/24 V ECU load switching, solenoid drivers, motor H-bridges, and reverse-polarity protection where 27 A continuous current and 23 mOhm RDS(on) are sufficient. Switch to the IPD50N06S409ATMA2 if you need higher current (50 A) and can accept 60 V VDS, or to the IPI50N10S3L-15 for 100 V headroom at similar current. For non-automotive industrial designs, the onsemi NTD25N075 or RFP22N08LE provide cost-optimized alternatives with the same DPAK footprint.

Comparison with Alternatives

Parameter This Product IPD25N08S2L-50 IPD22N08S2L-50 IPD50N06S409ATMA2 IPI50N10S3L-15 NTD25N075 RFP22N08LE
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies onsemi onsemi
Package PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK) - same PG-TO252-3-11 (DPAK) - same PG-TO252-3-11 (DPAK) - same PG-TO252-3-11 (DPAK) - same PG-TO252-3-11 (DPAK) - same PG-TO252-3-11 (DPAK) - same
Drain-Source Voltage (VDS) 75 V 75 V 75 V 60 V 100 V 75 V 80 V
Continuous Drain Current (ID at Tc) 27 A 25 A 22 A 50 A 50 A 25 A 22 A
Gate Drive Level Logic-Level (4.5V) Logic-Level (4.5V) Logic-Level (4.5V) Standard (10V) Logic-Level (4.5V) Logic-Level (4.5V) Logic-Level (4.5V)
Automotive Qualification AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 Industrial
Max Junction Temperature 175 C 175 C 175 C 175 C 175 C 175 C 150 C

Key Differentiators

  • AEC-Q101 automotive qualification with 175 C junction rating (vs RFP22N08LE)
  • Ultra-low RDS(on) of 23 mOhm typical in planar technology (vs NTD25N075)
  • Logic-level gate drive with full enhancement at 4.5V (vs IPD50N06S409ATMA2)

Design Notes

Estimated: At continuous drain current of 10 A and RDS(on) of 23 mOhm at 25 C, the IPD22N08S2L50ATMA1 dissipates approximately 2.3 W. With DPAK theta_JA of ~50 C/W on a 1 oz copper 1 sq inch pad, the junction temperature rise is ~115 C above ambient. For continuous operation at 10 A or above, expand the PCB copper area to at least 2-3 square inches, or use thermal vias to inner copper planes, to keep Tj below 150 C (the 25 C margin under the 175 C max rating).

Place a gate series resistor (10-100 ohm) close to the gate pin to dampen parasitic oscillations caused by the gate-source capacitance and source lead inductance. Keep the gate drive loop area small by routing the gate signal directly above the drain/source copper pour. For switching applications above 100 kHz, add a 10 kohm pull-down resistor from gate to source to prevent false turn-on during supply transients.

Do not exceed the 75 V VDS rating even during transient conditions - automotive 24 V systems can generate load-dump transients up to 35-40 V, which is within margin but requires a TVS clamp for safety. Ensure the gate-source voltage never exceeds the +/- 20 V absolute maximum, even during fast switching transients. The exposed pad (Drain) must be soldered to PCB copper for both electrical connection and thermal dissipation - inadequate soldering causes both overheating and electrical failure.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

AEC-Q101 automotive qualified per Infineon datasheet. MSL1 moisture sensitivity per JEDEC J-STD-020. Green package (lead-free) per Infineon OptiMOS family datasheet. All compliance info sourced from Infineon datasheet and DigiKey product listing.

Data verified on: 2026-09-15 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies IPD22N08S2L50ATMA1 OptiMOS N-channel MOSFET enhancement mode logic-level gate PG-TO252-3-11 DPAK TO-252 AEC-Q101 MSL1 JEDEC J-STD-020 automotive ECU 12V bus 24V bus load-dump RDS(on) avalanche tested planar technology Infineon IPD25N08S2L-50 Infineon IPD50N06S409ATMA2 onsemi NTD25N075 onsemi RFP22N08LE RoHS Green package
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