IRFH8201TRPBF vs IRFH8318TRPBF 对比
详细并排对比 IRFH8201TRPBF 出自 Infineon 和 IRFH8318TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFH8201TRPBF | IRFH8318TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $0.48 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET (trench MOSFET) | StrongIRFET™ (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 49 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | 324 A | — |
| RDS(on) max at VGS=10V | 0.95 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 1.35 V max | — |
| Total Gate Charge (Qg) | 56 nC at VGS=10V | 41 nC |
| Output Capacitance (Coss) | 7.33 nF | — |
| Reverse Transfer Capacitance (Crss) | 850 pF | — |
| Power Dissipation (TA) | 3.6 W | — |
| Power Dissipation (TC) | 156 W | — |
| 工作温度范围 | -55C to +150C | — |
| 封装 | SuperSO8 5x6 (PQFN-8) with exposed pad | PQFN 5x6 (SuperSO8, 8-PowerTDFN) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFH8318TRPBF |
| Continuous Drain Current (ID) at Ta=25°C | — | 27 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 120 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.1 mΩ |
| Power Dissipation (Ta) | — | 3.6 W |
| Power Dissipation (Tc) | — | 59 W |
| 工作温度 | — | -55°C to +150°C |
| Lead-Free | — | Yes |
| Description | — | Synchronous MOSFET for high-frequency buck converters |