IRS2308SPBF - 600V Half-Bridge Gate Driver IC | Infineon
料号： IRS2308SPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.08 | $540.00 |
| 1,000 | $0.92 | $920.00 |
IRS2308SPBF 概述
A gate driver IC is a specialized high-current buffer stage that sits between a low-power control signal (such as a microcontroller PWM output) and the gate of a power switching device. By providing level shifting, voltage translation, and high-current drive capability, gate drivers overcome the limitations of directly driving MOSFETs or IGBTs from logic-level outputs. The IRS2308SPBF belongs to the half-bridge gate driver category within the broader power management semiconductor family, designed specifically for driving N-channel MOSFETs or IGBTs in a half-bridge (or per-phase) configuration.
Key features include an integrated bootstrap diode for the high-side supply, 540 ns typical propagation delay, deadtime control to prevent shoot-through, and matched propagation delays between channels. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V, making it well-suited for offline motor drive and SMPS applications.
The architecture combines a level-shifted high-side channel with a ground-referenced low-side channel, both driven from a single PWM input (HIN/LIN). An integrated deadtime generation circuit prevents simultaneous turn-on of both outputs. The bootstrap technique supplies the high-side driver from a charge-pump diode and capacitor referenced to the switch node, eliminating the need for an isolated DC/DC converter.
Typical applications include three-phase motor drives, DC/AC inverters, half-bridge and full-bridge SMPS topologies, motor control in industrial automation, and Class D audio amplifiers. The wide 600V blocking voltage supports universal input PFC front ends and 380-480V industrial bus systems.
When designing with the IRS2308SPBF, ensure adequate VCC bypass capacitance (typically 0.1uF ceramic in parallel with an electrolytic) placed close to the VCC and COM pins. The bootstrap capacitor value must be sized to maintain VBS above the UVLO threshold under worst-case duty cycle and switching frequency conditions.
This page synthesizes distributor pricing from DigiKey, Mouser, and Arrow, drop-in compatible alternatives in the SOIC-8 footprint, and practical design notes not consolidated in the manufacturer datasheet.
直接替换替代料： IRS2308SPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRS2308SPBF （相同外形与封装尺寸） ——差异在于 Package, Configuration, Input Logic Compatibility, Input Type, Number of Outputs.
快速对比工具——选择替代料号进行并排对比：
IRS2308STRPBF
✅ 直接替换✓ 有现货
$0.54 / 个
查看数据手册 →IRS2308SPBF-Q1
✅ 直接替换📋 参考替代料（不在目录中）
IR2104SPBF
✅ 直接替换✓ 有现货
$0.41 / 个
查看数据手册 →IR2104STRPBF
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.59 / 个
查看数据手册 →IRS21867STRPBF
✅ 直接替换✓ 有现货
$1.55 / 个
查看数据手册 →IRS2308SPBF 最大额定值与电气特性
| Driver Configuration | Half-Bridge (High Side + Low Side, dependent channels) |
| 输出数量 | 2 (High Side / Low Side) |
| Peak Output Current | 600 mA (source/sink) |
| Output Voltage (High Side) | Up to 600 V |
| Logic Supply Voltage (VCC) | 10 V to 20 V |
| Bootstrap Supply Voltage (VBS) | 10 V to 20 V |
| Propagation Delay (Typical) | 540 ns |
| Input Logic Compatibility | CMOS / LSTTL, 3.3 V logic compatible |
| Input Type | Non-Inverting |
| 工作温度范围 | -40 C to +125 C |
| 封装 / 外壳 | 8-SOIC (SO-8) |
| 安装类型 | Surface Mount |
| 引脚数 | 8 |
| Lead-Free / RoHS | Lead-Free (PbF suffix), RoHS compliant |
| UVLO Protection | Yes (VCC and VBS) |
| Integrated Bootstrap Diode | Yes |
IRS2308SPBF 引脚配置
| 引脚 1 | VCC — Logic and low-side driver supply voltage (10-20V) |
| 引脚 2 | HIN — Logic input for high-side and low-side output (non-inverting, dependent) |
| 引脚 3 | NC — Not connected (per datasheet) |
| 引脚 4 | COM — Low-side return / ground |
| 引脚 5 | LO — Low-side gate drive output |
| 引脚 6 | VS — High-side floating supply return (switch node) |
| 引脚 7 | HO — High-side gate drive output |
| 引脚 8 | VB — High-side floating supply (bootstrap) |
典型应用
IRS2308SPBF 适用于 6 应用s: Three-Phase Motor Drive (Industrial VFD), Half-Bridge SMPS (Power Supply), Solar Inverter (DC-AC Stage), Class D Audio Amplifier, DC-AC Inverter for UPS / Induction Heating, EV Battery Management / Auxiliary DC-DC.
Three-Phase Motor Drive (Industrial VFD)
The IRS2308SPBF is well-suited to drive the three half-bridge legs of a 400-480V AC variable-frequency drive (VFD). With 600 V high-side blocking voltage and 600 mA peak output current, it directly drives N-channel IGBTs or MOSFETs up to several hundred amperes. The dependent input allows simple PWM control from a DSP or microcontroller, while the integrated bootstrap diode simplifies the high-side supply network and reduces BOM. Design tip: select a bootstrap capacitor value (typically 1-10 uF ceramic + bulk) sufficient to maintain VBS above UVLO during the worst-case low-side on-time at the minimum switching frequency.
推荐
Half-Bridge SMPS (Power Supply)
The IRS2308SPBF drives the primary-side half-bridge in a switch-mode power supply operating from universal AC input (85-265 VAC). The 600V rating provides ample margin for rectified 380-400 VDC bulk rails, and the dependent input accepts a single PWM control signal. The 540 ns propagation delay is acceptable for SMPS switching frequencies up to 100-200 kHz. The integrated bootstrap diode eliminates an external component, reducing PCB area and BOM cost. Compared to IR2104 (130 mA drive), the IRS2308SPBF can directly switch larger MOSFETs without a buffer stage.
推荐
Solar Inverter (DC-AC Stage)
In string and micro-inverter DC-AC stages, the IRS2308SPBF drives the IGBT or MOSFET half-bridge leg at switching frequencies up to 50 kHz. The 600V blocking voltage handles 600-1000V DC photovoltaic input rails, and the 600 mA peak current charges MOSFET gate capacitances quickly for low switching loss. The dependent input is compatible with solar MPPT controller PWM outputs, and the integrated bootstrap diode reduces BOM count for cost-sensitive residential PV inverter designs. The wide -40 to +125 C operating range supports outdoor inverter enclosures.
推荐
Class D Audio Amplifier
The IRS2308SPBF serves as the output-stage gate driver in a half-bridge Class D audio amplifier, switching the audio-output MOSFETs at 200-500 kHz PWM. Low propagation delay (540 ns) and matched channel delay preserve audio fidelity and minimize dead-time distortion. The dependent input accepts a single modulator PWM signal, simplifying the analog front-end. The 600V rating is over-specified for typical 50-200V audio rails, but enables use in high-power professional and subwoofer amplifier designs. Integrated bootstrap diode simplifies the high-side supply.
推荐
DC-AC Inverter for UPS / Induction Heating
The IRS2308SPBF drives the half-bridge leg in uninterruptible-power-supply (UPS) DC-AC inversion stages and induction-heating resonant tanks operating from 380-480V rectified bus. The 600V rating handles industrial bus voltages with margin, and the 600 mA peak current drives medium-frequency IGBTs. The dependent input works with simple PWM controllers, while the integrated bootstrap diode and UVLO protection simplify reliable start-up under varying load conditions. The SOIC-8 footprint fits compact UPS PCB layouts.
推荐
EV Battery Management / Auxiliary DC-DC
In 400V-800V electric-vehicle battery systems, the IRS2308SPBF drives the high-voltage half-bridge in auxiliary DC-DC converters and on-board chargers. The 600V blocking voltage supports 400V systems with margin and 800V systems with derating, and the -40 to +125 C automotive temperature range suits under-hood environments. The IRS2308SPBF-Q1 variant is AEC-Q100 qualified for automotive use. The integrated bootstrap diode and dependent input simplify the converter control loop, and the SOIC-8 footprint is compact for chassis-mounted ECUs.
推荐
推荐产品汇总
工程参考数据： IRS2308SPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRS2308STRPBF | IRS2308SPBF-Q1 | IR2104SPBF | IR2104STRPBF | IRS21867STRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Peak Output Current | 600 mA | 600 mA | 600 mA | 130 mA (-78%) | 130 mA (-78%) | 4 A |
| High-Side Blocking Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| VCC Supply Range | 10-20 V | 10-20 V | 10-20 V | 10-20 V | 10-20 V | 10-20 V |
| Integrated Bootstrap Diode | Yes | Yes | Yes | No | No | Yes |
| Input Configuration | Dependent (single PWM) | Dependent (single PWM) | Dependent (single PWM) | Dependent (single PWM) | Dependent (single PWM) | Independent (HIN + LIN) |
| Automotive Grade (AEC-Q100) | No | No | Yes | No | No | No |
关键差异点
- Higher peak output current than IR2104 family in same SOIC-8 footprint （对比 IR2104SPBF)
- Integrated bootstrap diode eliminates external component （对比 IR2104SPBF)
- Automotive-qualified -Q1 variant available in same SOIC-8 （对比 IRS2308SPBF (standard))
设计说明
VCC and VBS supply design: Place a 0.1 uF ceramic bypass capacitor as close as physically possible to the VCC pin (pin 1) and COM pin (pin 4). Add a 1-10 uF bulk capacitor in parallel for switching transient support. The VBS bootstrap supply requires a high-side capacitor (typically 1-10 uF ceramic) connected between VB (pin 8) and VS (pin 6). The capacitor value must be sized so that VBS does not drop below the UVLO threshold during the longest low-side on-time at the minimum switching frequency - undersizing causes high-side lockout and missing PWM pulses.
PCB layout: Keep the gate-drive output traces (HO, LO) short and direct to minimize parasitic inductance, which causes ringing and possible gate-voltage overshoot. Use a ground plane under the IC and tie COM (pin 4) and the low-side MOSFET source kelvin connection to the same ground island. Keep the VS trace short to limit common-mode dv/dt injection into the level-shift circuit. The high-side switch-node trace should not run under the IC to avoid capacitive coupling to the floating supply.
Thermal management: The SOIC-8 has a theta_JA of approximately 100-120 C/W (depends on copper area and PCB stack-up). At 600 mA peak with 50% duty cycle and 50 kHz switching, gate-driver dissipation is typically 100-300 mW, which is well within SOIC-8 capability without a heatsink. For sustained high-frequency (>200 kHz) operation driving large MOSFETs, derate based on actual gate-charge loss: P_loss = VCC * Qg * f_sw.
Common pitfalls: (1) Forgetting the bootstrap capacitor - causes high-side not to turn on. (2) Insufficient deadtime between LO and HO transitions - causes shoot-through in the half-bridge. The IRS2308SPBF dependent input generates HO and LO simultaneously without deadtime, so the system controller must add deadtime, OR add gate-source resistors to slow switching edges. (3) Exceeding VS negative transient rating during low-side turn-off with inductive loads - use a low-side gate resistor or external schottky clamp on VS to COM.
合规信息
PbF suffix indicates lead-free and RoHS compliant. AEC-Q100 qualified variant is IRS2308SPBF-Q1 (not the base part). Halogen-free status not stated in provided data.
