IR2104SPBF - 600V Half-Bridge Gate Driver | Infineon
MPN: IR2104SPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.79 | $0.79 |
| 10 | $0.72 | $7.20 |
| 100 | $0.58 | $58.00 |
| 500 | $0.47 | $235.00 |
| 1,000 | $0.41 | $410.00 |
Drop-in alternatives for IR2104SPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IR2104STRPBF
✅ Drop-In✓ In Stock
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View Datasheet →IRS2104STRPBF
✅ Drop-In✓ In Stock
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View Datasheet →IRS2101STRPBF
✅ Drop-In✓ In Stock
$1.18 / Unit
View Datasheet →IRS2004STRPBF
✅ Drop-In✓ In Stock
$0.66 / Unit
View Datasheet →IR2104SPBF Maximum Ratings & Electrical Characteristics
| Function | Half-bridge gate driver |
| Number of Drivers | 2 (high-side + low-side) |
| Configuration | High and Low Side |
| Input Type | Logic (non-inverting) |
| Maximum Offset / Bootstrap Supply Voltage | 600 V |
| Gate Drive Supply Range (VCC) | 10 V to 20 V |
| Output Source Current | 130 mA typical |
| Output Sink Current | 270 mA typical |
| Propagation Delay | 680 ns typical |
| Rise Time | 160 ns typical |
| Fall Time | 60 ns typical |
| Logic Input Compatibility | 3.3 V, 5 V, 15 V CMOS/LSTTL |
| Undervoltage Lockout | Yes (VCC UVLO) |
| Deadtime | Internally set |
| Cross-Conduction Prevention | Yes |
| Operating Temperature Range | -40 C to +125 C |
| Package | 8-pin SOIC |
| RoHS Status | Compliant (PBF suffix indicates lead-free) |
IR2104SPBF Pin Configuration
| Pin 1 | VCC — Logic and low-side supply voltage (10-20V) |
| Pin 2 | IN — Logic input for high-side and low-side output (non-inverting) |
| Pin 3 | SD — Shutdown (active low, tie to VCC for normal operation) |
| Pin 4 | COM — Low-side return / ground reference |
| Pin 5 | LO — Low-side gate drive output |
| Pin 6 | VS — High-side floating supply return / bootstrap return |
| Pin 7 | HO — High-side gate drive output |
| Pin 8 | VB — High-side floating supply (bootstrap) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IR2104SPBF is suitable for 6 applications: Three-Phase Motor Drive Inverter, Half-Bridge SMPS Power Converter, Class-D Audio Amplifier Output Stage, Electronic Lighting Ballast (HID/LED), Solar Inverter / PV Micro-Inverter, Uninterruptible Power Supply (UPS) / Inverter.
Three-Phase Motor Drive Inverter
The IR2104SPBF is well suited as the high-side/low-side gate driver for one phase leg of a three-phase IGBT or MOSFET inverter driving AC induction motors and BLDC motors up to 400 V bus. Its 600 V offset rating provides ample margin above a 220 V or 380 V rectified DC bus, and the 130/270 mA drive current is adequate for IGBT modules with gate charge up to ~100 nC at switching frequencies of 4-20 kHz typical for motor PWM. Internally-set deadtime and cross-conduction prevention logic eliminate shoot-through in the half-bridge without requiring external timing circuits, reducing BOM and improving reliability. Three IR2104SPBF devices (one per phase) plus bootstrap diodes form a complete three-phase inverter gate-drive section. The 8-pin SOIC package enables compact PCB layout adjacent to each phase leg, minimizing parasitic inductance in the gate-drive loop - critical for clean switching transients.
Recommended
Half-Bridge SMPS Power Converter
The IR2104SPBF drives the primary-side half-bridge in isolated DC-DC converters and offline SMPS up to several hundred watts. With 600 V offset rating, the high-side channel drives the upper primary MOSFET directly from a bootstrap supply, eliminating the need for an isolated gate-drive transformer. The 130 mA source current is sufficient for MOSFETs in the 500 V class with total gate charge of 20-50 nC at switching frequencies of 50-200 kHz. Built-in undervoltage lockout on VCC prevents operation with insufficient gate drive, which would otherwise cause MOSFET linear-mode operation and catastrophic failure. The matched channel-to-channel propagation delay (680 ns typical) keeps duty cycle symmetry in the half-bridge, minimizing DC bias in the transformer and reducing output ripple. Designers should size the bootstrap capacitor to supply sufficient gate charge for the high-side FET at the maximum duty cycle and switching frequency.
Recommended
Class-D Audio Amplifier Output Stage
The IR2104SPBF provides the half-bridge gate-drive function for Class-D audio amplifiers using a complementary MOSFET output stage. The 600 V rating supports subwoofer amplifiers up to 200-300 V bus rails for high-power automotive and professional audio applications, while the 130/270 mA drive current is adequate for driving audio-optimized MOSFETs at switching frequencies of 250-500 kHz typical for Class-D. The matched propagation delay keeps the differential output stage balanced, minimizing even-order harmonic distortion that would degrade THD+N. Internal deadtime prevents simultaneous conduction of high-side and low-side FETs that would cause shoot-through and audible clicks. Combined with an audio PWM modulator IC, three pairs of IR2104SPBF + complementary MOSFETs form a complete Class-D amplifier output stage with 90%+ efficiency.
Recommended
Electronic Lighting Ballast (HID/LED)
The IR2104SPBF drives the resonant half-bridge inverter in HID (high-intensity discharge) lamp ballasts and high-power LED drivers. The 600 V rating supports HID lamps operating from 230 V mains rectified to ~325 V bus, while the matched channel timing maintains symmetric switching in the resonant tank for stable lamp current regulation. Internal deadtime and cross-conduction prevention are essential in resonant converters where improper timing would cause MOSFET body-diode reverse recovery and efficiency loss. The compact 8-pin SOIC package enables integration in small-form-factor ballast modules. Bootstrap operation simplifies the high-side drive without isolated supply, reducing ballast cost and size compared to gate-drive transformer solutions.
Recommended
Solar Inverter / PV Micro-Inverter
The IR2104SPBF is used in the DC-AC conversion stage of photovoltaic micro-inverters and string inverters. The 600 V floating channel rating supports 600 V PV string open-circuit voltage with appropriate derating, while the 10-20 V VCC range can be derived from auxiliary housekeeping supplies typical in PV inverter architectures. Bootstrap supply eliminates isolated gate-drive transformers, reducing cost and complexity per phase leg. The matched propagation delay maintains inverter output voltage symmetry across the 50/60 Hz line cycle, minimizing low-frequency harmonic distortion. Internal UVLO on VCC prevents MOSFET operation in linear mode at low PV input voltages (morning startup, cloud transients), protecting the power stage. Industrial temperature grade (-40 C to +125 C) is suitable for outdoor inverter enclosures.
Recommended
Uninterruptible Power Supply (UPS) / Inverter
The IR2104SPBF drives the half-bridge IGBT stages in UPS systems, off-grid solar inverters, and bidirectional battery converters. With 600 V rating, the device handles 220 V / 380 V AC bus voltages directly via bootstrap, and the 270 mA sink current is adequate for fast turn-off of high-current IGBT modules used in 1-10 kVA UPS products. The internal deadtime prevents cross-conduction during high-current switching transients typical in UPS load steps. Operating temperature range of -40 C to +125 C supports industrial UPS deployments in uncontrolled environments. The compact 8-SOIC package allows dense PCB layout in space-constrained UPS power modules. Built-in shutdown (SD) pin allows external fault signals to inhibit both gate outputs for system protection.
Recommended
Recommended Products Summary
Engineering reference data for IR2104SPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2104STRPBF | IRS2104STRPBF | IRS2101STRPBF | IRS2004STRPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC | 8-SOIC (same) | 8-SOIC (same) | 8-SOIC (same) | 8-SOIC (same) |
| Maximum Offset Voltage | 600 V | 600 V | 600 V | 600 V | 200 V |
| Output Source Current | 130 mA | 130 mA | 130 mA | 130 mA | [DATA_NEEDED] |
| Output Sink Current | 270 mA | 270 mA | 270 mA | 270 mA | [DATA_NEEDED] |
| Propagation Delay | 680 ns | 680 ns | tighter match | 680 ns | [DATA_NEEDED] |
| VCC Supply Range | 10-20 V | 10-20 V | 10-20 V | 10-20 V | 10-20 V |
| Logic Compatibility | 3.3/5/15 V CMOS | 3.3/5/15 V CMOS | 3.3/5/15 V CMOS | 3.3/5/15 V CMOS | 3.3/5/15 V CMOS |
| Internal Deadtime | Yes | Yes | Yes | No (independent inputs) | Yes |
Key Differentiators
- Higher 600 V rating versus IRS2004 family (vs IRS2004STRPBF)
- Single-input logic with internal deadtime vs independent inputs (vs IRS2101STRPBF)
- Lower cost per unit versus newer IRS2104 variant (vs IRS2104STRPBF)
- Stronger source/sink current versus typical low-cost gate drivers (vs Discrete push-pull buffer drivers (e.g., TC4420 pair))
Design Notes
Bootstrap circuit layout is critical for IR2104SPBF high-side performance. Place the bootstrap diode (e.g., UF4007 or similar fast-recovery) and the 0.1-1 uF bootstrap capacitor as close as physically possible to pins 8 (VB) and 6 (VS) of the SOIC package. Keep the high-side gate-drive loop area (HO -> gate resistor -> MOSFET gate -> MOSFET source -> VS -> COM path) minimal - typically under 1 square cm - to limit parasitic inductance that causes gate-oscillation, overshoot, and EMI. Use a ground plane on the COM-side and avoid running sensitive analog signals under the high-side drive loop.
Bootstrap capacitor sizing: Cboot must supply enough charge to fully drive the high-side MOSFET gate plus replenish any leakage, while VBS voltage drop must remain above the UVLO threshold (typically 7-8V) at the end of each high-side on-time. Estimate: Cboot_min = Qgate_total / delta_VBS. For a 50 nC Qg MOSFET and 1V allowed droop, Cboot >= 50 nF minimum, but typically 0.1-1 uF X7R ceramic is used for margin. Refresh the bootstrap cap during every low-side on-time via the bootstrap diode from VCC.
Although the IR2104SPBF is a small-signal driver IC (not a power switch), it still dissipates significant power at high switching frequencies: P_driver ~ VCC x Qg_total x fsw. At 100 kHz switching a 50 nC Qg MOSFET with VCC = 15V, dissipation is 75 mW per output, manageable in SOIC-8 (theta_JA ~150 C/W on standard JEDEC test board, resulting in ~11 C rise). Ensure the SOIC is soldered to adequate copper area (at least 100 sq mm) to keep junction temperature within the -40 to +125 C operating range, especially in enclosed motor-drive enclosures with limited airflow.
Common IR2104SPBF design errors: (1) Forgetting to tie the SD (shutdown, pin 3) to VCC - the device will not operate if SD floats low. (2) Using a slow-recovery bootstrap diode (1N4007 is too slow at 100 kHz+) which causes excessive VBS droop. (3) Insufficient VCC decoupling - place a 0.1 uF ceramic plus 10 uF electrolytic directly at pin 1. (4) Exceeding the VS negative transient rating - in half-bridge switching, VS can swing below COM by the body-diode forward drop plus parasitic inductance spike; adding a small Schottky diode from COM to VS mitigates this. (5) Driving MOSFETs with Qg above ~150 nC may saturate the 130 mA source current, causing slow turn-on and switching loss.
Compliance Information
PBF suffix indicates lead-free RoHS-compliant construction. Not AEC-Q100 qualified - for automotive applications, consult Infineon's automotive-grade gate driver portfolio.
