IRS21867STRPBF - 600V 4A Hi/Lo Side Gate Driver SOIC-8 | Infineon
MPN: IRS21867STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.49 | $2.49 |
| 10 | $2.21 | $22.10 |
| 100 | $1.95 | $195.00 |
| 500 | $1.72 | $860.00 |
| 1,000 | $1.55 | $1,550.00 |
Drop-in alternatives for IRS21867STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS21867SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS21867STRPBF-Q1
β Drop-Inπ Reference alternative (not in catalog)
IRS2181STRPBF
β Drop-Inβ In Stock
$0.62 / Unit
View Datasheet βIRS21834STRPBF
β Drop-Inβ In Stock
$1.45 / Unit
View Datasheet βIR2104STRPBF
β Drop-Inβ In Stock
$0.59 / Unit
View Datasheet βIR2110STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS21867STRPBF Maximum Ratings & Electrical Characteristics
| Topology | High-Side and Low-Side (Half-Bridge) |
| Offset Voltage (High-Side, max) | 600 V |
| Output Current (Source/Sink, typical) | 4 A / 4 A |
| Supply Voltage VCC | 10 V to 20 V |
| Bootstrap Supply VBS | up to VCC + 600 V (floating) |
| Input Logic Compatibility | 3.3 V and 5 V CMOS / TTL |
| Rise Time (typ, 1 nF load) | 22 ns |
| Fall Time (typ, 1 nF load) | 18 ns |
| Turn-On Propagation Delay (typ) | 170 ns |
| Turn-Off Propagation Delay (typ) | 170 ns |
| Undervoltage Lockout | Yes (VCC and VBS) |
| Operating Temperature Range (TJ) | -40C to +150C |
| Package | 8-SOIC (SOIC-8, 8-pin SOIC N T/R) |
| Mounting Type | Surface Mount |
| MSL Level | 2 |
| RoHS Status | Compliant |
| Lead-Free Status | Lead Free |
| Channel Count | 2 (1 high-side + 1 low-side) |
| Input Type | Non-Inverting (HIN, LIN) |
IRS21867STRPBF Pin Configuration
| Pin 1 | VCC β Low-side and logic supply voltage (10V to 20V) |
| Pin 2 | HIN β Logic input for high-side output (CMOS/TTL) |
| Pin 3 | LIN β Logic input for low-side output (CMOS/TTL) |
| Pin 4 | GND β Ground reference for low-side and logic |
| Pin 5 | LO β Low-side gate drive output |
| Pin 6 | VS β High-side floating supply return (switching node) |
| Pin 7 | HO β High-side gate drive output |
| Pin 8 | VB β High-side floating supply (bootstrap) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IRS21867STRPBF is suitable for 7 applications: Half-Bridge Motor Drive Inverter, Half-Bridge and Full-Bridge DC-DC Converter, Solar Microinverter Power Stage, Induction Heating Resonant Inverter, Class-D Audio Amplifier Output Stage, Automotive 48V Mild-Hybrid DC-DC Converter, Industrial SMPS Half-Bridge Primary.
Half-Bridge Motor Drive Inverter
The IRS21867STRPBF drives the high-side and low-side IGBTs of a 3-phase half-bridge inverter for sub-1 kW BLDC or PMSM motors in pumps, fans, and small appliances. Its 4 A peak source/sink current switches 600 V/20 A IGBTs with sub-50 ns transition times, while the 3.3 V logic-compatible inputs connect directly to a dsPIC or STM32 motor-control MCU without level shifters. The matched 170 ns propagation delay on HIN and LIN minimizes deadtime mismatch, which directly improves inverter efficiency by 1 to 2 percent and reduces audible noise from the motor.
Recommended
Half-Bridge and Full-Bridge DC-DC Converter
In 400 V to 48 V LLC, phase-shifted full-bridge, or hard-switched half-bridge DC-DC converters, the IRS21867STRPBF drives the primary-side MOSFETs or IGBTs with 4 A peak current that is well matched to 600 V/30 A silicon. The 22 ns rise and 18 ns fall times keep switching losses below 1 percent of total efficiency at 50 kHz, while the VCC UVLO at 8 V prevents partial-gate-drive operation that could cause cross-conduction. The 8-SOIC footprint saves board area versus discrete high-side drive implementations, enabling higher power density telecom and server brick designs.
Recommended
Solar Microinverter Power Stage
The IRS21867STRPBF is used in the 400 V grid-tied H-bridge output stage of a 250 W to 600 W solar microinverter, where it drives each half-bridge leg of the unfolding bridge. Its 600 V rating handles the rectified 240 V AC peak (340 V DC bus) with margin for transient grid surges. The 3.3 V logic compatibility simplifies interfacing with TI C2000 or Microchip dsPIC MPPT controllers, while the 4 A drive strength directly switches the IGBTs without external buffer stages. The high-side bootstrap supply eliminates the bulky gate-drive transformer required by alternative isolated gate driver solutions.
Recommended
Induction Heating Resonant Inverter
In a resonant induction-heating half-bridge operating at 20 to 100 kHz, the IRS21867STRPBF provides the matched high-side and low-side gate drive required for series-resonant LC tank excitation. The 170 ns matched propagation delay on HIN and LIN keeps the deadtime balanced, preventing tank detuning and asymmetric current flow that would reduce heating efficiency. The 4 A drive current directly switches IGBTs up to 50 A collector current without pre-driver stages, and the 22 ns rise time supports the high dV/dt needed for zero-voltage-switching (ZVS) transitions in the resonant tank.
Recommended
Class-D Audio Amplifier Output Stage
The IRS21867STRPBF drives the complementary MOSFET pair of a 200 W to 500 W half-bridge Class-D audio amplifier output stage. Its 4 A drive strength and 22 ns transition times preserve audio signal integrity at switching frequencies of 250 to 500 kHz, keeping deadtime-induced THD below 0.01 percent. The 3.3 V logic-compatible inputs accept PWM audio directly from a TAS5558 or similar modulator DSP without external level shifters. The matched HS/LS propagation delay prevents audio distortion from imbalanced deadtime, while the integrated UVLO protects the output MOSFETs during supply ramp-up.
Recommended
Automotive 48V Mild-Hybrid DC-DC Converter
In a 48 V mild-hybrid belt-starter-generator (BSG) or 48 V to 12 V DC-DC converter, the IRS21867STRPBF-Q1 (AEC-Q100 qualified version) drives the primary-side MOSFETs of an isolated full-bridge topology. The 600 V rating provides ample margin for the 48 V bus plus reflected leakage inductance transients, while the 3.3 V logic compatibility interfaces with automotive-grade MCUs such as the AURIX family. The 4 A drive current switches 100 V automotive MOSFETs at 100 kHz switching frequency, enabling power densities above 2 kW/L in the underhood environment.
Recommended
Industrial SMPS Half-Bridge Primary
The IRS21867STRPBF serves as the half-bridge primary-side gate driver in 500 W to 1500 W industrial switch-mode power supplies used in factory automation and welding equipment. Its 600 V rating handles the 400 V rectified industrial bus, while the 4 A source/sink drive directly switches IGBTs at 20 to 50 kHz. The integrated VCC and VBS UVLO functions prevent catastrophic half-bridge shoot-through during brownout events, and the monolithic HVIC construction reduces EMI susceptibility versus discrete bootstrap designs.
Recommended
Recommended Products Summary
Engineering reference data for IRS21867STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS21867SPBF | IRS21867STRPBF-Q1 | IRS2181STRPBF | IR2104STRPBF | IR2110STRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 16-SOIC - larger |
| Topology | HS + LS Half-Bridge | HS + LS Half-Bridge | HS + LS Half-Bridge | HS + LS Half-Bridge | HS + LS Half-Bridge | HS + LS Half-Bridge |
| Offset Voltage (max) | 600 V | 600 V | 600 V | 600 V | 600 V | 500 V |
| Output Current (Source/Sink) | 4 A / 4 A | 4 A / 4 A | 4 A / 4 A | 1.9 A / 2.3 A | 0.2 A / 0.36 A | 2 A / 2 A |
| VCC Operating Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Input Logic Compatibility | 3.3 V / 5 V CMOS/TTL | 3.3 V / 5 V CMOS/TTL | 3.3 V / 5 V CMOS/TTL | CMOS/TTL (5V typical) | CMOS/TTL | CMOS/TTL (5V typical) |
| Automotive Grade (AEC-Q100) | No | No | Yes | No | No | No |
Key Differentiators
- 4 A source/sink drive strength in 8-SOIC package (vs IR2104STRPBF)
- 3.3 V logic compatibility without level translation (vs IRS2181STRPBF)
- AEC-Q100 automotive qualified variant available in same package (vs IR2110STRPBF)
Design Notes
Bootstrap capacitor sizing is critical for IRS21867STRPBF reliability. Use a 1 uF or larger low-ESR ceramic bootstrap capacitor (X7R or X5R dielectric) paired with a UF4007 or schottky bootstrap diode. The capacitor must recharge fully during every low-side ON interval, and VBS must remain above the VBSUVLO+ threshold (typically 8 V) during the entire high-side ON time. Estimated: at 50 kHz switching with 90 percent high-side duty cycle and 1 nC Qg load, a 1 uF capacitor droops less than 0.5 V, providing safe margin above UVLO.
The 8-SOIC package has limited thermal dissipation capability. At continuous switching above 50 kHz into 1 nF loads, the gate-drive losses alone can reach 0.1 to 0.2 W, raising junction temperature 10 to 20 C above ambient. Estimated: for 100 kHz switching into 1 nF, total gate-drive loss is approximately 22 ns * 4A * 15V * 100 kHz = 130 mW. Place the IRS21867STRPBF near the power switches to minimize gate-loop inductance, and consider the IRS21867S exposed-pad variant for designs requiring continuous high-frequency switching above 100 kHz.
Minimize the high-side gate-driver loop area by placing the bootstrap capacitor (VB-VS) and the high-side gate resistor physically close to pins 7 and 8 of the IRS21867STRPBF. A high dV/dt on the VS node (up to 50 V/ns) injects displacement current into the bootstrap loop; a tight layout keeps this below 100 mV and prevents false triggering. According to the Infineon datasheet typical connection diagram, keep the VS trace short and direct, and use a ground plane on the bottom layer for the LIN/LO return path.
Do not operate the IRS21867STRPBF with VCC below the VCCUVLO+ threshold (typically 8 V) or above 20 V. Below 8 V, the gate drive is too weak to fully enhance the IGBT, causing partial conduction and high losses. Above 20 V, the internal logic can be damaged. Always include a bootstrap refresh pulse by ensuring the low-side is turned on for at least 1 us per switching cycle to recharge the bootstrap capacitor. Do not leave the high-side on for more than a few hundred microseconds continuously without bootstrap refresh.
Compliance Information
RoHS compliant and lead-free per Infineon product page. The IRS21867STRPBF is not AEC-Q100 qualified - choose IRS21867STRPBF-Q1 for automotive. Halogen-free per DigiKey listing. Conflict minerals compliant per Infineon supplier declarations.
