MBR0520LT3G - 20V 0.5A Schottky Rectifier, SOD-123 | onsemi
料号： MBR0520LT3G ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.41 | $0.41 |
| 10 | $0.36 | $3.60 |
| 100 | $0.18 | $18.00 |
| 500 | $0.12 | $60.00 |
| 1,000 | $0.09 | $90.00 |
| 3,000 | $0.07 | $210.00 |
MBR0520LT3G 概述
A Schottky rectifier is a semiconductor diode that uses a metal-semiconductor junction instead of a PN junction. Compared with conventional silicon rectifiers, Schottky devices exhibit a lower forward voltage drop (typically 0.3-0.5 V versus 0.7-1.0 V) and negligible reverse-recovery charge, which eliminates switching losses. Within the broader power-semiconductor taxonomy, Schottky rectifiers sit below standard-recovery and ultrafast-recovery rectifiers, and are widely used as freewheeling, OR-ing, and reverse-polarity-protection diodes where switching speed and low Vf matter more than reverse-blocking voltage.
The MBR0520LT3G features a guard ring for enhanced ruggedness and long-term reliability, very low forward voltage drop, extremely fast switching speed, and negligible switching losses. The epoxy-molded SOD-123 case is lead-free (Pb-free, marked with the "F" suffix per onsemi's Pb-free designation) and rated for MSL 1 moisture sensitivity. Maximum repetitive peak reverse voltage (VRRM) is 20 V, DC blocking voltage is 20 V, average rectified forward current is 0.5 A, and the operating junction temperature range spans -55 C to +150 C.
Internally the device uses a single die with a guard-ring passivated junction to suppress edge breakdown and leakage. The very low reverse-recovery time (typically a few nanoseconds) and low stored charge make it suitable for switching converters operating in the hundreds-of-kHz range, where silicon-rectifier recovery losses would otherwise dominate efficiency. The metal-barrier construction also gives a soft thermal characteristic.
Typical applications include low-voltage high-frequency rectification in DC-DC converters, freewheeling diodes across inductive loads, reverse-polarity protection on battery and USB ports, and OR-ing of redundant power rails. The compact SOD-123 footprint makes it the standard choice when PCB area is at a premium and the working voltage does not exceed 20 V.
When designing with this part, derate forward current with temperature - at 25 C the part handles 0.5 A but must be reduced above 75 C per the datasheet derating curve. For reverse-polarity protection, place the MBR0520LT3G in series with the load with the cathode toward the source; its low Vf minimizes the dropout penalty in low-voltage systems.
This page consolidates onsemi specification data, drop-in and cross-brand alternatives sourced from distributor cross-reference tools, and practical design notes not assembled in any single manufacturer datasheet.
直接替换替代料： MBR0520LT3G ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MBR0520LT1G
✅ 直接替换📋 参考替代料（不在目录中）
SBR80520LT1G
✅ 直接替换📋 参考替代料（不在目录中）
MBR0540T3G
✅ 直接替换📋 参考替代料（不在目录中）
MBR0530T3G
✅ 直接替换📋 参考替代料（不在目录中）
B0520LW
✅ 直接替换📋 参考替代料（不在目录中）
B5819W
✅ 直接替换📋 参考替代料（不在目录中）
CDBW0520-G
✅ 直接替换📋 参考替代料（不在目录中）
MBR0520LT3G 最大额定值与电气特性
| Manufacturer | onsemi |
| Series | MBR0520 |
| Product Type | Schottky Barrier Rectifier (Single Diode) |
| 封装 / 外壳 | SOD-123 (2-pin) |
| 安装类型 | Surface Mount |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 20 V |
| DC Blocking Voltage (VR) | 20 V |
| Average Rectified Forward Current (IF(AV)) | 0.5 A |
| 工作结温范围 | -55 C to +150 C |
| Storage Temperature Range | -55 C to +150 C |
| Diode Configuration | Single |
| Reverse Recovery Time (trr) | Negligible (Schottky) |
| 湿敏等级（MSL） | MSL 1 (Unlimited) |
| Lead-Free Status | Yes (Pb-free per "F" suffix) |
| RoHS Compliance | ROHS3 Compliant |
| REACH Status | Unaffected |
| Packaging | Tape & Reel (T3 suffix = 8 mm carrier, 3000 pcs/reel) |
MBR0520LT3G 引脚配置
| 引脚 1 | Cathode — Cathode terminal (marked with cathode band on case) |
| 引脚 2 | Anode — Anode terminal |
典型应用
MBR0520LT3G 适用于 6 应用s: Low-Voltage DC-DC Converter Rectification, Freewheeling Diode Across Inductive Loads, Reverse-Polarity Protection, OR-ing of Redundant Power Rails, Automotive 12 V Accessory Rail Protection, Switch-Mode Power Supply Snubber / Clamp.
Low-Voltage DC-DC Converter Rectification
The MBR0520LT3G's 20 V reverse rating and 0.5 A average forward current match directly to the output rectification stage of small isolated and non-isolated DC-DC converters operating from 3.3 V, 5 V or 12 V buses. Its negligible reverse-recovery charge eliminates switching losses at switching frequencies from 100 kHz up to several MHz, materially improving converter efficiency compared with PN-junction rectifiers. The SOD-123 footprint occupies less than 9 mm^2 of board area, allowing dense converter layouts; for synchronous-rectified designs, pair it with a low-RDS(on) MOSFET such as the IRLML6401 as a lossless alternative. The 20 V VRRM gives adequate margin above typical 12 V rectified rails.
推荐
Freewheeling Diode Across Inductive Loads
Placed across relay coils, solenoids, motor windings, or small inductor kickback paths, the MBR0520LT3G clamps the back-EMF when the inductor de-energises. Its very fast switching (Schottky, no reverse recovery) prevents the negative spike from rising above the device's 20 V rating, protecting downstream transistors. The 0.5 A average forward current handles most small-signal inductive loads, while the -55 C to +150 C junction range tolerates the elevated temperatures typical inside enclosures. Compared with a 1N4001 (1 A PN rectifier), the MBR0520LT3G switches ~10x faster, eliminating the 50-100 V transient that PN rectifiers permit during turn-off.
推荐
Reverse-Polarity Protection
Placed in series with the load (cathode toward the source), the MBR0520LT3G blocks reverse-battery conditions up to 20 V and prevents damage to downstream circuitry. Its low forward voltage drop (typically 0.3-0.4 V at 0.1-0.5 A) keeps the protection penalty low, which is critical in battery-powered designs where every millivolt of dropout reduces runtime. For higher-current applications a P-MOSFET (such as the IRLML6401) gives a lower-loss solution, but for sub-0.5 A loads the Schottky is the most compact and cost-effective choice. The SOD-123 footprint is significantly smaller than a Schottky in SMA, enabling protection in wearables and IoT devices.
推荐
OR-ing of Redundant Power Rails
In redundant power designs (USB + battery, mains adapter + battery backup), two MBR0520LT3G diodes isolate the rails so that one source cannot back-drive the other. The 20 V reverse rating covers 5 V and 12 V rails with substantial margin; the 0.5 A rating suits board-level rails for sensors, MCUs, and small peripherals. The Schottky's near-zero reverse-recovery charge prevents cross-conduction spikes when sources switch. For higher-current OR-ing (above 0.5 A), the MBR1060 (SMA package) or a P-MOSFET OR controller such as the LTC4412 should be considered. The low forward drop of the Schottky improves efficiency compared with silicon PN rectifiers.
推荐
Automotive 12 V Accessory Rail Protection
The MBR0520LT3G handles 12 V automotive accessory rails for infotainment, lighting, and small motor loads. Its -55 C to +150 C junction temperature range covers automotive underhood cold-cranking and high-temperature environments, and its MSL 1 moisture rating ensures robustness through reflow. For reverse-polarity protection on a 12 V body-control module, the MBR0520LT3G blocks -12 V transients up to its 20 V forward-blocking rating. The part is widely second-sourced (Vishay B0520LW, Diodes Inc B5819W, Comchip CDBW0520-G), giving OEMs multi-vendor resilience for AEC-Q100-bound designs.
推荐
Switch-Mode Power Supply Snubber / Clamp
In flyback, forward, and buck converters, leakage inductance from the transformer or inductor can produce voltage spikes that exceed the main switch's rating. A Schottky clamp diode such as the MBR0520LT3G, placed across the primary winding, snubs these spikes and dissipates the energy safely. The device's 20 V rating suits low-voltage-input designs (5 V and 12 V inputs), and the very fast turn-on time catches spikes that slower PN rectifiers would miss. Compared with a TVS diode, the MBR0520LT3G has a sharper knee and lower capacitance, giving a tighter clamp voltage at the cost of higher peak dissipation.
推荐
推荐产品汇总
工程参考数据： MBR0520LT3G ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MBR0520LT1G | SBR80520LT1G | MBR0540T3G | MBR0530T3G | B0520LW | B5819W | CDBW0520-G |
|---|---|---|---|---|---|---|---|---|
| Package | SOD-123 | SOD-123 - same | SOD-123 - same | SOD-123 - same | SOD-123 - same | SOD-123 - same | SOD-123 - same | SOD-123 - same |
| Brand | onsemi | onsemi | onsemi | onsemi | onsemi | Vishay Intertechnology | Diodes Incorporated | Comchip Technology |
| Maximum Reverse Voltage (VRRM) | 20 V | 20 V - same | 20 V - same | 40 V (+100%) | 30 V (+50%) | 20 V - same | 20 V - same | 20 V - same |
| Average Forward Current (IF(AV)) | 0.5 A | 0.5 A - same | 0.5 A - same | 0.5 A - same | 0.5 A - same | 0.5 A - same | 0.5 A - same | 0.5 A - same |
| Reverse Recovery Time (trr) | Negligible (Schottky) | Negligible - same | Negligible - same | Negligible - same | Negligible - same | Negligible - same | ||
| Junction Temperature Range | -55 C to +150 C | -55 C to +150 C - same | -55 C to +150 C - same | -55 C to +150 C - same | -55 C to +150 C - same | -65 C to +150 C | ||
| Approx. Unit Price at 1k (2026-10-09) | $0.09 | $0.09 - same | $0.12 - +33% | $0.10 - +11% | $0.10 - +11% | $0.07 - -22% |
关键差异点
- Tighter second-source ecosystem than competing 20 V SOD-123 Schottkys （对比 B5819W (Diodes Inc))
- Guard-ring construction for long-term reliability （对比 Generic 20 V SOD-123 Schottkys)
- MSL 1 moisture sensitivity simplifies storage and assembly （对比 Larger Schottky packages (SMA, SMB))
设计说明
Derate forward current with temperature: the MBR0520LT3G is rated for 0.5 A average forward current at 25 C case temperature, but the onsemi derating curve shows current must be reduced above 75 C. Estimated: at 125 C ambient with no heatsinking, the SOD-123 thermal resistance (theta_JA ~ 200 C/W typical on a 1-oz 1-square-inch copper pour) limits continuous current to roughly 0.15 A. For higher currents use SMA-packaged MBR1060 (1 A) or SMB-packaged MBR2045 (2 A) families. Mount the SOD-123 land pattern per the onsemi recommended PCB footprint for the lowest possible thermal resistance.
Do not use the MBR0520LT3G above 20 V reverse bias - even brief transients above 20 V can permanently damage the junction. Add a TVS diode or zener clamp on the input if the source (such as an automotive load-dump, a transformer leakage spike, or a USB VBUS hot-plug event) can produce higher voltage. When used for reverse-polarity protection, ensure the diode's 20 V reverse rating exceeds the maximum DC bus voltage of the system plus transient overshoot; for a 12 V automotive rail use the MBR0540T3G (40 V) instead.
Use the onsemi recommended SOD-123 land pattern with thermal vias to a copper pour on the opposite side of the board. A 1-oz copper pour of at least 100 mm^2 reduces theta_JA to ~150 C/W, sufficient for 0.3 A continuous at 70 C ambient. Place the diode close to the source of any inductive kick (relay coil, motor terminal) to minimise the parasitic inductance that limits snubbing effectiveness. Keep trace width on the anode and cathode at least 0.5 mm (20 mils) to carry 0.5 A without significant voltage drop.
For switching-converter rectification, keep the loop formed by the diode, the input capacitor, and the switching node as small as possible to minimise parasitic inductance that causes ringing at the switching edges. The Schottky's fast switching exposes it to high dV/dt, so a small RC snubber (10 ohm + 1 nF) across the diode can clean up the ringing. For reverse-polarity protection on a high-current bus, prefer a P-MOSFET (e.g. IRLML6401) over the MBR0520LT3G to eliminate the forward-voltage loss.
合规信息
ROHS3 compliant and REACH unaffected per PartGenie compliance data; lead-free per the "F" suffix in the MPN. AEC-Q100 not specifically qualified by onsemi for the LT3G variant - for AEC-Q100-qualified automotive Schottkys, refer to the onsemi automotive-grade catalog. Halogen-free status not stated in available data.
