MD7P19130HSR3 vs MD7P19130HR3 对比
详细并排对比 MD7P19130HSR3 出自 NXP Semiconductors 和 MD7P19130HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MD7P19130HSR3 | MD7P19130HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $65.10 | $69.50 |
| 晶体管类型 | LDMOS (Dual), Lateral N-Channel RF Power MOSFET | LDMOS (Dual), N-Channel Enhancement-Mode Lateral |
| Technology | NXP HV7 LDMOS | Airfast LDMOS, lateral N-channel |
| Drain-Source Voltage (VDS) Rated | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Frequency Range | 1930 MHz to 1990 MHz | 1.93 GHz to 1.99 GHz |
| Output Power (Pout) | 40 W average (W-CDMA, single-carrier) | — |
| Power Gain | 20 dB typical at 1987.5 MHz | 20 dB (typical at Pout = 40 W) |
| Drain Efficiency | 30% typical at 40 W, 1987.5 MHz | 30% (typical at Pout = 40 W, W-CDMA) |
| Quiescent Drain Current (IDQ) | 1250 mA | 1250 mA |
| ACPR (5 MHz offset, 3.84 MHz channel) | -36 dBc typical | — |
| Input Signal PAR | 7.5 dB @ 0.01% probability on CCDF | 7.5 dB at 0.01% CCDF |
| Device Output Signal PAR | 6 dB @ 0.01% probability on CCDF | — |
| 封装 / 外壳 | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged | NI-780-4 (Case 465M-01, Style 1), ceramic flange |
| 安装类型 | Chassis-mount (bolt-down) with ceramic lid | Surface Mount (bolt-down flange) |
| Operating Mode | Single-carrier W-CDMA, Class AB | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: rohs status from manufacturer] |
| Typical Drain Voltage (VDD) | — | 28 V |
| Drain Voltage - Rated | — | 65 V |
| Output Power (Avg, W-CDMA) | — | 40 W |
| ACPR | — | -36 dBc at 5 MHz offset (3.84 MHz channel) |
| Output Signal PAR | — | 6 dB at 0.01% CCDF |