MRF6S19140HR3 vs MRF6S19140HR5 对比

详细并排对比 MRF6S19140HR3 出自 NXP Semiconductors 和 MRF6S19140HR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6S19140HR5 MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 ✓ 量产中

规格对比

参数 MRF6S19140HR3 MRF6S19140HR5
品牌 NXP Semiconductors NXP Semiconductors
分类 RF MOSFETs MOSFETs
生命周期状态 Obsolete 有效
库存状态 有库存 有库存
单价(USD) $25.20 $82.40
晶体管类型 LDMOS N-Channel Enhancement-Mode Lateral MOSFET N-Channel RF Power LDMOS
Frequency Range 1.93 GHz to 1.99 GHz (1930-1990 MHz) —
Drain-Source Voltage (Max Rated) 68 V —
Test Drain Voltage (Vdd) 28 V —
Test Drain Current 1.15 A —
Power Output (Pout, Avg) 29 W —
Power Gain 16 dB (typ) —
效率 [DATA_NEEDED: drain efficiency %] —
封装 / 外壳 NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange NI-880H-2L ceramic flange
引脚数量 3 —
安装类型 Chassis / Stud-Mount (ceramic flange, bolt-down thermal) Chassis / flange mount (bolt-down)
Application Class Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier —
Operating Mode CW / pulsed RF amplifier —
Original Manufacturer Freescale Semiconductor (now NXP) —
Lead / Termination Finish Gold-plated (per datasheet case drawing) —
MSL [DATA_NEEDED: MSL rating] —
RoHS 状态 [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
HSL/R3 Suffix R3 = 13" tape and reel —
Datasheet Document MRF6S19140H.pdf (NXP/Freescale) —
Datasheet Length 12 pages (per third-party datasheet index) —
Manufacturer — NXP Semiconductors (formerly Freescale)
Drain-Source Voltage (Vdss) — 68 V (max)
Operating Drain Voltage (typical) — 28 V
Pulsed Drain Current (Id) — 1.15 A
Output Power (Pout) — 29 W (CW or pulsed)
Operating Frequency — 1.93 GHz to 1.99 GHz
Small-Signal Gain — 16 dB (typical)
Process Technology — HV6 LDMOS
Lead-Free — [DATA_NEEDED: lead-free status]
工作温度范围 — [DATA_NEEDED: operating temp range]
Channel-to-Flange Thermal Resistance — 0.45 C/W (estimated, datasheet figure)

数据手册与资源

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