NVT4555UKAZ - SIM Card Interface Level Translator LDO | NXP
料号： NVT4555UKAZ ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.76 | $7.60 |
| 100 | $0.62 | $62.00 |
| 500 | $0.54 | $270.00 |
| 1,000 | $0.47 | $470.00 |
NVT4555UKAZ 概述
A SIM card interface IC is a specialized power management and level-translation device in the broader hierarchy of interface ICs within power and signal management semiconductors. Mobile phone baseband processors typically run on low-voltage rails (1.8 V), while SIM cards historically required 3 V or 1.8 V supplies; a level translator plus LDO bridges this gap, protecting the SIM interface and ensuring correct logic levels on the clock, reset and data lines.
Key features of the NVT4555 include the integrated LDO that can deliver two different voltages, 1.8 V or 2.95 V, from typical mobile phone battery voltages up to 5.25 V, and three level translators for the data, RSTn and CLKn signals between the SIM card and the host microcontroller. The device is built specifically for interfacing a SIM card with a single low-voltage host side interface, reducing external component count in cellular handsets.
Architecturally, the NVT4555 combines a linear regulated supply path with unidirectional level-shifting stages on the SIM control and data lines, allowing a host controller operating at its native IO voltage to communicate safely with the SIM card at the card-selected supply level. This integration is typical of NXP's NVT translation and power interface family designed for mobile and connectivity platforms.
Typical applications include SIM card interfaces in mobile phones, cellular modems, M2M modules, telematics units and IoT gateways where a low-voltage host must drive an industry-standard SIM card.
Design consideration: verify the selected SIM supply voltage (1.8 V versus 2.95 V) matches the card class in use, and confirm signal timing margins across the level translators at the target clock rate per the manufacturer datasheet.
This page synthesizes distributor sourcing data, the NXP product information, and practical drop-in alternative guidance not found in the manufacturer datasheet alone.
直接替换替代料： NVT4555UKAZ ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
NVT4555UK
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
NVT4556UK
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
NVT4555UKAZ 规格参数
| 功能 | SIM card interface level translator and supply voltage LDO |
| LDO Output Voltages | 1.8 V or 2.95 V (selectable) |
| Maximum Input Voltage | 5.25 V |
| Level Translators | 3 (data, RSTn, CLKn) |
| Host Side Interface | Single low-voltage host side interface |
| Application | SIM card interfacing |
| 封装 | Uncased flip-chip SMD die (REEL13 SMD/P packing) |
| 品牌 | NXP Semiconductors |
| 安装类型 | Surface Mount (uncased die) |
| Automotive Grade (AZ suffix) | Yes (AZ suffix denotes automotive variant) |
NVT4555UKAZ uncased flip-chip smd die (reel13 smd/p packing) 引脚配置指南
NVT4555UKAZ（uncased flip-chip smd die (reel13 smd/p packing) 封装）的引脚配置。 引脚编号、功能和连接图在制造商数据手册中定义。请参阅该手册以了解确切的封装尺寸和焊接指南。
暂无详细引脚数据： NVT4555UKAZ.
请参阅 数据手册 以查看完整引脚配置。
典型应用
NVT4555UKAZ 适用于 6 应用s: Mobile Phone SIM Interface, Cellular IoT / M2M Module SIM Interface, Automotive Telematics and eCall Units, Point-of-Sale Terminal SIM Interface, Tablet and Wearable Connectivity, Industrial Routers and Gateways.
Mobile Phone SIM Interface
In a cellular handset, the baseband processor operates at a low-voltage IO rail while the SIM card requires either a 1.8 V or 2.95 V supply. The NVT4555UKAZ fits this application because its integrated LDO generates both selectable card voltages from battery-derived rails up to 5.25 V, and its three level translators shift the data, RSTn and CLKn lines to the correct card-side levels. Placed between the baseband and the SIM connector, the device eliminates a discrete LDO and separate level shifters, saving board area in space-critical phone layouts. The uncased flip-chip die format further reduces footprint, though assembly requires compatible die-handling processes.
推荐
Cellular IoT / M2M Module SIM Interface
LTE Cat-M and NB-IoT modules embed a SIM interface that must power and communicate with either 1.8 V or 2.95 V cards. The NVT4555UKAZ suits this application because it sources the SIM supply directly from a module battery or regulated rail up to 5.25 V and translates the three SIM control/data lines between the module's low-voltage host interface and the card. Its small uncased die allows dense placement inside the module footprint, and the selectable LDO output supports multi-region deployments where card voltage classes vary. Designers should budget the LDO output current against the card class per the datasheet specification.
推荐
Automotive Telematics and eCall Units
Automotive telematics control units and eCall emergency-call modules use embedded SIM cards that must remain powered across the full vehicle operating envelope. The AZ suffix on the NVT4555UKAZ marks the automotive-oriented grade of the NVT4555 silicon, making it appropriate for these programs. The device supplies the SIM at 1.8 V or 2.95 V from vehicle-derived rails up to 5.25 V and level-translates the data, RSTn and CLKn lines to the module's host interface. Designers should verify the exact qualification scope and temperature grade in the NXP documentation for their specific program and provide appropriate ESD protection on the SIM connector lines.
推荐
Point-of-Sale Terminal SIM Interface
Payment terminals and POS devices use SIM or SAM (Secure Access Module) cards for network authentication. The NVT4555UKAZ fits because it generates the card supply at 1.8 V or 2.95 V from terminal battery or adapter rails up to 5.25 V and safely shifts the data, RSTn and CLKn signals between the terminal's low-voltage processor and the card. Integration of LDO and translators in one die shortens the SIM card-detection and power-up sequence design, and the small uncased die suits compact handheld enclosures. Verify level translator timing against the terminal's card clock frequency in the datasheet.
推荐
Tablet and Wearable Connectivity
Tablets, smartwatches with cellular capability and rugged wearables embed SIM interfaces where every square millimeter counts. The NVT4555UKAZ addresses this because its uncased flip-chip die is among the smallest possible implementations of the SIM power-and-translate function, and its LDO covers both card voltage classes (1.8 V / 2.95 V) from rails up to 5.25 V typical of single-cell lithium battery systems. The three translators handle data, RSTn and CLKn, matching the standard SIM signaling set. Layout should keep the die close to the SIM connector to preserve signal integrity on the clock line and minimize radiated emissions.
推荐
Industrial Routers and Gateways
Industrial cellular routers and gateways use SIM cards for primary or backup WAN connectivity and often operate from 5 V or wide-input supplies that simplify to a rail near or below 5.25 V. The NVT4555UKAZ suits this because it takes such rails directly and generates the SIM supply at 1.8 V or 2.95 V while translating the host-side data, RSTn and CLKn signals. Robust level translation prevents card latch-up during hot-insertion events, and the selectable voltage supports both legacy and current card types in the field. Engineers should confirm LDO load capability against the installed card class per the manufacturer datasheet.
推荐
推荐产品汇总
工程参考数据： NVT4555UKAZ ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | NVT4555UK | NVT4556UK |
|---|---|---|---|
| Package | Uncased flip-chip SMD die | Uncased flip-chip SMD die - same | Uncased flip-chip SMD die - same format |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Application Focus | SIM card interface | SIM card interface - identical | SIM card interface family |
关键差异点
- Automotive-grade (AZ) qualification of the NVT4555 silicon （对比 NVT4555UK)
- Integrated dual-voltage LDO plus three translators in one die （对比 NVT4556UK)
- Uncased flip-chip die for minimum footprint （对比 Discrete LDO + level-shifter solution)
设计说明
The NVT4555UKAZ LDO accepts inputs up to 5.25 V and outputs either 1.8 V or 2.95 V. Estimate the LDO power dissipation as (VIN - VSIM) x ISIM before finalizing the layout; for example, at VIN = 5.25 V, VSIM = 1.8 V, dissipation is proportional to the card current draw and must stay within the die's thermal limits for the uncased format. Because this is a bare-die product, thermal dissipation depends heavily on the die-attach and substrate copper; consult the NXP datasheet thermal application section and verify with worst-case card current per the SIM card class in use.
This is an uncased flip-chip die, not a molded package. The PCB land pattern must follow the NXP datasheet bump coordinates exactly, and assembly typically requires reflow processes compatible with bare die (REEL13 SMD/P packing). Place 100 nF to 1 uF ceramic decoupling close to the LDO input and SIM supply bumps (exact values per the NXP datasheet typical application circuit). Keep the CLKn trace short and guard it from switching rails to preserve clock edge integrity at the card.
Two common pitfalls: (1) mixing the AZ (automotive) and standard-grade parts in production without updating qualification records - the silicon is identical but qualification scope differs; (2) assuming a molded-package substitute - the NVT4555 is sold as uncased die, so any substitution must be verified bump-for-bump against the datasheet pin map. Also confirm the selected LDO output (1.8 V vs 2.95 V) matches the installed SIM card class before mass production, since powering a 1.8 V card at 2.95 V can damage it.
合规信息
Compliance status not stated in the retrieved web data. The AZ suffix indicates an automotive-oriented variant; confirm AEC-Q100 qualification scope and RoHS/REACH status on the official NXP product page before procurement.
