TEA2208T/1 - Active Bridge Rectifier Controller | NXP
料号： TEA2208T/1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.42 | $142.00 |
| 500 | $1.21 | $605.00 |
| 1,000 | $1.02 | $1,020.00 |
TEA2208T/1 概述
An active bridge rectifier controller is a power management IC that drives four external MOSFETs in an H-bridge configuration so that AC mains is rectified with conduction losses far below those of a conventional 4-diode bridge. In the power-conversion hierarchy it sits at the input stage of an AC-DC converter, ahead of the main switching stage, and directly determines end-to-end efficiency of desktop PC power supplies and notebook adapters.
Key features include high-current rail-to-rail MOS output drivers that minimize driver dissipation and gate-charge losses to as low as 2 mW combined, elimination of rectifier diode forward-conduction losses, and a silicon-on-insulator (SOI) process for high-voltage robustness. According to NXP product data, converter efficiency improves by up to about 1.4% at 90 V AC mains input - a significant gain in high-volume, energy-regulated applications.
Technically, the TEA2208T senses AC line polarity and sequences the four gate drivers so that only the diagonal MOSFET pair conducts in each half cycle. Because the external MOSFETs are selected by the designer, conduction loss scales with RDS(on) rather than a fixed diode Vf, allowing efficiency optimization across a wide power range. The SOI process isolates high-voltage domains on chip, supporting direct interfacing with the rectifier node.
Typical applications include desktop and notebook PC power supplies, server and adapter AC-DC front ends, and high-density power converters subject to 80 PLUS and similar efficiency regulations.
Design-wise, select external MOSFETs with low RDS(on) and adequate VDS rating for the applied mains; the controller itself dissipates very little, but MOSFET choice determines total rectifier loss.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： TEA2208T/1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
TEA2209T
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
TEA2208T/1 最大额定值与电气特性
| 功能 | Full-wave active bridge rectifier controller |
| Replaces | Traditional 4-diode bridge rectifier |
| Output Drivers | High-current rail-to-rail MOS output drivers |
| Driver + Gate Charge Losses | As low as 2 mW combined |
| Efficiency Improvement | Up to ~1.4% at 90 V AC mains |
| External MOSFETs | 4x low-ohmic high-voltage MOSFETs |
| Process Technology | Silicon-on-insulator (SOI) |
| 封装 | SOIC-14 |
| 安装类型 | Surface Mount |
| Application Segment | Desktop and notebook PC power supplies |
TEA2208T/1 soic-14 引脚配置指南
TEA2208T/1（soic-14 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： TEA2208T/1.
请参阅 数据手册 以查看完整引脚配置。
典型应用
TEA2208T/1 适用于 6 应用s: Desktop PC Power Supplies, Notebook Adapter Power Supplies, AC-DC Converter Front Ends, Energy-Efficient Server Power Supplies, High-Density Offline Converters, Industrial Auxiliary Power Supplies.
Desktop PC Power Supplies
The TEA2208T is explicitly targeted at desktop PC power supplies, where DigiKey lists the TEA2208T/1J under this segment. In an ATX supply the input diode bridge typically drops about 2 V total (two diodes conducting), so replacing it with TEA2208T-driven MOSFETs removes several watts of loss at higher power levels - NXP quotes up to about 1.4% efficiency improvement at 90 V AC mains. The controller drives four low-ohmic high-voltage MOSFETs in H-bridge configuration, sensing line polarity and switching the correct diagonal pair each half cycle. With driver and gate-charge losses as low as 2 mW combined, the rectifier stage contributes negligibly to internal heating, easing fan and heatsink budgeting and helping the supply meet 80 PLUS efficiency tiers.
推荐
Notebook Adapter Power Supplies
Notebook AC adapters operate from universal 90-264 V AC mains, which is exactly the condition where NXP quantifies the TEA2208T benefit: up to about 1.4% efficiency improvement at 90 V AC. In compact adapters, every watt of heat saved relaxes thermal constraints on the enclosure and improves surface-temperature compliance. The TEA2208T eliminates rectifier diode forward-conduction losses by driving four external MOSFETs whose RDS(on) the designer selects to match adapter power. Combined driver and gate-charge losses of as low as 2 mW mean the controller itself adds essentially no overhead. The SOIC-14 footprint integrates easily into the densely packed input stage of an adapter PCB.
推荐
AC-DC Converter Front Ends
In any offline AC-DC converter - industrial supplies, telecom rectifiers, or appliance power stages - the TEA2208T sits at the front end, replacing the four-diode bridge. According to NXP, using the TEA2208T with low-ohmic high-voltage MOSFETs eliminates the typical rectifier diode forward-conduction losses, the dominant fixed loss of the input stage at light-to-moderate load. At 90 V AC mains the efficiency gain reaches approximately 1.4%. The silicon-on-insulator process lets the controller tolerate the high-voltage environment of the rectifier node, while rail-to-rail MOS output drivers ensure complete enhancement of the external MOSFETs to minimize RDS(on) conduction loss. This makes the part a drop-in efficiency upgrade for new converter designs.
推荐
Energy-Efficient Server Power Supplies
Server PSUs are held to stringent efficiency regulations and continuous-duty thermal budgets, so the TEA2208T's up-to-1.4% efficiency gain at low-line 90 V AC translates directly into reduced cooling cost and higher 80 PLUS Titanium headroom. Unlike a diode bridge whose loss is fixed at roughly I*1 V per half cycle, the MOSFET bridge driven by the TEA2208T scales conduction loss with selected RDS(on), letting designers optimize for the server's actual load profile. The controller's 2 mW-class driver and gate-charge losses keep overhead negligible even at high switching frequencies of the downstream LLC or flyback stage. The SOIC-14 package supports the high component density typical of server power boards.
推荐
High-Density Offline Converters
Compact offline converters - LED drivers, fast chargers, and embedded supplies - benefit from the TEA2208T because removing the diode bridge's heat allows smaller heatsinks and higher power density. NXP designed the part on a silicon-on-insulator process specifically for the high-voltage stress near the rectifier node, and its high-current rail-to-rail MOS drivers keep combined driver plus gate-charge losses as low as 2 mW, so the controller fits without adding thermal load. Designers replace the traditional bridge with four external high-voltage MOSFETs selected for RDS(on), capturing part of the up-to-1.4% efficiency improvement NXP reports at 90 V AC mains while gaining design freedom in MOSFET sizing.
推荐
Industrial Auxiliary Power Supplies
Industrial equipment frequently needs always-on auxiliary supplies fed from three-phase or single-phase mains, where rectifier losses run continuously and accumulate into measurable energy cost. The TEA2208T's active bridge approach removes the fixed diode forward-voltage penalty, and NXP's datasheet cites up to about 1.4% converter efficiency improvement at 90 V AC input. Because loss scales with the RDS(on) of the chosen external MOSFETs, industrial designers can use robust, widely second-sourced high-voltage MOSFETs while the SOIC-14 controller provides polarity sensing and sequencing automatically. The SOI process and rail-to-rail MOS output drivers give the voltage robustness and drive strength required in noisy industrial power environments.
推荐
推荐产品汇总
工程参考数据： TEA2208T/1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | TEA2209T |
|---|---|---|
| Package | SOIC-14 | SOIC-14 (verify per datasheet) |
| Brand | NXP Semiconductors | NXP Semiconductors |
| Function | Full-wave active bridge rectifier controller | Active bridge rectifier controller family variant |
| Lifecycle Status | Active | Active |
关键差异点
- Ultra-low controller overhead （对比 TEA2209T)
- SOI process robustness （对比 Conventional diode bridge solutions)
- Quantified efficiency gain （对比 TEA2209T)
设计说明
Estimate rectifier loss savings before committing to the active bridge: a diode bridge conducting load current I dissipates approximately 2 x I x 1 V (two diodes per half cycle), while a TEA2208T-driven MOSFET bridge dissipates 2 x I^2 x RDS(on) of the selected devices. At 5 A load this is roughly 10 W versus about 0.4 W with 2 x 20 mohm effective path - that difference is what yields the up-to-1.4% converter efficiency NXP reports at 90 V AC mains. Select MOSFETs so the saved watts justify added BOM cost.
Place the four bridge MOSFETs so their AC and DC nodes follow the same low-inductance layout as a conventional bridge footprint, keeping gate-drive traces from the TEA2208T short and routed away from the switched AC node to limit dv/dt coupling into the drivers. Provide adequate copper area under the MOSFETs, since their conduction loss, though small, concentrates locally. Follow the TEA2208T datasheet layout recommendation for the sense connections to the AC input.
Do not treat the TEA2208T as a single-component bridge replacement: it requires four external high-voltage MOSFETs and correct sensing wiring, so retrofitting an existing diode-bridge PCB usually means a layout revision. Verify MOSFET VDS rating against peak mains (e.g., 600 V-class for 230 V AC systems with margin). If considering the TEA2209T family variant, confirm feature and pin differences in the NXP documentation before substitution - the two are related but not confirmed pin-identical by NXP cross-reference.
合规信息
Compliance data not present in the retrieved web data; verify RoHS/REACH status on the NXP TEA2208T product page before procurement.
