UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments
料号： UCC21550BQDWRQ1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.15 | $4.15 |
| 10 | $3.74 | $37.40 |
| 100 | $3.12 | $312.00 |
| 500 | $2.79 | $1,395.00 |
| 1,000 | $2.45 | $2,450.00 |
UCC21550BQDWRQ1 概述
An isolated gate driver is a power-management IC that translates low-voltage PWM logic signals across a galvanic isolation barrier to drive the gate of a power transistor floating at high voltage. Within the power electronics hierarchy, it sits between the PWM controller or MCU (such as a C2000 DSP) and the power switch (MOSFET, SiC MOSFET, GaN FET, or IGBT), and is fundamental to isolated half-bridge, full-bridge, and boost converter stages in industrial and automotive power systems.
Key features of the UCC21550BQDWRQ1 include programmable dead time via an external resistor, a disable pin for fast shutdown, 8V undervoltage lockout (UVLO) on the driver supply for robust SiC/IGBT gate protection, and flexible configuration as two low-side drivers, two high-side drivers, or one half-bridge driver. The reinforced isolation barrier supports functional safety and high-voltage designs per automotive requirements.
Architecturally, the device uses TI capacitive isolation technology, which provides high common-mode transient immunity and fast, precise signal transfer across the barrier. The wide operating temperature range supports underhood and industrial environments, and the 4A/6A asymmetric drive strength allows fast turn-off to minimize switching losses in SiC and IGBT stages.
Typical applications include onboard chargers, DC-DC converters, traction inverters, solar string inverters, and motor drives, where a floating high-side switch and reinforced isolation are mandatory.
Design consideration: select the dead-time resistor value per the datasheet formula and verify the driver-side UVLO threshold (8V) matches the selected SiC MOSFET gate-plateau requirements to avoid operating the switch in a high-resistance region.
This page synthesizes distributor availability data, TI product pages, drop-in family alternatives, and practical design notes not consolidated in the manufacturer datasheet alone.
直接替换替代料： UCC21550BQDWRQ1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： UCC21550BQDWRQ1 （相同外形与封装尺寸） ——差异在于 Disable Function, Configuration, Dead Time, Isolation Type, Package.
快速对比工具——选择替代料号进行并排对比：
UCC21550BDWR
✅ 直接替换✓ 有现货
$0.88 / 个
查看数据手册 →UCC21540DW
✅ 直接替换📋 参考替代料（不在目录中）
UCC21520DW
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
UCC21530DW
✅ 直接替换📋 参考替代料（不在目录中）
UCC21550BQDWRQ1 最大额定值与电气特性
| Driver Type | Dual-channel reinforced isolated gate driver |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Isolation Type | Capacitive coupling |
| Isolation Voltage | 5000 Vrms |
| Isolation Grade | Reinforced isolation |
| Number of Channels | 2 |
| Configuration | Two low-side / two high-side / half-bridge |
| Dead Time | Programmable (external resistor) |
| Disable Function | Yes |
| UVLO Threshold | 8 V (driver supply) |
| Target Transistors | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Automotive Qualification | AEC-Q100 qualified (Q1) |
| 封装 | 16-SOIC (DW) |
| 安装类型 | Surface Mount |
UCC21550BQDWRQ1 16-soic (dw) 引脚配置指南
UCC21550BQDWRQ1（16-soic (dw) 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： UCC21550BQDWRQ1.
请参阅 数据手册 以查看完整引脚配置。
典型应用
UCC21550BQDWRQ1 适用于 6 应用s: Automotive Onboard Charger (OBC), DC-DC Converters and Auxiliary Power, Traction and Motor Drive Inverters, Solar String and Central Inverters, Industrial Motor Drives and Servo Drives, Battery Formation and Test Equipment.
Automotive Onboard Charger (OBC)
The UCC21550BQDWRQ1 fits automotive onboard chargers because its AEC-Q100 qualification, 5000Vrms reinforced isolation, and 4A/6A drive strength address the safety and efficiency demands of PFC and DC-DC stages. Its programmable dead time protects the half-bridge switches in totem-pole PFC or CLLC resonant converters from shoot-through, while the 8V UVLO ensures SiC MOSFET gates are only driven at healthy bias levels. Placed between the C2000 MCU PWM outputs and the power switches, it provides fast, CMTI-robust signal transfer across the isolation barrier; the disable pin enables rapid fault shutdown during overcurrent events.
推荐
DC-DC Converters and Auxiliary Power
In isolated automotive and industrial DC-DC converters (12V/48V auxiliary supplies, CLLC and phase-shifted full-bridge stages), the UCC21550BQDWRQ1 drives the primary-side switches with 6A peak sink current for fast turn-off and minimized switching loss. The dual channels can be configured as a half-bridge driver with internally enforced programmable dead time, simplifying the control interface from a single PWM input pair. The 5000Vrms capacitive isolation barrier separates the high-voltage primary from the low-voltage secondary, and the wide temperature range supports sealed, thermally stressed converter environments.
推荐
Traction and Motor Drive Inverters
For electric-vehicle traction inverters and industrial motor drives, the UCC21550BQDWRQ1 provides the reinforced isolation and rugged 4A/6A drive required by SiC MOSFET and IGBT three-phase bridge stages. The 8V UVLO protects SiC gates from operating in the high-resistance partial-on region during supply brownouts, and high common-mode transient immunity tolerates the large dV/dt switching edges of SiC bridges. Its programmable dead time lets designers tune dead time for efficiency versus safety, and the disable pin supports rapid shutdown from the inverter protection circuitry during overcurrent or desat faults.
推荐
Solar String and Central Inverters
In solar string inverters, the UCC21550BQDWRQ1 drives the boost and inverter bridge power switches where 5000Vrms reinforced isolation between the DC input, AC grid, and control ground is mandatory. The industrial non-Q1 UCC21550BDWR variant suits cost-optimized solar designs, while this Q1 part covers markets requiring automotive-grade components. The programmable dead time feature reduces cross-conduction losses in the half-bridge inverter stage, directly improving weighted efficiency, and the 4A/6A asymmetric drive supports both fast SiC switching and IGBT stages in the same platform.
推荐
Industrial Motor Drives and Servo Drives
Industrial AC and servo drives benefit from the UCC21550BQDWRQ1's flexible configuration: the two channels can serve as two low-side drivers for a three-phase bridge (three devices total) or as a half-bridge for a leg of the inverter. The 16-SOIC (DW) package's wide-body geometry supports board-level creepage and clearance for 400V/690V-class drive designs, and the reinforced isolation grade aligns with functional-safety isolation requirements. The disable pin interfaces with gate-drive protection (desat or overcurrent comparators), and 6A sink current handles IGBT turn-off in higher-power modules.
推荐
Battery Formation and Test Equipment
Battery formation, cycling, and test systems use isolated bidirectional DC-DC stages where the UCC21550BQDWRQ1's dual-channel isolated drive, programmable dead time, and 5000Vrms isolation serve the high-voltage power conversion front end. The automotive Q1 grading provides margin for 24/7 industrial operation, and the 4A/6A drive strength supports both MOSFET and IGBT switches commonly used in formation chargers. The disable input allows the supervisory controller to gate off the power stage instantly during cell fault detection, protecting both the battery cells and the power electronics.
推荐
推荐产品汇总
工程参考数据： UCC21550BQDWRQ1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | UCC21550BDWR | UCC21540DW | UCC21520DW | UCC21530DW |
|---|---|---|---|---|---|
| Package | 16-SOIC (DW) | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
关键差异点
- AEC-Q100 automotive qualification （对比 UCC21550BDWR)
- On-chip programmable dead time with disable pin （对比 UCC21540DW)
- 8V UVLO optimized for SiC gate drives （对比 UCC21520DW)
设计说明
The 16-SOIC (DW) wide-body package is chosen for its isolation creepage. Maintain the manufacturer-recommended creepage and clearance distances on the PCB between input-side (VCCI/GND1) and output-side (VDDA/VSSA/VDB/VSSB) copper. Avoid routing high-dV/dt switch-node traces under the package body, and consider a board slot between primary and secondary sections on compact layouts to preserve the reinforced isolation rating in end applications.
Bias each secondary channel with a low-ESR ceramic decoupling capacitor (typically 1 uF to 10 uF, per the datasheet recommendation) placed within a few millimeters of VDDA/VSSB pins to support 4A/6A peak gate currents without supply droop. For high-side channels, size the bootstrap or isolated bias supply for the total gate charge of the SiC MOSFET or IGBT plus the driver quiescent draw, and confirm the 8V UVLO threshold clears the selected switch's Miller plateau voltage.
Do not substitute the automotive Q1 part with the industrial UCC21550BDWR in automotive production without formal customer change approval. When replacing with family alternatives (UCC21540, UCC21520, UCC21530), verify pin mapping, UVLO variant, and dead-time pin functionality against the current TI datasheet - family members share the 16-SOIC footprint but differ in feature sets. Also confirm CMTI margins against your worst-case switch-node dV/dt before finalizing the layout.
合规信息
AEC-Q100 qualification is confirmed by the -Q1 suffix and TI product page description (UCC21550-Q1 automotive family). RoHS/REACH/lead-free/halogen details should be confirmed from TI's product page quality section for the exact ordering part number.