UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI
料号： UCC21550Q-Q1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $3.6 | $3.60 |
| 10 | $3.25 | $32.50 |
| 100 | $2.8 | $280.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.1 | $2,100.00 |
UCC21550Q-Q1 概述
An isolated gate driver is a power management IC that provides galvanic isolation between a low-voltage controller (such as an MCU) and the high-voltage power stage of a switching converter or motor inverter. Within the power-electronics hierarchy, it sits between the PWM controller and the power transistor, translating logic-level signals across the isolation barrier while providing the high peak currents needed to rapidly charge and discharge transistor gates.
Key features include a capacitive isolation architecture with high common-mode transient immunity for fast-switching WBG devices, programmable dead time via a single resistor for half-bridge configurations, and flexible configuration as two low-side, two high-side, or one half-bridge driver. A disable pin and interlock function prevent shoot-through. Per TI product data, the family supports both A and B grade options with different propagation delay specifications.
The driver uses TI capacitor-based isolation technology, which avoids the aging characteristics of optocouplers and sustains high dV/dt events typical of SiC and GaN switching. High CMTI and fast propagation delay enable narrow dead times, improving converter efficiency in high-frequency designs.
Typical applications include on-board chargers and traction inverters in electric vehicles, solar string inverters, industrial motor drives, server and telecom power supplies, and wireless charging power stages.
Design consideration: program the dead-time resistor per the datasheet equation and keep the gate-drive loops short; verify thermal dissipation from gate-charge losses at your switching frequency before finalizing the layout.
直接替换替代料： UCC21550Q-Q1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： UCC21550Q-Q1 （相同外形与封装尺寸） ——差异在于 Package, Isolation Rating, Automotive Qualification, UVLO, Operating Temperature.
快速对比工具——选择替代料号进行并排对比：
UCC21540QDWKRQ1
✅ 直接替换✓ 有现货
$2.21 / 个
查看数据手册 →UCC21520Q-Q1
✅ 直接替换✓ 有现货
$2.85 / 个
查看数据手册 →UCC21521Q-Q1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$1 / 个
查看数据手册 →UCC21530Q-Q1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$2.1 / 个
查看数据手册 →UCC21550Q-Q1 最大额定值与电气特性
| Product Type | Reinforced isolated dual-channel gate driver |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Number of Channels | 2 |
| Isolation Rating | 5000 Vrms (reinforced) |
| Isolation Technology | Capacitive coupling |
| Configurations | Dual low-side, dual high-side, or half-bridge |
| Programmable Dead Time | Yes (single resistor) |
| Target Transistors | Power MOSFET, SiC, GaN, IGBT |
| 工作温度 | -40C to +150C |
| 封装 | 16-SOIC (DW) |
| 安装类型 | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified (Q1) |
| Disable Function | Yes |
| RoHS 状态 | Compliant |
UCC21550Q-Q1 引脚配置
| 引脚 1 | VCCI — Input-side supply voltage |
| 引脚 2 | GND — Input-side ground |
| 引脚 3 | INH — Input A (high-side channel) |
| 引脚 4 | DT — Dead-time programming resistor pin |
| 引脚 5 | INL — Input B (low-side channel) |
| 引脚 6 | DIS — Disable input |
| 引脚 8 | VDDA — Output A supply |
| 引脚 9 | OUTA — Output A gate drive |
| 引脚 10 | VSSA — Output A return (switching node for high-side) |
| 引脚 12 | VDDB — Output B supply |
| 引脚 13 | OUTB — Output B gate drive |
| 引脚 16 | VSSB — Output B return (ground for low-side) |
典型应用
UCC21550Q-Q1 适用于 6 应用s: Automotive On-Board Chargers, Solar String Inverters, Industrial Motor Drives, Server and Telecom Power Supplies, Traction Inverters (xEV), Wireless Charging Power Stages.
Automotive On-Board Chargers
The UCC21550Q-Q1 suits automotive OBC PFC and LLC stages because its AEC-Q100 qualification and -40C to 150C range meet vehicle environmental requirements, while 4A/6A drive strength switches SiC MOSFETs quickly to reach the high frequencies (100 kHz+) needed for power-dense converters. Programmed dead time via a single resistor simplifies half-bridge timing in LLC topologies, and 5000Vrms reinforced isolation safely separates the high-voltage DC bus from the low-voltage control domain.
推荐
Solar String Inverters
In solar inverters, the UCC21550Q-Q1 drives SiC or IGBT half-bridges in the DC-DC boost and DC-AC inverter stages. The capacitive isolation barrier withstands the large dV/dt common-mode swings of a switching bridge, and the programmable dead time lets designers tune efficiency versus Shoot-through margin per operating condition. Its reinforced 5000Vrms isolation satisfies grid-tied safety isolation requirements between the PV array and grid side.
推荐
Industrial Motor Drives
For three-phase industrial motor drives, the UCC21550Q-Q1 provides high-side and low-side drive for IGBT or MOSFET power stages with reinforced isolation per phase. The 6A peak-sink current prevents Miller-induced spurious turn-on in high-voltage IGBTs, and the wide -40C to 150C operating range suits sealed drive enclosures. Interlock and disable functions protect against shoot-through during PWM fault conditions.
推荐
Server and Telecom Power Supplies
In high-density server PSU and telecom rectifier designs, the UCC21550Q-Q1 drives SiC devices in totem-pole PFC and LLC stages where switching frequencies above 100 kHz demand fast gate transitions. The high CMTI capacitive isolation rejects ground-bounce transients, while programmable dead time minimizes body-diode conduction losses, directly improving peak efficiency figures that datacenter power contracts require.
推荐
Traction Inverters (xEV)
Automotive traction inverters using SiC MOSFET modules require drivers with reinforced isolation, high CMTI, and automotive qualification - all provided by the UCC21550Q-Q1 in its 16-SOIC package. The 4A source and 6A sink currents support fast SiC switching to reduce switching losses at high phase currents, and functional-isolation system architectures can leverage multiple drivers across the three inverter legs.
推荐
Wireless Charging Power Stages
EV wireless charging transmitters use high-frequency resonant half-bridges where the UCC21550Q-Q1 drives SiC MOSFETs with precise programmed dead time to maintain resonant operation. The -40C to 150C range handles outdoor pad electronics, and reinforced isolation protects the low-voltage control electronics from the high circulating tank voltages inherent to inductive power transfer.
推荐
推荐产品汇总
工程参考数据： UCC21550Q-Q1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | UCC21540QDWKRQ1 | UCC21520Q-Q1 | UCC21521Q-Q1 | UCC21710-Q1 |
|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Peak Source Current | 4 A | 4 A class | 4 A | 2.5 A / 5 A (variant) | 10 A |
| Peak Sink Current | 6 A | 6 A class | 6 A | variant-dependent | 14 A |
| Isolation Rating | 5000 Vrms reinforced | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms |
| Automotive Grade | Yes (AEC-Q100 Q1) | Yes (Q1) | Yes (Q1) | Yes (Q1) | Yes (Q1) |
| Channels | 2 (dual) | 2 | 2 | 2 | 1 |
| Operating Temperature | -40C to 150C | -40C to 150C | -40C to 150C | -40C to 150C | -40C to 150C |
关键差异点
- Integrated programmable dead time （对比 UCC21540QDWKRQ1)
- Asymmetric 4A source / 6A sink drive （对比 UCC21521Q-Q1)
- Automotive AEC-Q100 qualification （对比 UCC21550 (standard))
设计说明
Place VDDA/VDDB decoupling capacitors (typically 100nF ceramic plus 10uF bulk per TI datasheet layout recommendations) as close as possible to each output-side supply pin. Keep gate-drive loops short and wide to minimize loop inductance, which is critical when driving SiC/GaN at high dV/dt. Route the DT resistor away from high-voltage switching nodes to avoid capacitive coupling into the dead-time setting.
In half-bridge configuration, the OUTA return (VSSA) connects to the switching node - account for the bootstrap or isolated supply needed for VDDA. Confirm the dead-time resistor value against the datasheet equation for your target dead time; incorrect resistor selection can either cause shoot-through at very low values or excessive body-diode conduction losses at high values.
Gate-driver dissipation equals Qg x fsw x (VDD drive energy) plus quiescent losses. For a SiC FET with ~60nC total gate charge switching at 100kHz from an 18V drive, per-channel gate-drive power is roughly 0.1W - manageable in the 16-SOIC, but verify junction temperature at the 150C maximum ambient rating in sealed automotive enclosures.
The capacitive isolation barrier provides high CMTI, but minimize common-mode impedance by connecting VSSA and VSSB returns with short, low-inductance traces. Consider a small RC snubber across the switching node in high-voltage SiC designs to control ringing that could couple into input-side logic.
合规信息
AEC-Q100 qualified per UCC21550-Q1 automotive family designation. RoHS status from TI/DigiKey product data; REACH and halogen-free status not stated in provided data.