2EDN7434RXTMA1 vs 2EDN7524GXTMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ 2EDN7434RXTMA1 بواسطة Infineon و 2EDN7524GXTMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ نشطمقارنة المواصفات
| المعامل | 2EDN7434RXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | — |
| Part Family | EiceDRIVER 2EDN | — |
| Driver Configuration | Dual-channel low-side | — |
| Number of Drivers | 2 | — |
| Peak Output Current | 5 A (source/sink) | — |
| Rated Output Current | 4 A | — |
| Output Resistance (Low) | [DATA_NEEDED: output resistance Ron low] | — |
| Output Resistance (High) | [DATA_NEEDED: output resistance Ron high] | — |
| Propagation Delay (Typ.) | 19 ns | — |
| Input Logic Compatibility | LV-TTL, non-inverting | — |
| Absolute Max Input Voltage | -12 V to +22 V | — |
| Supply Voltage Range | [DATA_NEEDED: VDD range] | — |
| العلبة | PG-TSSOP-8 (3.0 x 3.0 mm) | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| نوع التركيب | Surface Mount | Surface Mount |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: operating temperature] | — |
| حالة RoHS | Compliant | Compliant |
| مستوى MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Active Output Voltage Clamping | Yes | — |
| Product Type | — | Low-side gate driver IC |
| Number of Channels | — | 2 (dual) |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | — | -10 V to +20 V on logic pins |
| Supply Voltage (VCC) | — | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| زمن الصعود | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| زمن السقوط | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| درجة حرارة التشغيل | — | -40 C to +125 C |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |