2EDN7434RXTMA1 vs 2EDN7524GXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EDN7434RXTMA1 sa pamamagitan ng Infineon at 2EDN7524GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2EDN7434RXTMA1 2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2EDN7434RXTMA1 2EDN7524GXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Family EiceDRIVER 2EDN —
Driver Configuration Dual-channel low-side —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Rated Output Current 4 A —
Output Resistance (Low) [DATA_NEEDED: output resistance Ron low] —
Output Resistance (High) [DATA_NEEDED: output resistance Ron high] —
Propagation Delay (Typ.) 19 ns —
Input Logic Compatibility LV-TTL, non-inverting —
Absolute Max Input Voltage -12 V to +22 V —
Supply Voltage Range [DATA_NEEDED: VDD range] —
Packhaging PG-TSSOP-8 (3.0 x 3.0 mm) PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon [DATA_NEEDED: operating temperature] —
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Active Output Voltage Clamping Yes —
Product Type — Low-side gate driver IC
Number of Channels — 2 (dual)
Drive Current (Source/Sink) — 5 A peak
Input Logic — Non-inverting, TTL / 3.3 V CMOS-compatible
Input Voltage Tolerance — -10 V to +20 V on logic pins
Supply Voltage (VCC) — 4.5 V to 20 V [DATA_NEEDED: exact range]
Propagation Delay — 20 ns typical [DATA_NEEDED: exact figure]
Channel-to-Channel Delay Matching — 1 ns
Oras ng Pagtaas — 5 ns typical [DATA_NEEDED: exact test condition]
Time ng Pagbaba — 5 ns typical [DATA_NEEDED: exact test condition]
Output Stage — Rail-to-rail, separate source/sink
UVLO Protection — Yes
Temperature na Operasyon — -40 C to +125 C
Target Devices — Standard MOSFETs, superjunction MOSFETs, GaN HEMTs

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