BFU520WF vs BFU520A مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ BFU520WF بواسطة NXP Semiconductors و BFU520A بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | BFU520WF | BFU520A |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | Transistors | Transistors |
| حالة دورة الحياة | نشط | نشط |
| Polarity | NPN | NPN |
| Technology | Wideband silicon RF BJT, 11 GHz fT silicon technology | — |
| Collector-Emitter Breakdown Voltage (VCEO) | 12 V | — |
| Collector-Emitter Voltage (VCEO rating) | 12 V | — |
| Maximum Collector Current (IC max) | 30 mA | — |
| Total Power Dissipation (Ptot) | 450 mW | — |
| Transit Frequency (fT) | 11 GHz | — |
| Minimum Noise Figure (NFmin) | 0.6 dB at 900 MHz | — |
| Maximum Stable Gain (MSG) | 18.5 dB at 900 MHz | — |
| Application Frequency Range | Up to 2 GHz | — |
| العلبة | SOT323 (SC-70), 3-pin plastic | SOT23 (TO-236-3), 3-pin plastic |
| نوع التركيب | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| حالة RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Family | BFU5 family, small signal to medium power up to 2 GHz | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | — |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Collector-Base Capacitance (Ccb) | [DATA_NEEDED: Ccb] | — |
| نوع الترانزستور | — | NPN silicon wideband RF transistor |
| Maximum Operating Frequency | — | up to 2 GHz |
| Product Family | — | BFU5 family |
| Application Class | — | High speed, low noise; small signal to medium power |
| جهد المجمع-الباعث (Vceo) | — | [DATA_NEEDED: VCEO] |
| تيار المجمّع (Ic) | — | [DATA_NEEDED: IC max] |
| تردد الانتقال (ft) | — | [DATA_NEEDED: fT] |
| Noise Figure NF | — | [DATA_NEEDED: noise figure] |
| Gain (S21/Gp) | — | [DATA_NEEDED: gain] |
| تبديد القدرة (Ptot) | — | [DATA_NEEDED: Ptot] |