BFU520WF vs BFU520A 比較

詳細並排比較 BFU520WF 由 NXP Semiconductors 與 BFU520A 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
BFU520WF BFU520WF - NPN RF Transistor 12V 11GHz SOT323 | NXP

BFU520WF - NPN RF Transistor 12V 11GHz SOT323 | NXP

BFU520WF ✓ 啟用中
NXP Semiconductors
BFU520A BFU520A - NPN Wideband RF Transistor SOT23 | NXP

BFU520A - NPN Wideband RF Transistor SOT23 | NXP

BFU520A ✓ 啟用中

規格比較

參數 BFU520WF BFU520A
品牌 NXP Semiconductors NXP Semiconductors
類別 Transistors Transistors
生命週期狀態 啟用中 啟用中
Polarity NPN NPN
Technology Wideband silicon RF BJT, 11 GHz fT silicon technology —
Collector-Emitter Breakdown Voltage (VCEO) 12 V —
Collector-Emitter Voltage (VCEO rating) 12 V —
Maximum Collector Current (IC max) 30 mA —
Total Power Dissipation (Ptot) 450 mW —
Transit Frequency (fT) 11 GHz —
Minimum Noise Figure (NFmin) 0.6 dB at 900 MHz —
Maximum Stable Gain (MSG) 18.5 dB at 900 MHz —
Application Frequency Range Up to 2 GHz —
封裝 SOT323 (SC-70), 3-pin plastic SOT23 (TO-236-3), 3-pin plastic
安裝類型 Surface Mount Surface Mount
Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
Family BFU5 family, small signal to medium power up to 2 GHz —
DC Current Gain (hFE) [DATA_NEEDED: hFE] —
工作溫度範圍 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Collector-Base Capacitance (Ccb) [DATA_NEEDED: Ccb] —
電晶體類型 — NPN silicon wideband RF transistor
Maximum Operating Frequency — up to 2 GHz
Product Family — BFU5 family
Application Class — High speed, low noise; small signal to medium power
集極-射極電壓 (Vceo) — [DATA_NEEDED: VCEO]
集極電流 (Ic) — [DATA_NEEDED: IC max]
轉換頻率 (ft) — [DATA_NEEDED: fT]
Noise Figure NF — [DATA_NEEDED: noise figure]
Gain (S21/Gp) — [DATA_NEEDED: gain]
功率耗散 (Ptot) — [DATA_NEEDED: Ptot]

資料表與資源

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