EP1M120F484C8ES vs EP1M120F484C7ES مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ EP1M120F484C8ES بواسطة Intel و EP1M120F484C7ES بواسطة Intel. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | EP1M120F484C8ES | EP1M120F484C7ES |
|---|---|---|
| العلامة التجارية | Intel | Intel |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | Obsolete | نشط |
| Family | ACEX 1M | Mercury (EP1M) |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements / Gates | 120,000 (120K gates) | — |
| Embedded Logic Cells (EABs) | 4,800 | — |
| User I/O Pins | 303 | 303 |
| العلبة | 484-ball FineLine BGA | 484-ball FCBGA / FineLine BGA |
| Speed Grade | C8 (-8 speed bin) | C7 |
| Sample Grade | ES (Engineering Sample) | — |
| Process Technology | 0.18 µm CMOS, SRAM-based | — |
| Embedded RAM | ~104 Kbits across 12 RAM blocks | — |
| PLLs | 4 enhanced PLLs | — |
| I/O Standards | LVTTL, LVCMOS, True-LVDS, PCI | — |
| Operating Voltage (Core) | [DATA_NEEDED: core VCC range] | — |
| MultiVolt I/O Support | 1.5 V / 2.5 V / 3.3 V / 5.0 V tolerant | — |
| Configuration Method | SRAM bitstream, JTAG/serial | SRAM-based, volatile (requires config device) |
| درجة حرارة التشغيل | [DATA_NEEDED: industrial/commercial grade temp range] | — |
| حالة RoHS | [DATA_NEEDED] | Compliant |
| نوع التركيب | Surface Mount (BGA) | Surface Mount (BGA) |
| Logic Elements | — | 120,000 |
| Logic Cells / LABs | — | 49,152 logic cells / 4,800 LABs |
| Operating Temperature Grade | — | ES (engineering sample / extended screen) |
| Integrated Transceivers | — | Yes - high-speed differential with CDR |
| On-chip Memory | — | Block RAM + distributed RAM (consult Mercury datasheet for total bits) |
| DSP Blocks | — | Hardware multiplier/accumulator blocks (consult Mercury datasheet for count) |
| Lead-Free | — | Yes |
| مستوى MSL | — | [DATA_NEEDED: MSL level from manufacturer datasheet] |