FDP030N06 vs IRFZ44NPBF مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ FDP030N06 بواسطة onsemi و IRFZ44NPBF بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | FDP030N06 | IRFZ44NPBF |
|---|---|---|
| العلامة التجارية | onsemi | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | PowerTrench (Trench) | HEXFET (Advanced Process) |
| Drain to Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ 25C | 120 A (Tc) | — |
| Continuous Drain Current (datasheet rating) | 193 A (Tc, datasheet title rating) | — |
| RDS(on) Max @ Id, Vgs | 3.2 mOhm | — |
| RDS(on) Typ | 2.6 mOhm | — |
| Power Dissipation (Tc) | 231 W (Tc) | — |
| Gate Drive Type | Standard level gate drive | — |
| Switching Speed | Fast | — |
| Gate Input Resistance | Low gate input resistance (low gate charge) | — |
| Avalanche Test | 100% avalanche tested | — |
| العلبة | TO-220-3 (3+Tab) | TO-220AB (3-pin + tab) |
| نوع التركيب | Through Hole | Through Hole |
| Packing | Tube | — |
| Typical Applications | Power supply, switching applications | — |
| حالة RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 17.5 mOhm |
| Total Gate Charge (Qg) | — | 42 nC |
| Power Dissipation (PD) at Tc=25C | — | 94 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 62 C/W |
| درجة حرارة الوصلة التشغيلية | — | -55C to +175C |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS rating] |