FDP030N06 vs IRFZ44NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci FDP030N06 disebabkan oleh onsemi dan IRFZ44NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr FDP030N06 IRFZ44NPBF
Merek onsemi Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET N-Channel
Technology PowerTrench (Trench) HEXFET (Advanced Process)
Drain to Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) @ 25C 120 A (Tc) —
Continuous Drain Current (datasheet rating) 193 A (Tc, datasheet title rating) —
RDS(on) Max @ Id, Vgs 3.2 mOhm —
RDS(on) Typ 2.6 mOhm —
Power Dissipation (Tc) 231 W (Tc) —
Gate Drive Type Standard level gate drive —
Switching Speed Fast —
Gate Input Resistance Low gate input resistance (low gate charge) —
Avalanche Test 100% avalanche tested —
Kemasan TO-220-3 (3+Tab) TO-220AB (3-pin + tab)
Jenis Pemasangan Through Hole Through Hole
Packing Tube —
Typical Applications Power supply, switching applications —
Status RoHS [DATA_NEEDED: RoHS compliance status] Compliant
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 17.5 mOhm
Total Gate Charge (Qg) — 42 nC
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
Suhu Hubungan Operasi — -55C to +175C
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga