IAUC90N10S5N062ATMA1 vs IAUC60N04S6N044ATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IAUC90N10S5N062ATMA1 بواسطة Infineon و IAUC60N04S6N044ATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Infineon
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
IAUC90N10S5N062ATMA1 ✓ نشطInfineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ نشطمقارنة المواصفات
| المعامل | IAUC90N10S5N062ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 90 A | — |
| Maximum On-Resistance RDS(on) max at VGS=10V | 6.2 mOhm | — |
| Gate-Source Threshold Voltage VGS(th) typ | 3.8 V | — |
| Maximum Power Dissipation (Tc=25C) | 115 W | — |
| درجة حرارة الوصلة التشغيلية | -55 C to +175 C | -55°C to +175°C |
| العلبة | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8 (5x6 mm) with exposed pad |
| نوع التركيب | Surface Mount | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5, Generation 5) | OptiMOS-6 N-channel trench MOSFET |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| MSL (Moisture Sensitivity Level) | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified (IAUC prefix) |
| RoHS / Green Product | Yes (RoHS compliant, Green Product) | — |
| Lead-Free | Yes | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| مستوى MSL | — | 1 (unlimited) |
| حالة RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |