IAUC90N10S5N062ATMA1 vs IAUC60N04S6N044ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUC90N10S5N062ATMA1 tarafından Infineon ve IAUC60N04S6N044ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
IAUC90N10S5N062ATMA1 ✓ AktifInfineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUC90N10S5N062ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 90 A | — |
| Maximum On-Resistance RDS(on) max at VGS=10V | 6.2 mOhm | — |
| Gate-Source Threshold Voltage VGS(th) typ | 3.8 V | — |
| Maximum Power Dissipation (Tc=25C) | 115 W | — |
| İşletim Jant Sıcaklığı | -55 C to +175 C | -55°C to +175°C |
| Paket | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5, Generation 5) | OptiMOS-6 N-channel trench MOSFET |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| MSL (Moisture Sensitivity Level) | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified (IAUC prefix) |
| RoHS / Green Product | Yes (RoHS compliant, Green Product) | — |
| Lead-Free | Yes | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| MSL Seviyesi | — | 1 (unlimited) |
| RoHS Durumu | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |