IKD10N60RC2ATMA1 vs IGD08N120S7ATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IKD10N60RC2ATMA1 بواسطة Infineon و IGD08N120S7ATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IKD10N60RC2ATMA1 | IGD08N120S7ATMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | IGBTs | IGBTs |
| حالة دورة الحياة | نشط | نشط |
| Collector-Emitter Voltage (V_CE) | 600 V | — |
| Continuous Collector Current (I_C nom) | 10 A | — |
| Pulsed Collector Current (I_Cp) | 18.8 A | — |
| Maximum Power Dissipation (P_tot) | 79 W | — |
| Technology | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) | Trench Field Stop, 7th generation |
| Integrated Diode | Yes - reverse-conducting 2-diode co-packed | — |
| العلبة | PG-TO252-3 (DPAK, surface mount) | PG-TO252-3 (DPAK) |
| نوع التركيب | Surface Mount | Surface Mount |
| نطاق درجة حرارة التشغيل | -40 C to +175 C (junction) | — |
| Gate-Emitter Voltage (V_GE) | [DATA_NEEDED: recommended V_GE value] | — |
| V_CE(sat) at I_C | [DATA_NEEDED: typical V_CE(sat)] | — |
| Switching Frequency (typical) | 10 - 30 kHz (hard-switching) | — |
| Short-Circuit Withstand Time | [DATA_NEEDED: t_sc rating] | — |
| حالة RoHS | Compliant | Compliant |
| Qualification | Industrial (qualified per Infineon product validation) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| درجة حرارة الوصلة التشغيلية | — | -40C to +175C (industry grade) |
| Configuration | — | Single |