IKD10N60RC2ATMA1 vs IGD08N120S7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IKD10N60RC2ATMA1 sa pamamagitan ng Infineon at IGD08N120S7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IKD10N60RC2ATMA1 | IGD08N120S7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | IGBTs | IGBTs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Collector-Emitter Voltage (V_CE) | 600 V | — |
| Continuous Collector Current (I_C nom) | 10 A | — |
| Pulsed Collector Current (I_Cp) | 18.8 A | — |
| Maximum Power Dissipation (P_tot) | 79 W | — |
| Technology | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) | Trench Field Stop, 7th generation |
| Integrated Diode | Yes - reverse-conducting 2-diode co-packed | — |
| Packhaging | PG-TO252-3 (DPAK, surface mount) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -40 C to +175 C (junction) | — |
| Gate-Emitter Voltage (V_GE) | [DATA_NEEDED: recommended V_GE value] | — |
| V_CE(sat) at I_C | [DATA_NEEDED: typical V_CE(sat)] | — |
| Switching Frequency (typical) | 10 - 30 kHz (hard-switching) | — |
| Short-Circuit Withstand Time | [DATA_NEEDED: t_sc rating] | — |
| Tindminan RoHS | Compliant | Compliant |
| Qualification | Industrial (qualified per Infineon product validation) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| Temperature ng Junction na Operasyon | — | -40C to +175C (industry grade) |
| Configuration | — | Single |