IPP147N12N3GXKSA1 vs IPP200N15N3GXKSA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IPP147N12N3GXKSA1 بواسطة Infineon و IPP200N15N3GXKSA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IPP147N12N3GXKSA1 | IPP200N15N3GXKSA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 |
| نوع الترانزستور | N-Channel MOSFET | — |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) at Tc=25C | 56 A | — |
| Continuous Drain Current (Id) at Ta | 56 A (Ta, per DigiKey listing) | — |
| Power Dissipation (Pd) at Tc=25C | 107 W | — |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: Tj max and operating range] | — |
| العلبة | PG-TO220-3 (through-hole) | TO-220-3 (PG-TO220-3), through-hole |
| نوع التركيب | Through Hole | Through Hole |
| عدد الدبابيس | 3 (3+Tab) | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | — |
| Rds(on) max | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] | — |
| Vgs(th) (Gate Threshold) | [DATA_NEEDED: typical gate threshold voltage] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: typical Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: typical Coss] | — |
| Reverse Recovery (trr) | [DATA_NEEDED: body-diode reverse recovery time] | — |
| Avalanche Energy Rating | Single-pulse avalanche rated | — |
| حالة RoHS | Compliant (per distributor listing suffixes XKSA1) | Compliant |
| Lead-Free | Yes | Yes |
| Qualification | Automotive grade (per datasheet.live listing 'Automotive') | — |
| Packing Method | Tube | — |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID max, Tc) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on) max) | — | 20 mOhm at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg typical] |
| Total Power Dissipation (Ptot max, Tc=25C) | — | 150 W |
| Channel Type | — | N-Channel |
| نطاق درجة حرارة الوصلة التشغيلية | — | -55 C to +175 C |
| مستوى MSL | — | Not Applicable (through-hole) |