IPP147N12N3GXKSA1 vs IPP200N15N3GXKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP147N12N3GXKSA1 disebabkan oleh Infineon dan IPP200N15N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPP200N15N3GXKSA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
IPP200N15N3GXKSA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPP147N12N3GXKSA1 | IPP200N15N3GXKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 |
| Jenis Transistor | N-Channel MOSFET | — |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) at Tc=25C | 56 A | — |
| Continuous Drain Current (Id) at Ta | 56 A (Ta, per DigiKey listing) | — |
| Power Dissipation (Pd) at Tc=25C | 107 W | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: Tj max and operating range] | — |
| Kemasan | PG-TO220-3 (through-hole) | TO-220-3 (PG-TO220-3), through-hole |
| Jenis Pemasangan | Through Hole | Through Hole |
| Bilangan Pin | 3 (3+Tab) | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | — |
| Rds(on) max | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] | — |
| Vgs(th) (Gate Threshold) | [DATA_NEEDED: typical gate threshold voltage] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: typical Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: typical Coss] | — |
| Reverse Recovery (trr) | [DATA_NEEDED: body-diode reverse recovery time] | — |
| Avalanche Energy Rating | Single-pulse avalanche rated | — |
| Status RoHS | Compliant (per distributor listing suffixes XKSA1) | Compliant |
| Lead-Free | Yes | Yes |
| Qualification | Automotive grade (per datasheet.live listing 'Automotive') | — |
| Packing Method | Tube | — |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID max, Tc) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on) max) | — | 20 mOhm at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg typical] |
| Total Power Dissipation (Ptot max, Tc=25C) | — | 150 W |
| Channel Type | — | N-Channel |
| Gambaran Suhu Hubungan Operasi | — | -55 C to +175 C |
| Aras MSL | — | Not Applicable (through-hole) |