IQE013N04LM6ATMA1 vs IAUA220N08S5N021AUMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IQE013N04LM6ATMA1 بواسطة Infineon و IAUA220N08S5N021AUMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ نشطInfineon
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 ✓ نشطمقارنة المواصفات
| المعامل | IQE013N04LM6ATMA1 | IAUA220N08S5N021AUMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS-5 (75V-120V family) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 205 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | — |
| On-Resistance RDS(on) typ | 1.35 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| العلبة | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-HSOF-5-4 (7x8 mm²) |
| نطاق درجة حرارة التشغيل | -55 °C to +175 °C | -55C to +175C (Tj) |
| نوع التركيب | Surface Mount | Surface Mount |
| حالة RoHS | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | — |
| Drain-Source Voltage (V_DS max) | — | 80 V |
| Continuous Drain Current (I_D, Tj) | — | 220 A |
| Static Drain-Source On-Resistance (R_DS(on)) | — | 2.1 mΩ at 10 V V_GS |
| Power Dissipation (P_D, Tc) | — | 211 W |
| Gate-Source Voltage (V_GS max) | — | [DATA_NEEDED: V_GS max absolute rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Channel Type | — | N-Channel |
| Automotive Qualification | — | AEC-Q101 qualified |
| مستوى MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical at V_GS=10V] |
| Output Capacitance (C_oss) | — | [DATA_NEEDED: C_oss typical] |
| Thermal Resistance (R_thJC) | — | [DATA_NEEDED: junction-to-case thermal resistance] |