K9CHGY8S5C-CCK0 vs K9EUGY8S0M-BCK0 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ K9CHGY8S5C-CCK0 بواسطة Samsung Electronics و K9EUGY8S0M-BCK0 بواسطة Samsung Electro-Mechanics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ نشطSamsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ نشطمقارنة المواصفات
| المعامل | K9CHGY8S5C-CCK0 | K9EUGY8S0M-BCK0 |
|---|---|---|
| العلامة التجارية | Samsung Electronics | Samsung Electro-Mechanics |
| الفئة | Memory ICs | Memory ICs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | — |
| العلبة | BGA-316 | [DATA_NEEDED: package type and dimensions] |
| التنظيم | x8 (8-bit data access), quad CE configuration | [DATA_NEEDED: organization x8/x16] |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | [DATA_NEEDED: memory density] |
| نوع الواجهة | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| نوع التركيب | Surface Mount (BGA reflow) | Surface Mount |
| حالة RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Product Family | — | K9-series V-NAND Flash |
| نوع الذاكرة | — | NAND Flash (non-volatile) |
| Cell Type | — | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| جهد التغذية | — | [DATA_NEEDED: VCC voltage] |
| VCCQ Voltage | — | [DATA_NEEDED: VCCQ voltage] |
| Block Size | — | [DATA_NEEDED: block size] |
| Access Time (tR) | — | [DATA_NEEDED: read access time] |
| Program Time (tPROG) | — | [DATA_NEEDED: program time] |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Packing | — | [DATA_NEEDED: tray or tape and reel] |